Deoxyribonucleic acid or DNA molecules expressed as double-stranded (DSS) negatively charged polymer plays a significant role in electronic states of metal/silicon semiconductor structures. Electrical parameters of an Au/DNA/ITO device prepared using self-assembly method was studied by using current-voltage (I-V) characteristic measurements under alpha bombardment at room temperature. The results were analyzed using conventional thermionic emission model, Cheung and Cheung's method and Norde's technique to estimate the barrier height, ideality factor, series resistance and Richardson constant of the Au/DNA/ITO structure. Besides demonstrating a strongly rectifying (diode) characteristic, it was also observed that orderly fluctuations occur in various electrical parameters of the Schottky structure. Increasing alpha radiation effectively influences the series resistance, while the barrier height, ideality factor and interface state density parameters respond linearly. Barrier height determined from I-V measurements were calculated at 0.7284 eV for non-radiated, increasing to about 0.7883 eV in 0.036 Gy showing an increase for all doses. We also demonstrate the hypersensitivity phenomena effect by studying the relationship between the series resistance for the three methods, the ideality factor and low-dose radiation. Based on the results, sensitive alpha particle detectors can be realized using Au/DNA/ITO Schottky junction sensor.
A cross-sectional survey of semiconductor factories was conducted to identify the ergonomic risk factors in the work processes, the prevalence of body pain among workers, and the relationship between body pain and work processes. A total of 906 women semiconductor workers took part in the study. In wafer preparation and polishing, a combination of lifting weights and prolonged standing might have led to high pain prevalences in the low back (35.0% wafer preparation, 41.7% wafer polishing) and lower limbs (90.0% wafer preparation, 66.7% wafer polishing). Semiconductor front of line workers, who mostly walked around to operate machines in clean rooms, had the lowest prevalences of body pain. Semiconductor assembly middle of line workers, especially the molding workers, who did frequent lifting, had high pain prevalences in the neck/shoulders (54.8%) and upper back (43.5 %). In the semiconductor assembly end of line work section, chip inspection workers who were exposed to prolonged sitting without back support had high prevalences of neck/shoulder (62.2%) and upper back pain (50.0%), while chip testing workers who had to climb steps to load units had a high prevalence of lower limb pain (68.0%). Workers in the assembly of electronic components, carrying out repetitive tasks with hands and fingers, and standing in awkward postures had high pain prevalences in the neck/shoulders (61.5%), arms (38.5%), and hands/wrists (30.8%).
The discovery of semiconducting behavior of deoxyribonucleic acid (DNA) has resulted in a large number of literatures in the study of DNA electronics. Sequence-specific electronic response provides a platform towards understanding charge transfer mechanism and therefore the electronic properties of DNA. It is possible to utilize these characteristic properties to identify/detect DNA. In this current work, we demonstrate a novel method of DNA-based identification of basidiomycetes using current-voltage (I-V) profiles obtained from DNA-specific Schottky barrier diodes. Electronic properties such as ideality factor, barrier height, shunt resistance, series resistance, turn-on voltage, knee-voltage, breakdown voltage and breakdown current were calculated and used to quantify the identification process as compared to morphological and molecular characterization techniques. The use of these techniques is necessary in order to study biodiversity, but sometimes it can be misleading and unreliable and is not sufficiently useful for the identification of fungi genera. Many of these methods have failed when it comes to identification of closely related species of certain genus like Pleurotus. Our electronics profiles, both in the negative and positive bias regions were however found to be highly characteristic according to the base-pair sequences. We believe that this simple, low-cost and practical method could be useful towards identifying and detecting DNA in biotechnology and pathology.
