Displaying publications 1 - 20 of 92 in total

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  1. Mohd Amirul Syafiq Mohd Yunos, Zainal Abidin Talib, Wan Mahmood Mat Yunus, Liew, Josephine Ying Chyi, Paulus, Wilfred Sylvester
    MyJurnal
    Semiconductor thin films Copper Tin Selenide, Cu2SnSe3, a potential compound for solar cell applications or semiconductor radiation detector were prepared by thermal evaporation method onto well-cleaned glass substrates. The as-deposited films were annealed in flowing purified nitrogen N2, for 2 hours in a temperature range from 100˚C to 500˚C. The structure of as-deposited and annealed films has been studied by X-ray diffraction technique. The semi-quantitative analysis indicated from Reitveld refinement show that the samples composed of Cu2SnSe3 and SnSe. These studies revealed that the films were structured in mixed phase between cubic space group F-43m (no. 216) and orthorhombic space group P n m a (no. 62). The crystallite size and lattice strain were determined from Scherrer calculation method. The results show that increasing in annealing temperature resulted in direct increase in crystallite size and decrease in lattice strain.
    Matched MeSH terms: Semiconductors
  2. Parmin NA, Hashim U, Gopinath SCB, Nadzirah S, Rejali Z, Afzan A, et al.
    Mikrochim Acta, 2019 05 08;186(6):336.
    PMID: 31069542 DOI: 10.1007/s00604-019-3445-2
    A gene sensor for rapid detection of the Human Papillomavirus 16 (HPV 16) which is associated with the appearance of cervical cancer was developed. The assay is based on voltammetric determination of HPV 16 DNA by using interdigitated electrodes modified with titanium dioxide nanoparticles. Titanium dioxide nanoparticles (NPs) were used to modify a semiconductor-based interdigitated electrode (IDE). The surface of the NPs was then functionalized with a commercial 24-mer oligomer DNA probe for HPV 16 that was modified at the 5' end with a carboxyl group. If the probe interacts with the HPV 16 ssDNA, the current, best measured at a working voltage of 1.0 V, increases. The gene sensor has has a ∼ 0.1 fM limit of detection which is comparable to other sensors. The dielectric voltammetry analysis was carried out from 0 V to 1 V. The electrochemical sensitivity of the IDE is 2.5 × 10-5 μA·μM-1·cm-2. Graphical abstract Schematic of an interdigitated electrode (IDE) modified with titanium dioxide nanoparticles for voltammetric determination of HPV 16 DNA by using an appropriate DNA probe.
    Matched MeSH terms: Semiconductors
  3. Ghazali MS, Zakaria A, Rizwan Z, Kamari HM, Hashim M, Zaid MH, et al.
    Int J Mol Sci, 2011;12(3):1496-504.
    PMID: 21673903 DOI: 10.3390/ijms12031496
    The optical band-gap energy (E(g)) is an important feature of semiconductors which determines their applications in optoelectronics. Therefore, it is necessary to investigate the electronic states of ceramic ZnO and the effect of doped impurities under different processing conditions. E(g) of the ceramic ZnO + xBi(2)O(3) + xTiO(2), where x = 0.5 mol%, was determined using a UV-Vis spectrophotometer attached to a Reflectance Spectroscopy Accessory for powdered samples. The samples was prepared using the solid-state route and sintered at temperatures from 1140 to 1260 °C for 45 and 90 minutes. E(g) was observed to decrease with an increase of sintering temperature. XRD analysis indicated hexagonal ZnO and few small peaks of intergranular layers of secondary phases. The relative density of the sintered ceramics decreased and the average grain size increased with the increase of sintering temperature.
    Matched MeSH terms: Semiconductors
  4. Islam A, Hwa Teo S, Awual MR, Taufiq-Yap YH
    Sci Rep, 2020 Feb 11;10(1):2324.
