Gallium oxide (Ga2O3) is a promising wide-band-gap semiconductor material for UV optical detectors and high-power transistor applications. The fabrication of p-type Ga2O3 is a key problem that hinders its potential for realistic power applications. In this paper, pure α-Ga2O3 and Ca-doped α-Ga2O3 band structure, the density of states, charge density distribution, and optical properties were determined by a first-principles generalized gradient approximation plane-wave pseudopotential method based on density functional theory. It was found that calcium (Ca) doping decreases the bandgap by introducing deep acceptor energy levels as the intermediate band above the valence band maximum. This intermediate valence band mainly consists of Ca 3p and O 2p orbitals and is adequately high in energy to provide an opportunity for p-type conductivity. Moreover, Ca doping enhances the absorptivity and reflectivity become low in the visible region. Aside, transparency decreases compared to the pure material. The optical properties were studied and clarified by electrons-photons interband transitions along with the complex dielectric function's imaginary function.
A new approach to controlling the flow of a plasmatic electron packet at the interface between metallic and dielectric layers is described. The proposed metamaterial structure operates in the optical frequency range and can be used as a digital processing filter. It exhibits two double negative resonances and one special passband region, while the existence of a metal-dielectric nano-tunnel enhances electromagnetic wave-metal interactions. The structural arrangement of this metamaterial coupled with the tunnel layer can effectively control the electric field and allows digital encoding of electron packets.
Novel decoration of high aspect ratio zinc oxide nanowires (ZnO NWs) with noble metals such as Ag and Au nanoparticles (NPs) was demonstrated in this work. A facile method of chemical deposition with good controllability, as well as good homogeneity would be a huge advantage towards large scale fabrication. The highlight of this work is the feasibility of multiple component decoration such as a hybrid (co-exist) Ag-Au NPs decorated ZnO NWs formation that could be beneficial towards the development of nanoarchitectured materials with the most desired properties. The local surface plasmon effect (LSPR) of Ag and Au NPs were confirmed using extinction spectra and significant photoelectrochemical conversion efficiency (PCE) enhancement of dye-sensitized solar cells (DSSCs) was achieved. The Ag-NPs and hybrid Ag-Au NPs decorated ZnO NWs marked an impressive 125 and 240% efficiency improvement against pure ZnO NWs. The improved dye light extinction resulted from the LSPR effect that had enabled greater electron generation leading to improved PCE. As the complex design of oxides' nanoarchitectures have reached a point of saturation, this novel method would enable further enhancement in their photoelectrochemical properties through decoration with noble metals via a simple chemical deposition route.
In this studies gamma and electron beam irradiation was used to treat textile waste water. Comparisons between both types of irradiation in terms of effectiveness to degrade the pollutants present in textile waste water were done. Prior to irradiation, the raw wastewater was diluted using distilled water to a target concentration of COD 400 mg/l. The sample was irradiated at selected doses between the ranges of 10 kGy to 100 kGy. The results showed that irradiation has significantly contributed in the reduction of the highly colored refractory organic pollutants. The COD removal at the lowest dose, 10 kGy was reduced to 390 mg/l for gamma and 400 mg/l for electron beam. Meanwhile, at the highest dose, 100 kGy, the COD was reduced to 125 mg/l for gamma and 144 mg/l for electron beam. The degree of removal is influenced by the dose introduced during the treatment process. As the dose increased, the higher the removal of organic pollutant was recorded. However, gamma irradiation is more effective although the differences are not significant between gamma and electron beam irradiation. On the other hand, other properties of the wastewater such as pH, turbidity, suspended solid, BOD and color also shows a gradual decrease as the dose increases for both types of irradiation.
This review briefly describes some of the techniques available for analysing surfaces and illustrates their usefulness with a few examples such as a metal and alloy. In particular, Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) and laser Raman spectroscopy are all described as advanced surface analytical techniques. In analysing a surface, AES and XPS would normally be considered first, with AES being applied where high spatial resolution is required and XPS where chemical state information is needed. Laser Raman spectroscopy is useful for determining molecular bonding. A combination of XPS, AES and Laser Raman spectroscopy can give quantitative analysis from the top few atomic layers with a lateral spatial resolution of
A conventional Michelson interferometer is modified and used to form the various types of interferometers. The basic system consists of a conventional Michelson interferometer with silicon-graphene-gold embedded between layers on the ports. When light from the monochromatic source is input into the system via the input port (silicon waveguide), the change in optical path difference (OPD) of light traveling in the stacked layers introduces the change in the optical phase, which affects to the electron mean free path within the gold layer, induces the change in the overall electron mobility can be seen by the interferometer output visibility. Further plasmonic waves are introduced on the graphene thin film and the electron mobility occurred within the gold layer, in which the light-electron energy conversion in terms of the electron mobility can be observed, the gold layer length is 100 nm. The measurement resolution in terms of the OPD of ∼ 50 nm is achieved. In applications, the outputs of the drop port device of the modified Michelson interferometer can be arranged by the different detectors, where the polarized light outputs, the photon outputs, the electron spin outputs can be obtained by the interference fringe visibility, mobility visibility and the spin up-down splitting output energies. The modified Michelson interferometer theory and the detection schemes are given in details.