The potential of organic semiconductor based devices for light generation is demonstrated by the commercialisation of display technologies using organic light emitting diode (OLED). In OLED, organic materials plays an important role of emitting light once the current is passed through. However OLED have drawbacks whereby it suffers from photon loss and exciton quenching. Organic light emitting transistor (OLET) emerged as a new technology to compensate the efficiency and brightness loss encountered in OLED. The structure has combinational capability to switch the electronic signal such as the field effect transistor (FET) as well as to generate light. Different colours of light could be generated by using different types of organic material. The light emission could also be tuned and scanned in OLET. The studies carried out in this paper focuses on investigation of fabricated MEH-PPV based OLED and also OLET via current voltage characteristics. These studies will continue with a view to develop an optimised MEH-PPV based OLET.
Wearout reliability and high temperature storage life (HTSL) activation energy of Au and Pd-coated Cu (PdCu) ball bonds are useful technical information for Cu wire deployment in nanoscale semiconductor device packaging. This paper discusses the influence of wire type on the wearout reliability performance of Au and PdCu wire used in fine pitch BGA package after HTSL stress at various aging temperatures. Failure analysis has been conducted to identify the failure mechanism after HTSL wearout conditions for Au and PdCu ball bonds. Apparent activation energies (Eaa) of both wire types are investigated after HTSL test at 150 °C, 175 °C and 200 °C aging temperatures. Arrhenius plot has been plotted for each ball bond types and the calculated Eaa of PdCu ball bond is 0.85 eV and 1.10 eV for Au ball bond in 110 nm semiconductor device. Obviously Au ball bond is identified with faster IMC formation rate with IMC Kirkendall voiding while PdCu wire exhibits equivalent wearout and or better wearout reliability margin compare to conventional Au wirebond. Lognormal plots have been established and its mean to failure (t50) have been discussed in this paper.
Recent development of trilayer graphene nanoribbon Schottky-barrier field-effect transistors (FETs) will be governed by transistor electrostatics and quantum effects that impose scaling limits like those of Si metal-oxide-semiconductor field-effect transistors. The current-voltage characteristic of a Schottky-barrier FET has been studied as a function of physical parameters such as effective mass, graphene nanoribbon length, gate insulator thickness, and electrical parameters such as Schottky barrier height and applied bias voltage. In this paper, the scaling behaviors of a Schottky-barrier FET using trilayer graphene nanoribbon are studied and analytically modeled. A novel analytical method is also presented for describing a switch in a Schottky-contact double-gate trilayer graphene nanoribbon FET. In the proposed model, different stacking arrangements of trilayer graphene nanoribbon are assumed as metal and semiconductor contacts to form a Schottky transistor. Based on this assumption, an analytical model and numerical solution of the junction current-voltage are presented in which the applied bias voltage and channel length dependence characteristics are highlighted. The model is then compared with other types of transistors. The developed model can assist in comprehending experiments involving graphene nanoribbon Schottky-barrier FETs. It is demonstrated that the proposed structure exhibits negligible short-channel effects, an improved on-current, realistic threshold voltage, and opposite subthreshold slope and meets the International Technology Roadmap for Semiconductors near-term guidelines. Finally, the results showed that there is a fast transient between on-off states. In other words, the suggested model can be used as a high-speed switch where the value of subthreshold slope is small and thus leads to less power consumption.
The front-end electronics (FEE) of the Compact Muon Solenoid (CMS) is needed very low power consumption and higher readout bandwidth to match the low power requirement of its Short Strip application-specific integrated circuits (ASIC) (SSA) and to handle a large number of pileup events in the High-Luminosity Large Hadron Collider (LHC). A low-noise, wide bandwidth, and ultra-low power FEE for the pixel-strip sensor of the CMS has been designed and simulated in a 0.35 µm Complementary Metal Oxide Semiconductor (CMOS) process. The design comprises a Charge Sensitive Amplifier (CSA) and a fast Capacitor-Resistor-Resistor-Capacitor (CR-RC) pulse shaper (PS). A compact structure of the CSA circuit has been analyzed and designed for high throughput purposes. Analytical calculations were performed to achieve at least 998 MHz gain bandwidth, and then overcome pileup issue in the High-Luminosity LHC. The spice simulations prove that the circuit can achieve 88 dB dc-gain while exhibiting up to 1 GHz gain-bandwidth product (GBP). The stability of the design was guaranteed with an 82-degree phase margin while 214 ns optimal shaping time was extracted for low-power purposes. The robustness of the design against radiations was performed and the amplitude resolution of the proposed front-end was controlled at 1.87% FWHM (full width half maximum). The circuit has been designed to handle up to 280 fC input charge pulses with 2 pF maximum sensor capacitance. In good agreement with the analytical calculations, simulations outcomes were validated by post-layout simulations results, which provided a baseline gain of 546.56 mV/MeV and 920.66 mV/MeV, respectively, for the CSA and the shaping module while the ENC (Equivalent Noise Charge) of the device was controlled at 37.6 e- at 0 pF with a noise slope of 16.32 e-/pF. Moreover, the proposed circuit dissipates very low power which is only 8.72 µW from a 3.3 V supply and the compact layout occupied just 0.0205 mm2 die area.