    PMID: 32047187 DOI: 10.1038/s41598-020-59325-4
    Since the complexity of photocatalyst synthesis process and high cost of noble cocatalyst leftovers a major hurdle to producing hydrogen (H2) from water, a noble metal-free Ni-Si/MgO photocatalyst was realized for the first time to generate H2 effectively under illumination with visible light. The catalyst was produced by means of simple one-pot solid reaction using self-designed metal reactor. The physiochemical properties of photocatalyst were identified by XRD, FESEM, HRTEM, EDX, UV-visible, XPS, GC and PL. The photocatalytic activities of Ni-Si/MgO photocatalyst at different nickel concentrations were evaluated without adjusting pH, applied voltage, sacrificial agent or electron donor. The ultrathin-nanosheet with hierarchically porous structure of catalyst was found to exhibit higher photocatalytic H2 production than hexagonal nanorods structured catalyst, which suggests that the randomly branched nanosheets are more active surface to increase the light-harvesting efficiency due to its short electron diffusion path. The catalyst exhibited remarkable performance reaching up to 714 µmolh-1 which is higher among the predominant semiconductor catalyst. The results demonstrated that the photocatalytic reaction irradiated under visible light illumination through the production of hydrogen and hydroxyl radicals on metals. The outcome indicates an important step forward one-pot facile approach to prepare noble ultrathin photocatalyst for hydrogen production from water.
    Matched MeSH terms: Semiconductors
  5. Tan GH, Sidek RM, Ramiah H, Chong WK, Lioe de X
    ScientificWorldJournal, 2014;2014:163414.
    PMID: 25197694 DOI: 10.1155/2014/163414
    This journal presents an ultra-low-voltage current bleeding mixer with high LO-RF port-to-port isolation, implemented on 0.13 μm standard CMOS technology for ZigBee application. The architecture compliments a modified current bleeding topology, consisting of NMOS-based current bleeding transistor, PMOS-based switching stage, and integrated inductors achieving low-voltage operation and high LO-RF isolation. The mixer exhibits a conversion gain of 7.5 dB at the radio frequency (RF) of 2.4 GHz, an input third-order intercept point (IIP3) of 1 dBm, and a LO-RF isolation measured to 60 dB. The DC power consumption is 572 µW at supply voltage of 0.45 V, while consuming a chip area of 0.97 × 0.88 mm(2).
    Matched MeSH terms: Semiconductors*
  6. Huang YL, Chang WS, Van CN, Liu HJ, Tsai KA, Chen JW, et al.
    Nanoscale, 2016 Aug 25;8(34):15795-801.
    PMID: 27533610 DOI: 10.1039/c6nr04997d
    Ferroelectric photoelectrodes, other than conventional semiconductors, are alternative photo-absorbers in the process of water splitting. However, the capture of photons and efficient transfer of photo-excited carriers remain as two critical issues in ferroelectric photoelectrodes. In this work, we overcome the aforementioned issues by decorating the ferroelectric BiFeO3 (BFO) surface with Au nanocrystals, and thus improving the photoelectrochemical (PEC) performance of BFO film. We demonstrate that the internal field induced by the spontaneous polarization of BFO can (1) tune the efficiency of the photo-excited carriers' separation and charge transfer characteristics in bare BFO photoelectrodes, and (2) modulate an extra optical absorption within the visible light region, created by the surface plasmon resonance excitation of Au nanocrystals to capture more photons in the Au/BFO heterostructure. This study provides key insights for understanding the tunable features of PEC performance, composed of the heterostructure of noble metals and ferroelectric materials.
    Matched MeSH terms: Semiconductors
  7. Saw KG, Esa SR
    Sci Rep, 2021 Apr 07;11(1):7644.
    PMID: 33828210 DOI: 10.1038/s41598-021-87386-6
    Time-of-flight secondary ion mass spectrometry fragment analysis remains a challenging task. The fragment appearance regularity (FAR) rule is particularly useful for two-element compounds such as ZnO. Ion fragments appearing in the form of ZnxOy obey the rule [Formula: see text] in the positive secondary ion spectrum and [Formula: see text] in the negative spectrum where the valence of Zn is + 2 and that of O is - 2. Fragment analysis in gallium-doped ZnO (GZO) films can give insights into the bonding of the elements in this important semiconductor. Fragment analysis of 1 and 7 wt% GZO films shows that only the negative ion fragments obey the FAR rule where ZnO‒, 66ZnO‒, 68ZnO‒ and ZnO2‒ ion fragments appear. In the positive polarity, subdued peaks from out-of-the-rule ZnO+, 66ZnO+ and 68ZnO+ ion fragments are observed. The Ga ion peaks are present in both the positive and negative spectra. The secondary ion spectra of undoped ZnO also shows consistency with the FAR rule. This implies that Ga doping even in amounts that exceed the ZnO lattice limit of solubility does not affect the compliance with the FAR rule.
