Displaying publications 1 - 20 of 92 in total

Abstract:
Sort:
  1. Ghazali MS, Zakaria A, Rizwan Z, Kamari HM, Hashim M, Zaid MH, et al.
    Int J Mol Sci, 2011;12(3):1496-504.
    PMID: 21673903 DOI: 10.3390/ijms12031496
    The optical band-gap energy (E(g)) is an important feature of semiconductors which determines their applications in optoelectronics. Therefore, it is necessary to investigate the electronic states of ceramic ZnO and the effect of doped impurities under different processing conditions. E(g) of the ceramic ZnO + xBi(2)O(3) + xTiO(2), where x = 0.5 mol%, was determined using a UV-Vis spectrophotometer attached to a Reflectance Spectroscopy Accessory for powdered samples. The samples was prepared using the solid-state route and sintered at temperatures from 1140 to 1260 °C for 45 and 90 minutes. E(g) was observed to decrease with an increase of sintering temperature. XRD analysis indicated hexagonal ZnO and few small peaks of intergranular layers of secondary phases. The relative density of the sintered ceramics decreased and the average grain size increased with the increase of sintering temperature.
    Matched MeSH terms: Semiconductors
  2. Hutagalung, Sabar D., Eng, Siew T., Zainal A. Ahmad, Ishak Mat, Yussof Wahab
    MyJurnal
    One-dimensional nanostructure materials are very attractive because of their electronic and optical properties depending on their size. It is well known that properties of material can be tuned by reducing size to nanoscale because at the small sizes, that they behave differently with its bulk materials and the band gap will control by the size. The tunability of the band gap makes nanostructured materials useful for many applications. As one of the wide band gaps semiconductor compounds, zinc selenide (ZnSe) nanostructures (nanoparticles, nanowires, nanorods) have received much attention for the application in optoelectronic devices, such as blue laser diode, light emitting diodes, solar cells and IR optical windows. In this study, ZnSe nanostructures have been synthesized by reduction process of zinc selenate using hydrazine hydrate (N2H4.2H2O). The reductive agent of hydrazine hydrate was added to the starting materials of zinc selenate were heat treated at 500 o C for 1 hour under argon flow to form onedimensional nanostructures. The SEM and TEM images show the formation of nanocompositelike structures, which some small nanobars and nanopellets stick to the rod. The x-ray diffraction and elemental composition analysis confirm the formation of mixture zinc oxide and zinc selenide phases.
    Matched MeSH terms: Semiconductors
  3. Bin WS, Richardson S, Yeow PH
    Int J Occup Saf Ergon, 2010;16(3):345-56.
    PMID: 20828490
    The study aimed to conduct an ergonomic intervention on a conventional line (CL) in a semiconductor factory in Malaysia, an industrially developing country (IDC), to improve workers' occupational health and safety (OHS). Low-cost and simple (LCS) ergonomics methods were used (suitable for IDCs), e.g., subjective assessment, direct observation, use of archival data and assessment of noise. It was found that workers were facing noise irritation, neck and back pains and headache in the various processes in the CL. LCS ergonomic interventions to rectify the problems included installing noise insulating covers, providing earplugs, installing elevated platforms, slanting visual display terminals and installing extra exhaust fans. The interventions cost less than 3 000 USD but they significantly improved workers' OHS, which directly correlated with an improvement in working conditions and job satisfaction. The findings are useful in solving OHS problems in electronics industries in IDCs as they share similar manufacturing processes, problems and limitations.
    Matched MeSH terms: Semiconductors*
  4. Mohd Razip Wee MF, Jaafar MM, Faiz MS, Dee CF, Yeop Majlis B
    Biosensors (Basel), 2018 Dec 05;8(4).
    PMID: 30563159 DOI: 10.3390/bios8040124