The existence of surface organic capping ligands on quantum dots (QDs) has limited the potential in QDs emission properties and energy band gap structure alteration as well as the carrier localization. This drawback can be addressed via depositing a thin layer of a semiconductor material on the surface of QDs. Herein, we report on the comparative study for photoluminescent (PL) properties of PbS and PbS/MnS QDs. The carrier localization effect due to the alteration of energy band gap structure and carrier recombination mechanism in the QDs were investigated via PL measurements in a temperature range of 10-300 K with the variation of the excitation power from 10 to 200 mW. For PbS QDs, the gradient of integrated PL intensity (IPL) as a function of excitation power density graph was less than unity. When the MnS shell layer was deposited onto the PbS core, the PL emission exhibited a blue shift, showing dominant carrier recombination. It was also found that the full width half-maximum showed a gradual broadening with the increasing temperature, affirming the electron-phonon interaction.
The most sensitive part of a metal-oxide-semiconductor (MOS) structure to ionizing radiation is the
oxide insulating layer. When ionizing radiation passes through the oxide, the energy deposited creates
electron/hole pairs. Oxide trapped charge causes a negative shift in capacitance-voltage (C-V)
characteristics. These changes are the results of, firstly, incre using trapped positive charge in the
oxide, which causes a parallel shift of the curve to more negative voltages, and secondly, increasing
interface trap density, which causes the curve to stretch-out.
Thin films of barium strontium titanate (Ba0.6Sr0.4TiO3) perovskite system are promising candidates for microelectronic devices that can be integrated with semiconductor technology. Ba0.6Sr0.4TiO3 thin films have been prepared onto BST/TiO2/RuO2/SiO2/Si substrate using the spin coating and sol-gel process. Then the samples were subsequently annealed at 600oC, 650oC and 700oC for 60 minutes in air. The microstructure and dielectric properties show that the crystallization improved as the annealing temperature was increased. All of the films have nanometer grain size. The average grain size of the films increased as the temperature was increased. The dielectric constant and ac conductivity of the films also increased as the average grain size increased. These results showed that the microstructure and dielectric properties depend on the annealing temperature.
This paper investigates micromachined antenna performance operating at 5 GHz for radio frequency (RF) energy harvesting applications by comparing different substrate materials and fabrication modes. The research aims to discover appropriate antenna designs that can be integrated with the rectifier circuit and fabricated in a CMOS (Complementary Metal-Oxide Semiconductor)-compatible process approach. Therefore, the investigation involves the comparison of three different micromachined antenna substrate materials, including micromachined Si surface, micromachined Si bulk with air gaps, and micromachined glass-surface antenna, as well as conventional RT/Duroid-5880 (Rogers Corp., Chandler, AZ, USA)-based antenna as the reference. The characteristics of the antennas have been analysed using CST-MWS (CST MICROWAVE STUDIO®-High Frequency EM Simulation Tool). The results show that the Si-surface micromachined antenna does not meet the parameter requirement for RF antenna specification. However, by creating an air gap on the Si substrate using a micro-electromechanical system (MEMS) process, the antenna performance could be improved. On the other hand, the glass-based antenna presents a good S11 parameter, wide bandwidth, VSWR (Voltage Standing Wave Ratio) ≤ 2, omnidirectional radiation pattern and acceptable maximum gain of >5 dB. The measurement results on the fabricated glass-based antenna show good agreement with the simulation results. The study on the alternative antenna substrates and structures is especially useful for the development of integrated patch antennas for RF energy harvesting systems.
