Semiconductor oxides such as titanium dioxide (TiO2) and zinc oxide (ZnO) are used as the photocatalyst for removing contaminants. In addition, TiO2 and ZnO nanoparticles in the suspension form makes it difficult to be recovered and recycled. This study was conducted to investigate the efficiency of immobilizing TiO2 and ZnO nanoparticles in epoxy beads. The immobilization process using different ratios of photocatalysts TiO2/ZnO (1:0, 3:1, 1:1, 1:3 and 0:1) fixed on epoxy material. These epoxy beads were used for dye removal in photocatalysis using methylene blue (MB) solution at a concentration of 10mg/L. Besides, epoxy beads also characterized using scanning electron microscope (SEM), attenuated total reflection Fourier-transform infrared (ATR-FTIR) spectroscopy and thermogravimetric analysis (TGA). The results showed that the highly recommended epoxy bead is 3:1 ratio of TiO2/ZnO because it has good performance in dye degradation that proved from reducing concentration of MB to 2.4mg/L (76%). However, TiO2/ZnO characterization of 3:1 by SEM show on the surface the particle are found to be spherical in shape which is relatively high efficiency for the degradation, ATR-FTIR pattern in broad band 4000 cm-1 - 400cm-1 which correspond to hydroxyl stretching to be adsorbed at peak (474.49 cm-1 - 3722.61cm-1) respectively to the optimum for the degradation and TGA rate of change are 5mg to 2.5mg that residue (49.78%) due to decomposition or oxidation from mass loss. These findings are very effective and economical technique to be cost saving and highly efficient photocatalyst.
This journal presents an ultra-low-voltage current bleeding mixer with high LO-RF port-to-port isolation, implemented on 0.13 μm standard CMOS technology for ZigBee application. The architecture compliments a modified current bleeding topology, consisting of NMOS-based current bleeding transistor, PMOS-based switching stage, and integrated inductors achieving low-voltage operation and high LO-RF isolation. The mixer exhibits a conversion gain of 7.5 dB at the radio frequency (RF) of 2.4 GHz, an input third-order intercept point (IIP3) of 1 dBm, and a LO-RF isolation measured to 60 dB. The DC power consumption is 572 µW at supply voltage of 0.45 V, while consuming a chip area of 0.97 × 0.88 mm(2).
High-speed current controller for vector controlled permanent magnet synchronous motor (PMSM) is presented. The controller is developed based on modular design for faster calculation and uses fixed-point proportional-integral (PI) method for improved accuracy. Current dq controller is usually implemented in digital signal processor (DSP) based computer. However, DSP based solutions are reaching their physical limits, which are few microseconds. Besides, digital solutions suffer from high implementation cost. In this research, the overall controller is realizing in field programmable gate array (FPGA). FPGA implementation of the overall controlling algorithm will certainly trim down the execution time significantly to guarantee the steadiness of the motor. Agilent 16821A Logic Analyzer is employed to validate the result of the implemented design in FPGA. Experimental results indicate that the proposed current dq PI controller needs only 50 ns of execution time in 40 MHz clock, which is the lowest computational cycle for the era.
Semiconductor metal oxide (SMO) as a sensing layer for gas detection has been widely used. Many researches have been performed to enhance the sensing performance including its sensitivity, reliability and selectivity. Electrical sensors that use resistivity as an indicator of its sensing are popular and well established. However, the optical based sensor is still much to explore in detecting gas. By integrating it with SMO, the sensor offers good alternative to overcome some drawbacks from electrical sensors.
A cross-sectional study to determine work-related musculoskeletal problems and ergonomic risk factors was conducted among 529 women semiconductor workers. Overall, 83.4% had musculoskeletal symptoms in the last one year. Pain in the back (57.8%), lower leg (48.4%) and shoulder (44.8%) were the three most common musculoskeletal problems. Significant associations were found between prolonged standing and upper and lower leg pain, between prolonged sitting and neck and shoulder pain and between prolonged bending and shoulder arm, back and upper leg pain. The study therefore showed a clear association between work-related musculoskeletal pain and prolonged hours spent in particular postures and movements.