This work reports the outcome of thermal grafting of 2-ethynylaniline, 3-ethynylaniline, and 4-ethynylaniline on a hydrogenated Si(100) surface. Using high-resolution XPS and AFM, it was found that the grafting of these compounds could be attributed to resonating structures that arise from the position of an electron-donating NH2 group and an electron-withdrawing acetylene group. For the ortho- and para-positioned acetylene group, surface reactions were observed to proceed predominantly via the acetylene to form a Si-C bond, whereas the meta-positioned acetylene group was found to have undergone nucleophilic grafting through the NH2 group onto the silicon surface to form a Si-N bond. Furthermore, a tert-butoxycarbonyl-protected derivative for a meta-positioned ethynylaniline was synthesized to exclusively force the reaction to react with the acetylene group and subsequent analysis confirmed that unprotected 3-ethynylaniline had indeed reacted through the nucleophilic NH2 group as hypothesized. Thus, for the first time, the interplay between resonance structures and their effects on silicon surface modifications were systematically catalogued.
This study evaluates the ImageJ software as dosimetric tools for analyzing the film dosimeter in high energy photons and electrons. The percentage depth dose of photons of 6 and 10 MV and electrons of 6 and 9 MeV were measured using the Gafchromic EBT2 film dosimeter. The films were scanned and analyzed using the Verisoft software and ImageJ. The beam profiles at nominal photon and electron beam parameters were also evaluated using the two methods. The PDD measured in ImageJ at high energy photons were in good agreement within 1% percentage of discrepancy at all depths in comparison to the Verisoft software. The PDD measured in ImageJ at high energy electrons also showed good agreement to Verisoft software within 8% percentage of discrepancy at all depths. The measured flatness of beam profiles at Dmax, R50, R80 and R90 in ImageJ were also in good agreement to Verisoft software with flatness value between 4 and 8%. The results indicated the suitability of ImageJ software as dosimetric tool for analyzing EBT2 film dosimeter at high energy photon and electrons.
This work demonstrates the high performance graphene oxide (GO)/PEDOT:PSS doubled decked hole transport layer (HTL) in the PCDTBT:PC71BM based bulk heterojunction organic photovoltaic device. The devices were tested on merits of their power conversion efficiency (PCE), reproducibility, stability and further compared with the devices with individual GO or PEDOT:PSS HTLs. Solar cells employing GO/PEDOT:PSS HTL yielded a PCE of 4.28% as compared to either of individual GO or PEDOT:PSS HTLs where they demonstrated PCEs of 2.77 and 3.57%, respectively. In case of single GO HTL, an inhomogeneous coating of ITO caused the poor performance whereas PEDOT:PSS is known to be hygroscopic and acidic which upon direct contact with ITO reduced the device performance. The improvement in the photovoltaic performance is mainly ascribed to the increased charge carriers mobility, short circuit current, open circuit voltage, fill factor, and decreased series resistance. The well matched work function of GO and PEDOT:PSS is likely to facilitate the charge transportation and an overall reduction in the series resistance. Moreover, GO could effectively block the electrons due to its large band-gap of ~3.6 eV, leading to an increased shunt resistance. In addition, we also observed the improvement in the reproducibility and stability.
This Letter presents the observation of the rare Z boson decay Z→ψℓ^{+}ℓ^{-}. Here, ψ represents contributions from direct J/ψ and ψ(2S)→J/ψX, ℓ^{+}ℓ^{-} is a pair of electrons or muons, and the J/ψ meson is detected via its decay to μ^{+}μ^{-}. The sample of proton-proton collision data, collected by the CMS experiment at the LHC at a center-of-mass energy of 13 TeV, corresponds to an integrated luminosity of 35.9 fb^{-1}. The signal is observed with a significance in excess of 5 standard deviations. After subtraction of the ψ(2S)→J/ψX contribution, the ratio of the branching fraction of the exclusive decay Z→J/ψℓ^{+}ℓ^{-} to the decay Z→μ^{+}μ^{-}μ^{+}μ^{-} within a fiducial phase space is measured to be B(Z→J/ψℓ^{+}ℓ^{-})/B(Z→μ^{+}μ^{-}μ^{+}μ^{-})=0.67±0.18(stat)±0.05(syst).