Here we use triple-cation metal-organic halide perovskite single crystals for the transistor channel of a flash memory device. Moreover, we design and demonstrate a 10 nm thick single-layer nanofloating gate. It consists of a ternary blend of two organic semiconductors, a p-type polyfluorene and an n-type fullerene that form a donor:acceptor interpenetrating network that serves as the charge storage unit, and of an insulating polystyrene that acts as the tunneling dielectric. Under such a framework, we realize the first non-volatile flash memory transistor based on a perovskite channel. This simplified, solution-processed perovskite flash memory displays unique performance metrics such as a large memory window of 30 V, an on/off ratio of 9 × 107, short write/erase times of 50 ms, and a satisfactory retention time exceeding 106 s. The realization of the first flash memory transistor using a single-crystal perovskite channel could be a valuable direction for perovskite electronics research.
In this study, the chemical substance flow of hydrogen fluoride (hydrofluoric acid, HF) in domestic chemical industries in 2014 was analyzed in order to provide a basic material and information for the establishment of organized management system to ensure safety during HF applications. A total of 44,751 tons of HF was made by four domestic companies (in 2014); import amount was 95,984 tons in 2014 while 21,579 tons of HF was imported in 2005. The export amount of HF was 2180 tons, of which 2074 ton (China, 1422 tons, U.S. 524 tons, and Malaysia, 128 tons) was exported for the manufacturing of semiconductors. Based on the export and import amounts, it can be inferred that HF was used for manufacturing semiconductors. The industries applications of 161,123 tons of HF were as follows: manufacturing of basic inorganic chemical substance (27,937 tons), manufacturing of other chemical products such as detergents (28,208 tons), manufacturing of flat display (24,896 tons), and manufacturing of glass container package (22,002 tons). In this study, an analysis of the chemical substance flow showed that HF was mainly used in the semiconductor industry as well as glass container manufacturing. Combined with other risk management tools and approaches in the chemical industry, the chemical substance flow analysis (CSFA) can be a useful tool and method for assessment and management. The current CSFA results provide useful information for policy making in the chemical industry and national systems. Graphical abstract Hydrogen fluoride chemical substance flows in 2014 in South Korea.
This paper reports on the fabrication and characterization of a Complementary Metal Oxide Semiconductor-Microelectromechanical System (CMOS-MEMS) device with embedded microheater operated at relatively elevated temperatures (40 °C to 80 °C) for the purpose of relative humidity measurement. The sensing principle is based on the change in amplitude of the device due to adsorption or desorption of humidity on the active material layer of titanium dioxide (TiO2) nanoparticles deposited on the moving plate, which results in changes in the mass of the device. The sensor has been designed and fabricated through a standard 0.35 µm CMOS process technology and post-CMOS micromachining technique has been successfully implemented to release the MEMS structures. The sensor is operated in the dynamic mode using electrothermal actuation and the output signal measured using a piezoresistive (PZR) sensor connected in a Wheatstone bridge circuit. The output voltage of the humidity sensor increases from 0.585 mV to 30.580 mV as the humidity increases from 35% RH to 95% RH. The output voltage is found to be linear from 0.585 mV to 3.250 mV as the humidity increased from 35% RH to 60% RH, with sensitivity of 0.107 mV/% RH; and again linear from 3.250 mV to 30.580 mV as the humidity level increases from 60% RH to 95% RH, with higher sensitivity of 0.781 mV/% RH. On the other hand, the sensitivity of the humidity sensor increases linearly from 0.102 mV/% RH to 0.501 mV/% RH with increase in the temperature from 40 °C to 80 °C and a maximum hysteresis of 0.87% RH is found at a relative humidity of 80%. The sensitivity is also frequency dependent, increasing from 0.500 mV/% RH at 2 Hz to reach a maximum value of 1.634 mV/% RH at a frequency of 12 Hz, then decreasing to 1.110 mV/% RH at a frequency of 20 Hz. Finally, the CMOS-MEMS humidity sensor showed comparable response, recovery, and repeatability of measurements in three cycles as compared to a standard sensor that directly measures humidity in % RH.