    Gallium Nitride (GaN) is considered as the second most popular semiconductor material in industry after silicon. This is due to its wide applications encompassing Light Emitting Diode (LED) and power electronics. In addition, its piezoelectric properties are fascinating to be explored as electromechanical material for the development of diverse microelectromechanical systems (MEMS) application. In this article, we conducted a theoretical study concerning surface mode propagation, especially Rayleigh and Sezawa mode in the layered GaN/sapphire structure with the presence of various guiding layers. It is demonstrated that the increase in thickness of guiding layer will decrease the phase velocities of surface mode depending on the material properties of the layer. In addition, the Q-factor value indicating the resonance properties of surface mode appeared to be affected with the presence of fluid domain, particularly in the Rayleigh mode. Meanwhile, the peak for Sezawa mode shows the highest Q factor and is not altered by the presence of fluid. Based on these theoretical results using the finite element method, it could contribute to the development of a GaN-based device to generate surface acoustic wave, especially in Sezawa mode which could be useful in acoustophoresis, lab on-chip and microfluidics applications.
    Matched MeSH terms: Semiconductors
  5. Zhang X, Wu X, Centeno A, Ryan MP, Alford NM, Riley DJ, et al.
    Sci Rep, 2016;6:23364.
    PMID: 26997140 DOI: 10.1038/srep23364
    Copper zinc tin sulfide (CZTS) is a promising material for harvesting solar energy due to its abundance and non-toxicity. However, its poor performance hinders their wide application. In this paper gold (Au) nanoparticles are successfully incorporated into CZTS to form Au@CZTS core-shell nanostructures. The photocathode of Au@CZTS nanostructures exhibits enhanced optical absorption characteristics and improved incident photon-to-current efficiency (IPCE) performance. It is demonstrated that using this photocathode there is a significant increase of the power conversion efficiency (PCE) of a photoelectrochemical solar cell of 100% compared to using a CZTS without Au core. More importantly, the PCE of Au@CZTS photocathode improved by 15.8% compared to standard platinum (Pt) counter electrode. The increased efficiency is attributed to plasmon resonance energy transfer (PRET) between the Au nanoparticle core and the CZTS shell at wavelengths shorter than the localized surface plasmon resonance (LSPR) peak of the Au and the semiconductor bandgap.
    Matched MeSH terms: Semiconductors
  6. Yung LC, Fei CC, Mandeep J, Binti Abdullah H, Wee LK
    PLoS One, 2014;9(5):e97484.
    PMID: 24830317 DOI: 10.1371/journal.pone.0097484
    The success of printing technology in the electronics industry primarily depends on the availability of metal printing ink. Various types of commercially available metal ink are widely used in different industries such as the solar cell, radio frequency identification (RFID) and light emitting diode (LED) industries, with limited usage in semiconductor packaging. The use of printed ink in semiconductor IC packaging is limited by several factors such as poor electrical performance and mechanical strength. Poor adhesion of the printed metal track to the epoxy molding compound is another critical factor that has caused a decline in interest in the application of printing technology to the semiconductor industry. In this study, two different groups of adhesion promoters, based on metal and polymer groups, were used to promote adhesion between the printed ink and the epoxy molding substrate. The experimental data show that silver ink with a metal oxide adhesion promoter adheres better than silver ink with a polymer adhesion promoter. This result can be explained by the hydroxyl bonding between the metal oxide promoter and the silane grouping agent on the epoxy substrate, which contributes a greater adhesion strength compared to the polymer adhesion promoter. Hypotheses of the physical and chemical functions of both adhesion promoters are described in detail.
    Matched MeSH terms: Semiconductors*
  7. Yusof MYPM, Rahman NLA, Asri AAA, Othman NI, Wan Mokhtar I
    Imaging Sci Dent, 2017 Dec;47(4):233-239.
    PMID: 29279822 DOI: 10.5624/isd.2017.47.4.233
    Purpose: This study was performed to quantify the repeat rate of imaging acquisitions based on different clinical examinations, and to assess the prevalence of error types in intraoral bitewing and periapical imaging using a digital complementary metal-oxide-semiconductor (CMOS) intraoral sensor.