Precipitated calcium carbonate fillers were loaded into the lumen of bleached mixed tropical hardwood pulp using polyethylenimine (PEI) and alum. Our results indicated that the addition of (PEI) increased the degree of loading of precipitated calcium carbonate (PCC) into the lumen of fibers. The degree of loading also increased with the addition of alum together with PEI. The mechanical strengths of the produced lumen loaded paper increased with the addition of PEI and alum. Meanwhile the mechanical strength without alum had slightly increased the mechanical strengths of the paper. Electron micrographs revealed that the PCC fillers were successfully loaded into the lumen of the fibers.
In this work, the emission efficiency of InxGa1-xN based light emitting diodes (LEDs) had been numerically investigated with the variation of the number of quantum well. From our calculation, we found that non-uniformity of carriers distribution (especially electron) in the wells leads to serious inhomogeneity of radiative recombination distribution that would degrade the efficiency of the LED with more wells. However, the problem was minimized when the selected quantum barriers were doped with a reasonable doping level. Comparison with other reported experimental works were also included. At the end of this work, we proposed several types of preferable LEDs designs with optimum structural parameters.
Cu-doped ZnO nanorods were synthesized by sol-gel method using zinc nitrate tetrahydrate, methenamine and cupric acetate monohydrate as precursors. The as-synthesized ZnO nanorods have a twin-rod structure. The polar (002) surface of ZnO nanorods, which could be either negatively charge (O-terminated) or positively charged (Zn- terminated), was responsible for the formation of twin-rod structure. The results showed that the size, aspect ratio, crystallinity and c-lattice parameter of Cu doped ZnO nanorods decreased with increasing of Cu dopant concentration. In fact, the presence of Cu retarded the growth of ZnO nanorods in its preferred growth direction, i.e. (0001). The XPS analysis indicates that Cu ions were oxidized (Cu2+) and substituted into the ZnO lattice at the Zn2+ site. The presence of Cu reduced the optical bandgap of ZnO from 3.34 eV (undoped ZnO nanorods) to 3.31 eV (20 mol% Cu doped ZnO). Besides, it induced a visible PL emission at 2.97 eV, which could be related to the transition of electrons from conduction band (Ec) to Cu acceptor energy level (Ev + 0.45 eV) radiatively.
We have designed new derivatives of naphtha [2 ,1-b:6 ,5-13V difuran as DPNDF-CN1 and DPNDF-CN2. The molecular structures of DPNDF, its derivatives DPNDF-CN1 and DPNDF-CN2 have been optimized at the ground (So) and first excited (S1) states using density functional theory (DFT) and time-dependent density functional theory (TD-DFT), respectively. Then the highest occupied molecular orbitals (HOMOs), the lowest unoccupied molecular orbitals (Lumos), photoluminescence properties, electron affinities (EELS), reorganization energies (.1.$) and ionization potentials (iPs) have been investigated. The balanced A(h) and A(e) showed that DPNDF, DPNDF-CN1 and DPNDF-CN2 would be better charge transport materials for both hole and electron. The effect of attached acceptors on the geometrical parameters, electronic, optical and charge transfer properties have also been investigated.
IAEA in its publication year 2000 has recommended a worksheet for the determination of absorbed dose to water in an electron beam. We evaluated the worksheet via an absorbed dose to water determination work at a local radiotherapy center using a 12 MeV electron beam. We found that if several modifications are made, this IAEA worksheet will become more user-friendly and could facilitate and fasten the process of quality assurance audit. The modifications are given and discussed.
[IAEA dalam penerbitannya tahun 2000 telah mengesyorkan satu helaian kerja untuk menentukan dos terserap kepada air dalam alur electron. Helaian kerja ini dinilai melalui satu kerja penentuan dos terserap kepada air di satu Pusat radioterapi tempatan menggunakan satu alur electron 12 MeV. Sekiranya beberapa pengubahsuai dibuat, helaian kerja IAEA ini akan menjadi lebih mesra pengguna dan dapat mempermudahkan dan mempercepatkan lagi proses audit jaminan kualiti. Pengubahsuaian ini diberikan dan dibincangkan].