A study conducted between 1998-2001 on the semiconductor industry in Penang and Selangor found that irregular menstruation, dysmenorrhea and stress were identified as the three leading health problems by women workers from a checklist of 16 health problems. After adjusting for confounding factors, including age, working duration in current factory, and marital status, in a multiple logistic regression model, wafer polishing workers were found to experience significantly higher odds of experiencing irregular menstruation. Dysmenorrhea was found to be significantly associated with chemical usage and poor ventilation, while stress was found to be related to poor ventilation, noise and low temperatures.
This research work demonstrates compositional engineering of an organic-inorganic hybrid nano-composites for modifying absolute threshold of humidity sensors. Vanadyl-2,9,16,23-tetraphenoxy-29H,31H-phthalocyanine (VOPcPhO), an organic semiconductor, doped with Titanium-dioxide nanoparticles (TiO2NPs) has been employed to fabricate humidity sensors. The morphology of the VOPcPhO:TiO2nano-composite films has been analyzed by atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM). The sensors have been examined over a wide range of relative humidity i.e. 20-99% RH. The sensor with TiO2(90nm) shows reduced sensitivity-threshold and improved linearity. The VOPcPhO:TiO2(90nm) nano-composite film is comprised of uniformly distributed voids which makes the surface more favorable for adsorption of moisture content from environment. The VOPcPhO:TiO2nano-composite based sensor demonstrates remarkable improvement in the sensing parameter when equated with VOPcPhO sensors.
The humidity sensing characteristics of different sensing materials are important properties in order to monitor different products or events in a wide range of industrial sectors, research and development laboratories as well as daily life. The primary aim of this study is to compare the sensing characteristics, including impedance or resistance, capacitance, hysteresis, recovery and response times, and stability with respect to relative humidity, frequency, and temperature, of different materials. Various materials, including ceramics, semiconductors, and polymers, used for sensing relative humidity have been reviewed. Correlations of the different electrical characteristics of different doped sensor materials as the most unique feature of a material have been noted. The electrical properties of different sensor materials are found to change significantly with the morphological changes, doping concentration of different materials and film thickness of the substrate. Various applications and scopes are pointed out in the review article. We extensively reviewed almost all main kinds of relative humidity sensors and how their electrical characteristics vary with different doping concentrations, film thickness and basic sensing materials. Based on statistical tests, the zinc oxide-based sensing material is best for humidity sensor design since it shows extremely low hysteresis loss, minimum response and recovery times and excellent stability.
Microstructural, topology, inner morphology, and gas-sensitivity of mixed xWO(3)(1-x)Y(2)O(3) nanoparticles (x = 1, 0.95, 0.9, 0.85, 0.8) thick-film semiconductor gas sensors were studied. The surface topography and inner morphological properties of the mixed powder and sensing film were characterized with X-ray diffraction (XRD), atomic force microscopy (AFM), transmission electron microscopy (TEM), and scanning electron microscopy (SEM). Also, gas sensitivity properties of the printed films were evaluated in the presence of methane (CH(4)) and butane (C(4)H(10)) at up to 500 °C operating temperature of the sensor. The results show that the doping agent can modify some structural properties and gas sensitivity of the mixed powder.