Since a few centuries ago, organochlorine compounds (OCs) become one of the threatened contaminants in the world. Due to the lipophilic and hydrophobic properties, OCs always discover in fat or lipid layers through bioaccumulation and biomagnification. The OCs are able to retain in soil, sediment and water for long time as it is volatile, OCs will evaporate from soil and condense in water easily and frequently, which pollute the shelter of aquatic life and it affects the function of organs and damage system in human body. Photocatalysis that employs the usage of semiconductor nanophotocatalyst and solar energy can be the possible alternative for current conventional water remediation technologies. With the benefits of utilizing renewable energy, no production of harmful by-products and easy operation, degradation of organic pollutants in rural water bodies can be established. Besides, nanophotocatalyst that is synthesized with nanotechnology outnumbered conventional catalyst with larger surface area to volume ratio, thus higher photocatalytic activity is observed. In contrast, disadvantages particularly no residual effect in water distribution network, requirement of post-treatment and easily affected by various factors accompanied with photocatalysis method cannot be ignored. These various factors constrained the photocatalytic efficiency via nanocatalysts which causes the full capacity of solar photocatalysis has yet to be put into practice. Therefore, further modifications and research are still required in nanophotocatalysts' synthesis to overcome limitations such as large band gaps and photodecontamination.
Nitrogen-infused wet oxidation at different temperatures (400-1000 °C) was employed to transform tantalum-hafnia to hafnium-doped tantalum oxide films. High-temperature wet oxidation at 1000 °C marked an onset of crystallization occurring in the film, accompanied with the formation of an interfacial oxide due to a reaction between the inward-diffusing hydroxide ions, which were dissociated from the water molecules during wet oxidation. The existence of nitrogen has assisted in controlling the interfacial oxide formation. However, high-temperature oxidation caused a tendency for the nitrogen to desorb and form N-H complex after reacting with the hydroxide ions. Besides, the presence of N-H complex implied a decrease in the passivation at the oxide-Si interface by hydrogen. As a consequence, defect formation would happen at the interface and influence the metal-oxide-semiconductor characteristics of the samples. In comparison, tantalum-hafnia subjected to nitrogen-infused wet oxidation at 600 °C has obtained the highest dielectric constant, the largest band gap, and the lowest slow trap density.
Gallium Nitride (GaN) is considered as the second most popular semiconductor material in industry after silicon. This is due to its wide applications encompassing Light Emitting Diode (LED) and power electronics. In addition, its piezoelectric properties are fascinating to be explored as electromechanical material for the development of diverse microelectromechanical systems (MEMS) application. In this article, we conducted a theoretical study concerning surface mode propagation, especially Rayleigh and Sezawa mode in the layered GaN/sapphire structure with the presence of various guiding layers. It is demonstrated that the increase in thickness of guiding layer will decrease the phase velocities of surface mode depending on the material properties of the layer. In addition, the Q-factor value indicating the resonance properties of surface mode appeared to be affected with the presence of fluid domain, particularly in the Rayleigh mode. Meanwhile, the peak for Sezawa mode shows the highest Q factor and is not altered by the presence of fluid. Based on these theoretical results using the finite element method, it could contribute to the development of a GaN-based device to generate surface acoustic wave, especially in Sezawa mode which could be useful in acoustophoresis, lab on-chip and microfluidics applications.