    Materials and Methods: A total of 8,030 intraoral images were retrospectively collected from 3 groups of undergraduate clinical dental students. The type of examination, stage of the procedure, and reasons for repetition were analysed and recorded. The repeat rate was calculated as the total number of repeated images divided by the total number of examinations. The weighted Cohen's kappa for inter- and intra-observer agreement was used after calibration and prior to image analysis.

    Results: The overall repeat rate on intraoral periapical images was 34.4%. A total of 1,978 repeated periapical images were from endodontic assessment, which included working length estimation (WLE), trial gutta-percha (tGP), obturation, and removal of gutta-percha (rGP). In the endodontic imaging, the highest repeat rate was from WLE (51.9%) followed by tGP (48.5%), obturation (42.2%), and rGP (35.6%). In bitewing images, the repeat rate was 15.1% and poor angulation was identified as the most common cause of error. A substantial level of intra- and interobserver agreement was achieved.

    Conclusion: The repeat rates in this study were relatively high, especially for certain clinical procedures, warranting training in optimization techniques and radiation protection. Repeat analysis should be performed from time to time to enhance quality assurance and hence deliver high-quality health services to patients.

    Matched MeSH terms: Semiconductors
  8. Abadi MH, Hamidon MN, Shaari AH, Abdullah N, Misron N, Wagiran R
    Sensors (Basel), 2010;10(5):5074-89.
    PMID: 22399925 DOI: 10.3390/s100505074
    Microstructural, topology, inner morphology, and gas-sensitivity of mixed xWO(3)(1-x)Y(2)O(3) nanoparticles (x = 1, 0.95, 0.9, 0.85, 0.8) thick-film semiconductor gas sensors were studied. The surface topography and inner morphological properties of the mixed powder and sensing film were characterized with X-ray diffraction (XRD), atomic force microscopy (AFM), transmission electron microscopy (TEM), and scanning electron microscopy (SEM). Also, gas sensitivity properties of the printed films were evaluated in the presence of methane (CH(4)) and butane (C(4)H(10)) at up to 500 °C operating temperature of the sensor. The results show that the doping agent can modify some structural properties and gas sensitivity of the mixed powder.
    Matched MeSH terms: Semiconductors
  9. Jamalludin Z, Jong WL, Malik RA, Rosenfeld AB, Ung NM
    Phys Med, 2020 Jan;69:52-60.
    PMID: 31830631 DOI: 10.1016/j.ejmp.2019.11.025
    PURPOSE: Dose to the rectum during brachytherapy treatment may differ from an approved treatment plan which can be quantified with in vivo dosimetry (IVD). This study compares the planned with in vivo doses measured with MOSkin and PTW 9112 rectal probe in patients undergoing CT based HDR cervical brachytherapy with Co-60 source.

    METHODS: Dose measurement of a standard pear-shaped plan carried out in phantom to verify the MOSkin dose measurement accuracy. With MOSkin attached to the third diode, RP3 of the PTW 9112, both detectors were inserted into patients' rectum. The RP3 and MOSkin measured doses in 18 sessions as well as the maximum measured doses from PTW 9112, RPmax in 48 sessions were compared to the planned doses.

    RESULTS: Percentage dose differences ΔD (%) in phantom study for two MOSkin found to be 2.22 ± 0.07% and 2.5 ± 0.07%. IVD of 18 sessions resulted in ΔD(%) of -16.3% to 14.9% with MOSkin and ΔD(%) of -35.7% to -2.1% with RP3. In 48 sessions, RPmax recorded ΔD(%) of -37.1% to 11.0%. MOSkin_measured doses were higher in 44.4% (8/18) sessions, while RP3_measured were lower than planned doses in all sessions. RPmax_measured were lower in 87.5% of applications (42/47).

    CONCLUSIONS: The delivered doses proven to deviate from planned doses due to unavoidable shift between imaging and treatment as measured with MOSkin and PTW 9112 detectors. The integration of MOSkin on commercial PTW 9112 surface found to be feasible for rectal dose IVD during cervical HDR ICBT.