This paper reports on the fabrication and characterization of a Complementary Metal Oxide Semiconductor-Microelectromechanical System (CMOS-MEMS) device with embedded microheater operated at relatively elevated temperatures (40 °C to 80 °C) for the purpose of relative humidity measurement. The sensing principle is based on the change in amplitude of the device due to adsorption or desorption of humidity on the active material layer of titanium dioxide (TiO2) nanoparticles deposited on the moving plate, which results in changes in the mass of the device. The sensor has been designed and fabricated through a standard 0.35 µm CMOS process technology and post-CMOS micromachining technique has been successfully implemented to release the MEMS structures. The sensor is operated in the dynamic mode using electrothermal actuation and the output signal measured using a piezoresistive (PZR) sensor connected in a Wheatstone bridge circuit. The output voltage of the humidity sensor increases from 0.585 mV to 30.580 mV as the humidity increases from 35% RH to 95% RH. The output voltage is found to be linear from 0.585 mV to 3.250 mV as the humidity increased from 35% RH to 60% RH, with sensitivity of 0.107 mV/% RH; and again linear from 3.250 mV to 30.580 mV as the humidity level increases from 60% RH to 95% RH, with higher sensitivity of 0.781 mV/% RH. On the other hand, the sensitivity of the humidity sensor increases linearly from 0.102 mV/% RH to 0.501 mV/% RH with increase in the temperature from 40 °C to 80 °C and a maximum hysteresis of 0.87% RH is found at a relative humidity of 80%. The sensitivity is also frequency dependent, increasing from 0.500 mV/% RH at 2 Hz to reach a maximum value of 1.634 mV/% RH at a frequency of 12 Hz, then decreasing to 1.110 mV/% RH at a frequency of 20 Hz. Finally, the CMOS-MEMS humidity sensor showed comparable response, recovery, and repeatability of measurements in three cycles as compared to a standard sensor that directly measures humidity in % RH.
Detection of nuclear radiation such as alpha particles has become an important field of research in recent history due to nuclear threats and accidents. In this context; deoxyribonucleic acid (DNA) acting as an organic semiconducting material could be utilized in a metal/semiconductor Schottky junction for detecting alpha particles. In this work we demonstrate for the first time the effect of alpha irradiation on an Al/DNA/p-Si/Al Schottky diode by investigating its current-voltage characteristics. The diodes were exposed for different periods (0-20 min) of irradiation. Various diode parameters such as ideality factor, barrier height, series resistance, Richardson constant and saturation current were then determined using conventional, Cheung and Cheung's and Norde methods. Generally, ideality factor or n values were observed to be greater than unity, which indicates the influence of some other current transport mechanism besides thermionic processes. Results indicated ideality factor variation between 9.97 and 9.57 for irradiation times between the ranges 0 to 20 min. Increase in the series resistance with increase in irradiation time was also observed when calculated using conventional and Cheung and Cheung's methods. These responses demonstrate that changes in the electrical characteristics of the metal-semiconductor-metal diode could be further utilized as sensing elements to detect alpha particles.
Magnetic field sensors are becoming an essential part of everyday life due to the improvements in their sensitivities and resolutions, while at the same time they have become compact, smaller in size and economical. In the work presented herein a Lorentz force based CMOS-MEMS magnetic field sensor is designed, fabricated and optically characterized. The sensor is fabricated by using CMOS thin layers and dry post micromachining is used to release the device structure and finally the sensor chip is packaged in DIP. The sensor consists of a shuttle which is designed to resonate in the lateral direction (first mode of resonance). In the presence of an external magnetic field, the Lorentz force actuates the shuttle in the lateral direction and the amplitude of resonance is measured using an optical method. The differential change in the amplitude of the resonating shuttle shows the strength of the external magnetic field. The resonance frequency of the shuttle is determined to be 8164 Hz experimentally and from the resonance curve, the quality factor and damping ratio are obtained. In an open environment, the quality factor and damping ratio are found to be 51.34 and 0.00973 respectively. The sensitivity of the sensor is determined in static mode to be 0.034 µm/mT when a current of 10 mA passes through the shuttle, while it is found to be higher at resonance with a value of 1.35 µm/mT at 8 mA current. Finally, the resolution of the sensor is found to be 370.37 µT.