    Matched MeSH terms: Semiconductors
  8. Chandrasakaran A, Chee HL, Rampal KG, Tan GLE
    Med J Malaysia, 2003 Dec;58(5):657-66.
    PMID: 15190650
    A cross-sectional study to determine work-related musculoskeletal problems and ergonomic risk factors was conducted among 529 women semiconductor workers. Overall, 83.4% had musculoskeletal symptoms in the last one year. Pain in the back (57.8%), lower leg (48.4%) and shoulder (44.8%) were the three most common musculoskeletal problems. Significant associations were found between prolonged standing and upper and lower leg pain, between prolonged sitting and neck and shoulder pain and between prolonged bending and shoulder arm, back and upper leg pain. The study therefore showed a clear association between work-related musculoskeletal pain and prolonged hours spent in particular postures and movements.
    Matched MeSH terms: Semiconductors
  9. Yung LC, Fei CC, Mandeep J, Binti Abdullah H, Wee LK
    PLoS One, 2014;9(5):e97484.
    PMID: 24830317 DOI: 10.1371/journal.pone.0097484
    The success of printing technology in the electronics industry primarily depends on the availability of metal printing ink. Various types of commercially available metal ink are widely used in different industries such as the solar cell, radio frequency identification (RFID) and light emitting diode (LED) industries, with limited usage in semiconductor packaging. The use of printed ink in semiconductor IC packaging is limited by several factors such as poor electrical performance and mechanical strength. Poor adhesion of the printed metal track to the epoxy molding compound is another critical factor that has caused a decline in interest in the application of printing technology to the semiconductor industry. In this study, two different groups of adhesion promoters, based on metal and polymer groups, were used to promote adhesion between the printed ink and the epoxy molding substrate. The experimental data show that silver ink with a metal oxide adhesion promoter adheres better than silver ink with a polymer adhesion promoter. This result can be explained by the hydroxyl bonding between the metal oxide promoter and the silane grouping agent on the epoxy substrate, which contributes a greater adhesion strength compared to the polymer adhesion promoter. Hypotheses of the physical and chemical functions of both adhesion promoters are described in detail.
    Matched MeSH terms: Semiconductors*
  10. Mahmodi H, Hashim MR, Soga T, Alrokayan S, Khan HA, Rusop M
    Materials (Basel), 2018 Nov 12;11(11).
    PMID: 30424494 DOI: 10.3390/ma11112248
    In this work, nanocrystalline Ge1-xSnx alloy formation from a rapid thermal annealed Ge/Sn/Ge multilayer has been presented. The multilayer was magnetron sputtered onto the Silicon substrate. This was followed by annealing the layers by rapid thermal annealing, at temperatures of 300 °C, 350 °C, 400 °C, and 450 °C, for 10 s. Then, the effect of thermal annealing on the morphological, structural, and optical characteristics of the synthesized Ge1-xSnx alloys were investigated. The nanocrystalline Ge1-xSnx formation was revealed by high-resolution X-ray diffraction (HR-XRD) measurements, which showed the orientation of (111). Raman results showed that phonon intensities of the Ge-Ge vibrations were improved with an increase in the annealing temperature. The results evidently showed that raising the annealing temperature led to improvements in the crystalline quality of the layers. It was demonstrated that Ge-Sn solid-phase mixing had occurred at a low temperature of 400 °C, which led to the creation of a Ge1-xSnx alloy. In addition, spectral photo-responsivity of a fabricated Ge1-xSnx metal-semiconductor-metal (MSM) photodetector exhibited its extending wavelength into the near-infrared region (820 nm).
    Matched MeSH terms: Semiconductors
  11. Vinoth S, Ong WJ, Pandikumar A
    J Colloid Interface Sci, 2021 Jun;591:85-95.