    Matched MeSH terms: Semiconductors
  10. Islam A, Hwa Teo S, Awual MR, Taufiq-Yap YH
    Sci Rep, 2020 Feb 11;10(1):2324.
    PMID: 32047187 DOI: 10.1038/s41598-020-59325-4
    Since the complexity of photocatalyst synthesis process and high cost of noble cocatalyst leftovers a major hurdle to producing hydrogen (H2) from water, a noble metal-free Ni-Si/MgO photocatalyst was realized for the first time to generate H2 effectively under illumination with visible light. The catalyst was produced by means of simple one-pot solid reaction using self-designed metal reactor. The physiochemical properties of photocatalyst were identified by XRD, FESEM, HRTEM, EDX, UV-visible, XPS, GC and PL. The photocatalytic activities of Ni-Si/MgO photocatalyst at different nickel concentrations were evaluated without adjusting pH, applied voltage, sacrificial agent or electron donor. The ultrathin-nanosheet with hierarchically porous structure of catalyst was found to exhibit higher photocatalytic H2 production than hexagonal nanorods structured catalyst, which suggests that the randomly branched nanosheets are more active surface to increase the light-harvesting efficiency due to its short electron diffusion path. The catalyst exhibited remarkable performance reaching up to 714 µmolh-1 which is higher among the predominant semiconductor catalyst. The results demonstrated that the photocatalytic reaction irradiated under visible light illumination through the production of hydrogen and hydroxyl radicals on metals. The outcome indicates an important step forward one-pot facile approach to prepare noble ultrathin photocatalyst for hydrogen production from water.
    Matched MeSH terms: Semiconductors
  11. Robin Chang YH, Jiang J, Khong HY, Saad I, Chai SS, Mahat MM, et al.
    ACS Appl Mater Interfaces, 2021 Jun 02;13(21):25121-25136.
    PMID: 34008948 DOI: 10.1021/acsami.1c04759
    Transition metal chalcogenides (TMCs) have gained worldwide interest owing to their outstanding renewable energy conversion capability. However, the poor mechanical flexibility of most existing TMCs limits their practical commercial applications. Herein, triggered by the recent and imperative synthesis of highly ductile α-Ag2S, an effective approach based on evolutionary algorithm and ab initio total-energy calculations for determining stable, ductile phases of bulk and two-dimensional Ag
    x
    Se1-x and Ag
    x
    Te1-x compounds was implemented. The calculations correctly reproduced the global minimum bulk stoichiometric P212121-Ag8Se4 and P21/c-Ag8Te4 structures. Recently reported metastable AgTe3 was also revealed but it lacks dynamical stability. Further single-layered screening unveiled two new monolayer P4/nmm-Ag4Se2 and C2-Ag8Te4 phases. Orthorhombic Ag8Se4 crystalline has a narrow, direct band gap of 0.26 eV that increases to 2.68 eV when transforms to tetragonal Ag4Se2 monolayer. Interestingly, metallic P21/c-Ag8Te4 changes to semiconductor when thinned down to monolayer, exhibiting a band gap of 1.60 eV. Present findings confirm their strong stability from mechanical and thermodynamic aspects, with reasonable Vickers hardness, bone-like Young's modulus (E) and high machinability observed in bulk phases. Detailed analysis of the dielectric functions ε(ω), absorption coefficient α(ω), power conversion efficiency (PCE) and refractive index n(ω) of monolayers are reported for the first time. Fine theoretical PCE (SLME method ∼11-28%), relatively high n(0) (1.59-1.93), and sizable α(ω) (104-105 cm-1) that spans the infrared to visible regions indicate their prospects in optoelectronics and photoluminescence applications. Effective strategies to improve the temperature dependent power factor (PF) and figure of merit (ZT) are illustrated, including optimizing the carrier concentration. With decreasing thickness, ZT of p-doped Ag-Se was found to rise from approximately 0.15-0.90 at 300 K, leading to a record high theoretical conversion efficiency of ∼12.0%. The results presented foreshadow their potential application in a hybrid device that combines the photovoltaic and thermoelectric technologies.
    Matched MeSH terms: Semiconductors
  12. Tin TC, Chiew KL, Phang SC, Sze SN, Tan PS
    Comput Intell Neurosci, 2019;2019:8729367.
    PMID: 30719036 DOI: 10.1155/2019/8729367
    Preventive maintenance activities require a tool to be offline for long hour in order to perform the prescribed maintenance activities. Although preventive maintenance is crucial to ensure operational reliability and efficiency of the tool, long hour of preventive maintenance activities increases the cycle time of the semiconductor fabrication foundry (Fab). Therefore, this activity is usually performed when the incoming Work-in-Progress to the equipment is forecasted to be low. The current statistical forecasting approach has low accuracy because it lacks the ability to capture the time-dependent behavior of the Work-in-Progress. In this paper, we present a forecasting model that utilizes machine learning method to forecast the incoming Work-In-Progress. Specifically, our proposed model uses LSTM to forecast multistep ahead incoming Work-in-Progress prediction to an equipment group. The proposed model's prediction results were compared with the results of the current statistical forecasting method of the Fab. The experimental results demonstrated that the proposed model performed better than the statistical forecasting method in both hit rate and Pearson's correlation coefficient, r.