Cobalt incorporated sulfur-doped graphitic carbon nitride with bismuth oxychloride (Co/S-gC3N4/BiOCl) heterojunction is prepared by an ultrasonically assisted hydrothermal treatment. The heterojunction materials have employed in photoelectrochemical (PEC) water splitting. The PEC activity and stability of the materials are promoted by constructing an interface between the visible light active semiconductor photocatalyst and cocatalysts. The photocurrent density of Co-9% S-gC3N4/BiOCl has attained 393.0 μA cm-2 at 1.23 V vs. RHE, which is 7-fold larger than BiOCl and ~3-fold higher than 9% S-gC3N4/BiOCl. The enhanced PEC activity can be attributed to the improved electron-hole charge separation and the boosted charge transfer is confirmed by photoluminescence (PL) and electrochemical impedance spectroscopy (EIS) analysis. The fabricated Co/S-gC3N4/BiOCl nanohybrid material has exhibited high stability of up to 10,800 s (3 h) at 1.23 V vs. RHE during PEC water splitting reaction and the obtained photo-conversion efficiency is 3.7-fold greater than S-gC3N4/BiOCl and 17-fold higher than BiOCl. The FESEM and HRTEM images have revealed the formation of heterojunction interface between S-gC3N4 and BiOCl and the elemental mapping has confirmed the presence of cobalt over S-gC3N4/BiOCl. The heterojunction interface has facilitated the photo-excited charge separation and transport across the electrode/electrolyte interface and also the flat-band potential, which is confirmed by Mott-Schottky analysis.
Time-of-flight secondary ion mass spectrometry fragment analysis remains a challenging task. The fragment appearance regularity (FAR) rule is particularly useful for two-element compounds such as ZnO. Ion fragments appearing in the form of ZnxOy obey the rule [Formula: see text] in the positive secondary ion spectrum and [Formula: see text] in the negative spectrum where the valence of Zn is + 2 and that of O is - 2. Fragment analysis in gallium-doped ZnO (GZO) films can give insights into the bonding of the elements in this important semiconductor. Fragment analysis of 1 and 7 wt% GZO films shows that only the negative ion fragments obey the FAR rule where ZnO‒, 66ZnO‒, 68ZnO‒ and ZnO2‒ ion fragments appear. In the positive polarity, subdued peaks from out-of-the-rule ZnO+, 66ZnO+ and 68ZnO+ ion fragments are observed. The Ga ion peaks are present in both the positive and negative spectra. The secondary ion spectra of undoped ZnO also shows consistency with the FAR rule. This implies that Ga doping even in amounts that exceed the ZnO lattice limit of solubility does not affect the compliance with the FAR rule.
The development of semiconductor heterojunctions is a promising and yet challenging strategy to boost the performance in photoelectrochemical (PEC) water splitting. This paper describes the fabrication of a heterojunction photoanode by coupling α-Fe2O3 and g-C3N4via aerosol-assisted chemical vapour deposition (AACVD) followed by spin coating and air annealing. Enhanced PEC performance and stability are observed for the α-Fe2O3/g-C3N4 heterojunction photoanode in comparison to pristine α-Fe2O3 and the reason is systematically discussed in this paper. Most importantly, the fabricated α-Fe2O3/g-C3N4 film shows impressive stability, retaining more than 90% of the initial current over 12 h operating time. The excellent stability of the heterojunction photoanode is achieved due to the unique nanoflake structure of α-Fe2O3 induced by AACVD. This nanostructure promotes good adhesion with the g-C3N4 particles, as the particles tend to be trapped within the α-Fe2O3 valleys and eventually create strong and large interfacial contacts. This leads to improved separation of charge carriers at the α-Fe2O3/g-C3N4 interface and suppression of charge recombination in the photoanode, which are confirmed by the transient decay time, charge transfer efficiency and electrochemical impedance analysis. Our findings demonstrate the importance of nanostructure engineering for developing heterojunction structures with efficient charge transfer dynamics.