For highly sensitive pH sensing, an electrolyte insulator semiconductor (EIS) device, based on ZnO nanorod-sensing membrane layers doped with magnesium, was proposed. ZnO nanorod samples prepared via a hydrothermal process with different Mg molar ratios (0-5%) were characterized to explore the impact of magnesium content on the structural and optical characteristics and sensing performance by X-ray diffraction analysis (XRD), atomic force microscopy (AFM), and photoluminescence (PL). The results indicated that the ZnO nanorods doped with 3% Mg had a high hydrogen ion sensitivity (83.77 mV/pH), linearity (96.06%), hysteresis (3 mV), and drift (0.218 mV/h) due to the improved crystalline quality and the surface hydroxyl group role of ZnO. In addition, the detection characteristics varied with the doping concentration and were suitable for developing biomedical detection applications with different detection elements.
The front-end electronics (FEE) of the Compact Muon Solenoid (CMS) is needed very low power consumption and higher readout bandwidth to match the low power requirement of its Short Strip application-specific integrated circuits (ASIC) (SSA) and to handle a large number of pileup events in the High-Luminosity Large Hadron Collider (LHC). A low-noise, wide bandwidth, and ultra-low power FEE for the pixel-strip sensor of the CMS has been designed and simulated in a 0.35 µm Complementary Metal Oxide Semiconductor (CMOS) process. The design comprises a Charge Sensitive Amplifier (CSA) and a fast Capacitor-Resistor-Resistor-Capacitor (CR-RC) pulse shaper (PS). A compact structure of the CSA circuit has been analyzed and designed for high throughput purposes. Analytical calculations were performed to achieve at least 998 MHz gain bandwidth, and then overcome pileup issue in the High-Luminosity LHC. The spice simulations prove that the circuit can achieve 88 dB dc-gain while exhibiting up to 1 GHz gain-bandwidth product (GBP). The stability of the design was guaranteed with an 82-degree phase margin while 214 ns optimal shaping time was extracted for low-power purposes. The robustness of the design against radiations was performed and the amplitude resolution of the proposed front-end was controlled at 1.87% FWHM (full width half maximum). The circuit has been designed to handle up to 280 fC input charge pulses with 2 pF maximum sensor capacitance. In good agreement with the analytical calculations, simulations outcomes were validated by post-layout simulations results, which provided a baseline gain of 546.56 mV/MeV and 920.66 mV/MeV, respectively, for the CSA and the shaping module while the ENC (Equivalent Noise Charge) of the device was controlled at 37.6 e- at 0 pF with a noise slope of 16.32 e-/pF. Moreover, the proposed circuit dissipates very low power which is only 8.72 µW from a 3.3 V supply and the compact layout occupied just 0.0205 mm2 die area.
A Delay-Locked Loop (DLL) with a modified charge pump circuit is proposed for generating high-resolution linear delay steps with sub-picosecond jitter performance and adjustable delay range. The small-signal model of the modified charge pump circuit is analyzed to bring forth the relationship between the DLL's internal control voltage and output time delay. Circuit post-layout simulation shows that a 0.97 ps delay step within a 69 ps delay range with 0.26 ps Root-Mean Square (RMS) jitter performance is achievable using a standard 0.13 µm Complementary Metal-Oxide Semiconductor (CMOS) process. The post-layout simulation results show that the power consumption of the proposed DLL architecture's circuit is 0.1 mW when the DLL is operated at 2 GHz.
A Finite Element Method (FEM) simulation study is conducted, aiming to scrutinize the sensitivity of Sezawa wave mode in a multilayer AlN/SiO₂/Si Surface Acoustic Wave (SAW) sensor to low concentrations of Volatile Organic Compounds (VOCs), that is, trichloromethane, trichloroethylene, carbon tetrachloride and tetrachloroethene. A Complimentary Metal-Oxide Semiconductor (CMOS) compatible AlN/SiO₂/Si based multilayer SAW resonator structure is taken into account for this purpose. In this study, first, the influence of AlN and SiO₂ layers’ thicknesses over phase velocities and electromechanical coupling coefficients (k²) of two SAW modes (i.e., Rayleigh and Sezawa) is analyzed and the optimal thicknesses of AlN and SiO₂ layers are opted for best propagation characteristics. Next, the study is further extended to analyze the mass loading effect on resonance frequencies of SAW modes by coating a thin Polyisobutylene (PIB) polymer film over the AlN surface. Finally, the sensitivity of the two SAW modes is examined for VOCs. This study concluded that the sensitivity of Sezawa wave mode for 1 ppm of selected volatile organic gases is twice that of the Rayleigh wave mode.