    PMID: 33592528 DOI: 10.1016/j.jcis.2021.01.104
    Cobalt incorporated sulfur-doped graphitic carbon nitride with bismuth oxychloride (Co/S-gC3N4/BiOCl) heterojunction is prepared by an ultrasonically assisted hydrothermal treatment. The heterojunction materials have employed in photoelectrochemical (PEC) water splitting. The PEC activity and stability of the materials are promoted by constructing an interface between the visible light active semiconductor photocatalyst and cocatalysts. The photocurrent density of Co-9% S-gC3N4/BiOCl has attained 393.0 μA cm-2 at 1.23 V vs. RHE, which is 7-fold larger than BiOCl and ~3-fold higher than 9% S-gC3N4/BiOCl. The enhanced PEC activity can be attributed to the improved electron-hole charge separation and the boosted charge transfer is confirmed by photoluminescence (PL) and electrochemical impedance spectroscopy (EIS) analysis. The fabricated Co/S-gC3N4/BiOCl nanohybrid material has exhibited high stability of up to 10,800 s (3 h) at 1.23 V vs. RHE during PEC water splitting reaction and the obtained photo-conversion efficiency is 3.7-fold greater than S-gC3N4/BiOCl and 17-fold higher than BiOCl. The FESEM and HRTEM images have revealed the formation of heterojunction interface between S-gC3N4 and BiOCl and the elemental mapping has confirmed the presence of cobalt over S-gC3N4/BiOCl. The heterojunction interface has facilitated the photo-excited charge separation and transport across the electrode/electrolyte interface and also the flat-band potential, which is confirmed by Mott-Schottky analysis.
    Matched MeSH terms: Semiconductors
  12. Razak Mohd Ali Lee, Khairul Anwar Mohamad, Katsuyoshi, Hamasaki
    MyJurnal
    We put attention on Intrinsic Josephson Junction (IJJ) to study the fundamental physic for device applications. Convenient self-flux method was used to grow BSCCO single crystals. We investigated the lid effect to examine the single crystal growth of high TC (Critical Temperature). We found that for the crystal growth with no lid, two stage transitions of TC ≅ 61 K and 77 K were observed. While for the crystal growth with lid, the BSCCO has TC ≅ 80K, ΔTC = 10K and approximately average size5x2mm 2 . When we increased weight of lid, the single crystal have increased to TC =80K, ΔTC = 4K and the typical size was ≅7x3mm 2 . TC and the crystal growth show a tendency to increase by the effect of the lid. From observed quasi-particle characteristics, c-axis direction changed from semiconductor to intrinsic Josephson characteristic with decreasing temperature.
    Matched MeSH terms: Semiconductors
  13. Robin Chang YH, Jiang J, Khong HY, Saad I, Chai SS, Mahat MM, et al.
    ACS Appl Mater Interfaces, 2021 Jun 02;13(21):25121-25136.
    PMID: 34008948 DOI: 10.1021/acsami.1c04759
    Transition metal chalcogenides (TMCs) have gained worldwide interest owing to their outstanding renewable energy conversion capability. However, the poor mechanical flexibility of most existing TMCs limits their practical commercial applications. Herein, triggered by the recent and imperative synthesis of highly ductile α-Ag2S, an effective approach based on evolutionary algorithm and ab initio total-energy calculations for determining stable, ductile phases of bulk and two-dimensional Ag
    x
    Se1-x and Ag
    x
    Te1-x compounds was implemented. The calculations correctly reproduced the global minimum bulk stoichiometric P212121-Ag8Se4 and P21/c-Ag8Te4 structures. Recently reported metastable AgTe3 was also revealed but it lacks dynamical stability. Further single-layered screening unveiled two new monolayer P4/nmm-Ag4Se2 and C2-Ag8Te4 phases. Orthorhombic Ag8Se4 crystalline has a narrow, direct band gap of 0.26 eV that increases to 2.68 eV when transforms to tetragonal Ag4Se2 monolayer. Interestingly, metallic P21/c-Ag8Te4 changes to semiconductor when thinned down to monolayer, exhibiting a band gap of 1.60 eV. Present findings confirm their strong stability from mechanical and thermodynamic aspects, with reasonable Vickers hardness, bone-like Young's modulus (E) and high machinability observed in bulk phases. Detailed analysis of the dielectric functions ε(ω), absorption coefficient α(ω), power conversion efficiency (PCE) and refractive index n(ω) of monolayers are reported for the first time. Fine theoretical PCE (SLME method ∼11-28%), relatively high n(0) (1.59-1.93), and sizable α(ω) (104-105 cm-1) that spans the infrared to visible regions indicate their prospects in optoelectronics and photoluminescence applications. Effective strategies to improve the temperature dependent power factor (PF) and figure of merit (ZT) are illustrated, including optimizing the carrier concentration. With decreasing thickness, ZT of p-doped Ag-Se was found to rise from approximately 0.15-0.90 at 300 K, leading to a record high theoretical conversion efficiency of ∼12.0%. The results presented foreshadow their potential application in a hybrid device that combines the photovoltaic and thermoelectric technologies.