    Matched MeSH terms: Semiconductors
  13. Chuan MW, Wong KL, Riyadi MA, Hamzah A, Rusli S, Alias NE, et al.
    PLoS One, 2021;16(6):e0253289.
    PMID: 34125874 DOI: 10.1371/journal.pone.0253289
    Silicene has attracted remarkable attention in the semiconductor research community due to its silicon (Si) nature. It is predicted as one of the most promising candidates for the next generation nanoelectronic devices. In this paper, an efficient non-iterative technique is employed to create the SPICE models for p-type and n-type uniformly doped silicene field-effect transistors (FETs). The current-voltage characteristics show that the proposed silicene FET models exhibit high on-to-off current ratio under ballistic transport. In order to obtain practical digital logic timing diagrams, a parasitic load capacitance, which is dependent on the interconnect length, is attached at the output terminal of the logic circuits. Furthermore, the key circuit performance metrics, including the propagation delay, average power, power-delay product and energy-delay product of the proposed silicene-based logic gates are extracted and benchmarked with published results. The effects of the interconnect length to the propagation delay and average power are also investigated. The results of this work further envisage the uniformly doped silicene as a promising candidate for future nanoelectronic applications.
    Matched MeSH terms: Semiconductors
  14. Chandrasakaran A, Chee HL, Rampal KG, Tan GLE
    Med J Malaysia, 2003 Dec;58(5):657-66.
    PMID: 15190650
    A cross-sectional study to determine work-related musculoskeletal problems and ergonomic risk factors was conducted among 529 women semiconductor workers. Overall, 83.4% had musculoskeletal symptoms in the last one year. Pain in the back (57.8%), lower leg (48.4%) and shoulder (44.8%) were the three most common musculoskeletal problems. Significant associations were found between prolonged standing and upper and lower leg pain, between prolonged sitting and neck and shoulder pain and between prolonged bending and shoulder arm, back and upper leg pain. The study therefore showed a clear association between work-related musculoskeletal pain and prolonged hours spent in particular postures and movements.
    Matched MeSH terms: Semiconductors
  15. Reshak AH, Shahimin MM, Juhari N, Suppiah S
    Prog Biophys Mol Biol, 2013 Nov;113(2):289-94.
    PMID: 24080185 DOI: 10.1016/j.pbiomolbio.2013.09.002
    The potential of organic semiconductor based devices for light generation is demonstrated by the commercialisation of display technologies using organic light emitting diode (OLED). In OLED, organic materials plays an important role of emitting light once the current is passed through. However OLED have drawbacks whereby it suffers from photon loss and exciton quenching. Organic light emitting transistor (OLET) emerged as a new technology to compensate the efficiency and brightness loss encountered in OLED. The structure has combinational capability to switch the electronic signal such as the field effect transistor (FET) as well as to generate light. Different colours of light could be generated by using different types of organic material. The light emission could also be tuned and scanned in OLET. The studies carried out in this paper focuses on investigation of fabricated MEH-PPV based OLED and also OLET via current voltage characteristics. These studies will continue with a view to develop an optimised MEH-PPV based OLET.
    Matched MeSH terms: Semiconductors*
  16. Mohd Sharizal Alias, Mohd Fauzi Maulud, Mohd Razman Yahya, Abdul Fatah Awang Mat, Suomalainen S
    Sains Malaysiana, 2008;37:233-237.
    Inclusive analysis on the optical characteristics of InGaAs/GaAs QW structure for 980 nm semiconductor laser operation is presented from experimental and theoretical point of view. The InGaAs/GaAs quantum well structure is grown by molecular beam epitaxy at different indium composition and quantum well thickness for optical characteristic comparison. Photoluminescence spectra from the measurement show that the spectrum is in good agreement with the simulation results. Detail simulation on the material gain for the InGaAs/GaAs quantum well as a function of carrier densities and operating temperature is also performed in order to optimize the semiconductor laser design for device fabrication.
    Matched MeSH terms: Semiconductors
  17. Azmer MI, Aziz F, Ahmad Z, Raza E, Najeeb MA, Fatima N, et al.
    Talanta, 2017 Nov 01;174:279-284.