High demand of semiconductor gas sensor works at low operating temperature to as low as 100 °C has led to the fabrication of gas sensor based on TiO₂ nanoparticles. A sensing film of gas sensor was prepared by mixing the sensing material, TiO₂ (P25) and glass powder, and B₂O₃ with organic binder. The sensing film was annealed at temperature of 500 °C in 30 min. The morphological and structural properties of the sensing film were characterized by field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD). The gas sensor was exposed to hydrogen with concentration of 100⁻1000 ppm and was tested at different operating temperatures which are 100 °C, 200 °C, and 300 °C to find the optimum operating temperature for producing the highest sensitivity. The gas sensor exhibited p-type conductivity based on decreased current when exposed to hydrogen. The gas sensor showed capability in sensing low concentration of hydrogen to as low as 100 ppm at 100 °C.
Numerous instruments such as ionization chambers, hand-held and pocket dosimeters of various types, film badges, thermoluminescent dosimeters (TLDs) and optically stimulated luminescence dosimeters (OSLDs) are used to measure and monitor radiation in medical applications. Of recent, photonic devices have also been adopted. This article evaluates recent research and advancements in the applications of photonic devices in medical radiation detection primarily focusing on four types; photodiodes - including light-emitting diodes (LEDs), phototransistors-including metal oxide semiconductor field effect transistors (MOSFETs), photovoltaic sensors/solar cells, and charge coupled devices/charge metal oxide semiconductors (CCD/CMOS) cameras. A comprehensive analysis of the operating principles and recent technologies of these devices is performed. Further, critical evaluation and comparison of their benefits and limitations as dosimeters is done based on the available studies. Common factors barring photonic devices from being used as radiation detectors are also discussed; with suggestions on possible solutions to overcome these barriers. Finally, the potentials of these devices and the challenges of realizing their applications as quintessential dosimeters are highlighted for future research and improvements.
This work presents an experimental study of gold-DNA-gold structures in the presence and absence of external magnetic fields with strengths less than 1,200.00 mT. The DNA strands, extracted by standard method were used to fabricate a Metal-DNA-Metal (MDM) structure. Its electric behavior when subjected to a magnetic field was studied through its current-voltage (I-V) curve. Acquisition of the I-V curve demonstrated that DNA as a semiconductor exhibits diode behavior in the MDM structure. The current versus magnetic field strength followed a decreasing trend because of a diminished mobility in the presence of a low magnetic field. This made clear that an externally imposed magnetic field would boost resistance of the MDM structure up to 1,000.00 mT and for higher magnetic field strengths we can observe an increase in potential barrier in MDM junction. The magnetic sensitivity indicates the promise of using MDM structures as potential magnetic sensors.
Copper zinc tin sulfide (CZTS) is a promising material for harvesting solar energy due to its abundance and non-toxicity. However, its poor performance hinders their wide application. In this paper gold (Au) nanoparticles are successfully incorporated into CZTS to form Au@CZTS core-shell nanostructures. The photocathode of Au@CZTS nanostructures exhibits enhanced optical absorption characteristics and improved incident photon-to-current efficiency (IPCE) performance. It is demonstrated that using this photocathode there is a significant increase of the power conversion efficiency (PCE) of a photoelectrochemical solar cell of 100% compared to using a CZTS without Au core. More importantly, the PCE of Au@CZTS photocathode improved by 15.8% compared to standard platinum (Pt) counter electrode. The increased efficiency is attributed to plasmon resonance energy transfer (PRET) between the Au nanoparticle core and the CZTS shell at wavelengths shorter than the localized surface plasmon resonance (LSPR) peak of the Au and the semiconductor bandgap.