    Matched MeSH terms: Semiconductors
  14. Mandizadeh S, Soofivand F, Bagheri S, Salavati-Niasari M
    PLoS One, 2017;12(5):e0162891.
    PMID: 28493874 DOI: 10.1371/journal.pone.0162891
    In this work, SrCrxFe12-xO19 (x = 0.0, 0.5, 1.0, 1.5) nanostructures were successfully synthesized by sol-gel auto-combustion method, and different aminoacids were used as green reductants. Various analysis results show that SrCrxFe12-xO19 nanoparticles synthesized successfully.The present study shows that SrCrxFe12-xO19 nanoparticle could be used as adsorbent for the desulfurization of liquid fuels. Increasing of nanoparticles concentration was caused to increase the adsorption rate of sulfur contents of fuel. The adsorption rate of sulfur contents of fuel in various concentrations 4.5, 9.5, and 18.5 g. L -1 of SrCrxFe12-xO19 nanoparticles in solution was estimated about 39, 50, and 62% for 30 min, respectively. The results of catalytic tests reveals that SrCrxFe12-xO19 nanoparticles have the potential to be used as a new kind of semiconductor catalysts for the desulfurization of liquid fuels. Magnetic property of the final sample was measured at room temperature by a vibration sample magnetometer (VSM) and shown that the intrinsic coercivity of product is about 6000 Oe and it exhibits characteristics of single magnetic domains (Mr/ Ms = 0.53).
    Matched MeSH terms: Semiconductors
  15. Sarjidan MAM, Shuhaimi A, Majid WHA
    J Nanosci Nanotechnol, 2019 Nov 01;19(11):6995-7003.
    PMID: 31039852 DOI: 10.1166/jnn.2019.16724
    A simple spin-coating process for fabricating vertical organic light-emitting transistors (VOLETs) is realized by utilizing silver nanowire (AgNW) as a source electrode. The optical, electrical and morphological properties of the AgNW formation was initially optimized, prior VOFET fabrication. A high molecular weight of poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] MEH-PPV was used as an organic semiconductor layer in the VOFET in forming a multilayer structure by solution process. It was found that current density and luminance intensity of the VOLET can be modulated by a small magnitude of gate voltage. The modulation process was induced by changing an injection barrier via gate voltage bias. A space-charge-limited current (SCLC) approach in determining transistor mobility has been introduced. This preliminary and fundamental work is beneficial towards all-solution processing display devices.
    Matched MeSH terms: Semiconductors
  16. Chai YC, Jun HK
    J Nanosci Nanotechnol, 2019 Jun 01;19(6):3505-3510.
    PMID: 30744778 DOI: 10.1166/jnn.2019.16099
    Nanosize semiconductors have been used as active sensitizers for the application of quantum dot-sensitized solar cells (QDSSC). "Green" sensitizers are introduced as an alternative for the toxic Cd and Pb based compounds. In this work, Bi₂S₃ quantum dots (QDs) were fabricated and used as sensitizers in QDSSC. QDs were grown on TiO₂ electrode via solution dipping process. Although the performance of "green" QDSSC is not as high as that of CdS or CdSe based QDSSCs, its performance can be enhanced with post heat treatment. The effect is dependent on the heat treatment temperature profile where gradual increase of sintering temperature is preferred. The effects of post heat treatment on Bi₂S₃ sensitized TiO₂ electrodes are investigated and discussed.
    Matched MeSH terms: Semiconductors
  17. Zhang X, Wu X, Centeno A, Ryan MP, Alford NM, Riley DJ, et al.
    Sci Rep, 2016;6:23364.