Quantum dots being an interesting class of nanostructures are considered potential prototype systems for novel nano-devices such as single electron transistor (sET). Here in this research, we present an analysis of the electron trajectory in the vicinity of gallium arsenide (GaAs) quantum dot. To perform this study, DFT based methodology is employed to optimize structure of quantum dot and determining the electrostatic potential around the dot. Under the influence of obtained electrostatic potential, trajectory of the moving electron towards the dot is investigated. The results showed that GaAs quantum dot have negative and positive potential surfaces that influence the electron interaction with the dot. These results motivate the development of SET electrode channel where the electron moves towards the dot on the surface with positive potential rather than negative potential surface.
The extinction of Br2 molecules in gas state is measured for different wavelengths of incident light in interval of 370 - 570 nm by method of gas spectroscopy. The measurement is made on the basis of Franck-Condon's principle, under which a transition to a more excited state is done without changing the intercore distance (in further text, R). The graph of energy dependence on extinction is drawn. On the graph are recognized two Gausses slopes and their separation (deconvolution) is done. The complete Gausses functions are determined on graph. The method of mirror symmetry is applied on Gausses slopes of extinction and symmetrical extinction values (Es) are obtained. Borders of Franck-Condon's area are determined from ground state of Linear Harmonic Oscillator (LH0). Tables of dependence on R and the excitation energy are given. On the basis of these tables are drawn potential curves of electron energy E(R) in excited electronic states of Br2 molecules as functions of R in Franck-Condon's area.
The effects of HVA-2 on radiation-induced cross-linkings in 60/40 natural rubber/ linear low density polyethylene (NR/LLDPE) blends was studied. NR/LLDPE was irradiated by using a 3.0 MeV electron beam machine with doses ranging from 0 to 250 kGy. Results showed that under the irradiation employed, the blends NR/LLDPE were cross-linked by the electron beam irradiation. The presence of HVA-2 in the blends caused the optimum dose to decrease and the blends to exhibit higher tensile properties. Further, within the dose range studied, the degradation caused by electron beam irradiation was found to be minimal. The optimized processing conditions were 120oC, 50 rpm rotor speed and 13 min processing time. The gel content, tensile strength, elongation at break, hardness and impact test studies were used to follow the irradiation-induced cross-linkings in the blend. For blends of 60/40 NR/LLDPE with 2.0 phr HVA-2, the optimum tensile strength and dose, were 19 MPa and 100 kGy, respectively. Blends of 60/40 NR/LLDPE without HVA-2, the optimum tensile strength and dose were 17.2 MPa and 200 kGy, respectively.
Hollow epoxy particles (HEP) serving as reinforcing fillers were prepared using the water-based emulsion method in this study. HEP was incorporated into the polyester matrix at various loading, ranging from 0 wt% to 9 wt%, to toughen the brittle polyester thermoset. The polyester composites were prepared using the casting technique. The fracture toughness and impact strength of the polyester composites increased with increasing the HEP loading up to 5 wt%, after which
there was a drop. The improvement in fracture toughness and impact strength is attributed to the good polymer-filler interaction. This finding was further supported by the scanning electron micrograph, in which it was shown that the polyester resin was interlocked into the pore regions of the HEP filler. The reduction in fracture toughness and impact strength of the polyester composite were believed to be attributed to the filler agglomeration. This filler-filler interaction would create stress concentration areas and eventually weakened the interfacial adhesion between the polymer matrix and the filler particles. Hence, lower fracture toughness and impact strength of the highly HEP-filled polyester composites (above 5 wt%) were detected.
We report on the observation of quantum transport and interference in a graphene device that is attached with a pair of split gates to form an electrostatically-defined quantum point contact (QPC). In the low magnetic field regime, the resistance exhibited Fabry-Pérot (FP) resonances due to np'n(pn'p) cavities formed by the top gate. In the quantum Hall (QH) regime with a high magnetic field, the edge states governed the phenomena, presenting a unique condition where the edge channels of electrons and holes along a p-n junction acted as a solid-state analogue of a monochromatic light beam. We observed a crossover from the FP to QH regimes in ballistic graphene QPC under a magnetic field with varying temperatures. In particular, the collapse of the QH effect was elucidated as the magnetic field was decreased. Our high-mobility graphene device enabled observation of such quantum coherence effects up to several tens of kelvins. The presented device could serve as one of the key elements in future electronic quantum optic devices.