    PMID: 28738579 DOI: 10.1016/j.talanta.2017.06.016
    This research work demonstrates compositional engineering of an organic-inorganic hybrid nano-composites for modifying absolute threshold of humidity sensors. Vanadyl-2,9,16,23-tetraphenoxy-29H,31H-phthalocyanine (VOPcPhO), an organic semiconductor, doped with Titanium-dioxide nanoparticles (TiO2NPs) has been employed to fabricate humidity sensors. The morphology of the VOPcPhO:TiO2nano-composite films has been analyzed by atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM). The sensors have been examined over a wide range of relative humidity i.e. 20-99% RH. The sensor with TiO2(90nm) shows reduced sensitivity-threshold and improved linearity. The VOPcPhO:TiO2(90nm) nano-composite film is comprised of uniformly distributed voids which makes the surface more favorable for adsorption of moisture content from environment. The VOPcPhO:TiO2nano-composite based sensor demonstrates remarkable improvement in the sensing parameter when equated with VOPcPhO sensors.
    Matched MeSH terms: Semiconductors
  18. Yang KL, Khoo BY, Ong MT, Yoong ICK, Sreeramanan S
    Breast Cancer, 2021 Jan;28(1):60-66.
    PMID: 32654094 DOI: 10.1007/s12282-020-01128-6
    LED red light has been reported to have many health benefits. The present study was conducted to characterise anti-proliferation properties of four LED red light wavelengths (615, 630, 660 and 730 nm) against non-triple negative (MCF-7) and triple negative (MDA-MB-231) breast cancer-origin cell lines. It has been shown by MTT assay that at 24 h post-exposure time point, only LED red light with wavelength 660 nm possessed anti-proliferative effects against both cell lines with 40% reduction of cell viability. The morphology of LED 660 nm irradiated cells was found flatten with enlarged cell size, typical characteristic of cell senescent. Indications of autophagy activities following the irradiation have been provided by acridine orange staining, showing high presence of acidic vesicle organelles (AVOs). In addition, high LC3-II/LC3-I to LC3 ratio has been observed qualitatively in Western blot analysis indicating an increase number of autophagosomes formation in LED 660 nm irradiated cells compared to control cells. Electron dense bodies observed in these cells under TEM micrographs provided additional support to the above observations, leading to the conclusion that LED 660 nm irradiation promoted anti-proliferative activities through autophagy in breast cancer-origin cells. These findings have suggested that LED 660 nm might be developed and be employed as an alternative cancer treatment method in future.
    Matched MeSH terms: Semiconductors
  19. Hashim Y, Sidek O
    J Nanosci Nanotechnol, 2013 Jan;13(1):242-9.
    PMID: 23646723
    This study is the first to demonstrate dimensional optimization of nanowire-complementary metal-oxide-semiconductor inverter. Noise margins and inflection voltage of transfer characteristics are used as limiting factors in this optimization. Results indicate that optimization depends on both dimensions ratio and digital voltage level (Vdd). Diameter optimization reveals that when Vdd increases, the optimized value of (Dp/Dn) decreases. Channel length optimization results show that when Vdd increases, the optimized value of Ln decreases and that of (Lp/Ln) increases. Dimension ratio optimization reveals that when Vdd increases, the optimized value of Kp/Kn decreases, and silicon nanowire transistor with suitable dimensions (higher Dp and Ln with lower Lp and Dn) can be fabricated.
    Matched MeSH terms: Semiconductors*
  20. Dey D, De D, Ahmadian A, Ghaemi F, Senu N
    Nanoscale Res Lett, 2021 Jan 29;16(1):20.
    PMID: 33512575 DOI: 10.1186/s11671-020-03467-x
    Doping is the key feature in semiconductor device fabrication. Many strategies have been discovered for controlling doping in the area of semiconductor physics during the past few decades. Electrical doping is a promising strategy that is used for effective tuning of the charge populations, electronic properties, and transmission properties. This doping process reduces the risk of high temperature, contamination of foreign particles. Significant experimental and theoretical efforts are demonstrated to study the characteristics of electrical doping during the past few decades. In this article, we first briefly review the historical roadmap of electrical doping. Secondly, we will discuss electrical doping at the molecular level. Thus, we will review some experimental works at the molecular level along with we review a variety of research works that are performed based on electrical doping. Then we figure out importance of electrical doping and its importance. Furthermore, we describe the methods of electrical doping. Finally, we conclude with a brief comparative study between electrical and conventional doping methods.
    Matched MeSH terms: Semiconductors
Filters
Contact Us

Please provide feedback to Administrator (afdal@afpm.org.my)

External Links