    PMID: 26997140 DOI: 10.1038/srep23364
    Copper zinc tin sulfide (CZTS) is a promising material for harvesting solar energy due to its abundance and non-toxicity. However, its poor performance hinders their wide application. In this paper gold (Au) nanoparticles are successfully incorporated into CZTS to form Au@CZTS core-shell nanostructures. The photocathode of Au@CZTS nanostructures exhibits enhanced optical absorption characteristics and improved incident photon-to-current efficiency (IPCE) performance. It is demonstrated that using this photocathode there is a significant increase of the power conversion efficiency (PCE) of a photoelectrochemical solar cell of 100% compared to using a CZTS without Au core. More importantly, the PCE of Au@CZTS photocathode improved by 15.8% compared to standard platinum (Pt) counter electrode. The increased efficiency is attributed to plasmon resonance energy transfer (PRET) between the Au nanoparticle core and the CZTS shell at wavelengths shorter than the localized surface plasmon resonance (LSPR) peak of the Au and the semiconductor bandgap.
    Matched MeSH terms: Semiconductors
  18. Chuan MW, Wong KL, Riyadi MA, Hamzah A, Rusli S, Alias NE, et al.
    PLoS One, 2021;16(6):e0253289.
    PMID: 34125874 DOI: 10.1371/journal.pone.0253289
    Silicene has attracted remarkable attention in the semiconductor research community due to its silicon (Si) nature. It is predicted as one of the most promising candidates for the next generation nanoelectronic devices. In this paper, an efficient non-iterative technique is employed to create the SPICE models for p-type and n-type uniformly doped silicene field-effect transistors (FETs). The current-voltage characteristics show that the proposed silicene FET models exhibit high on-to-off current ratio under ballistic transport. In order to obtain practical digital logic timing diagrams, a parasitic load capacitance, which is dependent on the interconnect length, is attached at the output terminal of the logic circuits. Furthermore, the key circuit performance metrics, including the propagation delay, average power, power-delay product and energy-delay product of the proposed silicene-based logic gates are extracted and benchmarked with published results. The effects of the interconnect length to the propagation delay and average power are also investigated. The results of this work further envisage the uniformly doped silicene as a promising candidate for future nanoelectronic applications.
    Matched MeSH terms: Semiconductors
  19. MOHAMAD HANIF AKMAL HUSSIN, WAN RAFIZAH WAN ABDULLAH, MOHAMAD AWANG
    MyJurnal
    Semiconductor oxides such as titanium dioxide (TiO2) and zinc oxide (ZnO) are used as the photocatalyst for removing contaminants. In addition, TiO2 and ZnO nanoparticles in the suspension form makes it difficult to be recovered and recycled. This study was conducted to investigate the efficiency of immobilizing TiO2 and ZnO nanoparticles in epoxy beads. The immobilization process using different ratios of photocatalysts TiO2/ZnO (1:0, 3:1, 1:1, 1:3 and 0:1) fixed on epoxy material. These epoxy beads were used for dye removal in photocatalysis using methylene blue (MB) solution at a concentration of 10mg/L. Besides, epoxy beads also characterized using scanning electron microscope (SEM), attenuated total reflection Fourier-transform infrared (ATR-FTIR) spectroscopy and thermogravimetric analysis (TGA). The results showed that the highly recommended epoxy bead is 3:1 ratio of TiO2/ZnO because it has good performance in dye degradation that proved from reducing concentration of MB to 2.4mg/L (76%). However, TiO2/ZnO characterization of 3:1 by SEM show on the surface the particle are found to be spherical in shape which is relatively high efficiency for the degradation, ATR-FTIR pattern in broad band 4000 cm-1 - 400cm-1 which correspond to hydroxyl stretching to be adsorbed at peak (474.49 cm-1 - 3722.61cm-1) respectively to the optimum for the degradation and TGA rate of change are 5mg to 2.5mg that residue (49.78%) due to decomposition or oxidation from mass loss. These findings are very effective and economical technique to be cost saving and highly efficient photocatalyst.
    Matched MeSH terms: Semiconductors
  20. Harun, S.W., Sulaiman, A.H., Ahmad, H.
    ASM Science Journal, 2009;3(1):27-30.
    MyJurnal
    We demonstrate a multi-wavelength light source using a semiconductor optical amplifier (SOA) in conjunction with an array waveguide grating (AWG). The experimental results showed more than 20 channels with a wavelength separation of 0.8 nm and an optical signal-to-noise ratio of more than 10 dB under room temperature. The channels operated at the wavelength region from 1530.4 nm to 1548.6 nm, which corresponded to AWG filtering wavelengths with SOA drive current of 350 mA. The proposed light source had the advantages of a simple and compact structure, multi-wavelength operation and the system could be upgraded to generate more wavelengths.
    Matched MeSH terms: Semiconductors
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