A microstructure deformation of indium oxide (In2O3) nanoparticles by an in situ thermal radiation treatment in nitrous oxide plasma was investigated. The In2O3 nanoparticles were completely transformed into nanostructured In2O3 films upon 10 min of treatment time. The treated In2O3 nanoparticle sample showed improvement in crystallinity while maintaining a large surface area of nanostructure morphology. The direct transition optical absorption at higher photon energy and the electrical conductivity of the In2O3 nanoparticles were significantly enhanced by the treatment.
Graphene oxide (GO) film was evaporated onto graphite and used as an electrode to produce electrochemically reduced graphene oxide (ERGO) films by electrochemical reduction in 6 M KOH solution through voltammetric cycling. Fourier transformed infrared and Raman spectroscopy confirmed the presence of ERGO. Electrochemical impedance spectroscopy characterization of ERGO and GO films in ferrocyanide/ferricyanide redox couple with 0.1 M KCl supporting electrolyte gave results that are in accordance with previous reports. Based on the EIS results, ERGO shows higher capacitance and lower charge transfer resistance compared to GO.
This paper presents a numerical study of the thermal performance of fins mounted on the bottom wall of a horizontal channel and cooled with either pure water or an Al2O3-water nanofluid. The bottom wall of the channel is heated at a constant temperature and cooled by mixed convection of laminar flow at a relatively low temperature. The results of the numerical simulation indicate that the heat transfer rate of fins is significantly affected by the Reynolds number (Re) and the thermal conductivity of the fins. The influence of the solid volume fraction on the increase of heat transfer is more noticeable at higher values of the Re.
Silicon/zinc oxide (Si/ZnO) core-shell nanowires (NWs) were prepared on a p-type Si(111) substrate using a two-step growth process. First, indium seed-coated Si NWs (In/Si NWs) were synthesized using a plasma-assisted hot-wire chemical vapor deposition technique. This was then followed by the growth of a ZnO nanostructure shell layer using a vapor transport and condensation method. By varying the ZnO growth time from 0.5 to 2 h, different morphologies of ZnO nanostructures, such as ZnO nanoparticles, ZnO shell layer, and ZnO nanorods were grown on the In/Si NWs. The In seeds were believed to act as centers to attract the ZnO molecule vapors, further inducing the lateral growth of ZnO nanorods from the Si/ZnO core-shell NWs via a vapor-liquid-solid mechanism. The ZnO nanorods had a tendency to grow in the direction of [0001] as indicated by X-ray diffraction and high resolution transmission electron microscopy analyses. We showed that the Si/ZnO core-shell NWs exhibit a broad visible emission ranging from 400 to 750 nm due to the combination of emissions from oxygen vacancies in ZnO and In2O3 structures and nanocrystallite Si on the Si NWs. The hierarchical growth of straight ZnO nanorods on the core-shell NWs eventually reduced the defect (green) emission and enhanced the near band edge (ultraviolet) emission of the ZnO.
Graphene has attracted great interest because of unique properties such as high sensitivity, high mobility, and biocompatibility. It is also known as a superior candidate for pH sensing. Graphene-based ion-sensitive field-effect transistor (ISFET) is currently getting much attention as a novel material with organic nature and ionic liquid gate that is intrinsically sensitive to pH changes. pH is an important factor in enzyme stabilities which can affect the enzymatic reaction and broaden the number of enzyme applications. More accurate and consistent results of enzymes must be optimized to realize their full potential as catalysts accordingly. In this paper, a monolayer graphene-based ISFET pH sensor is studied by simulating its electrical measurement of buffer solutions for different pH values. Electrical detection model of each pH value is suggested by conductance modelling of monolayer graphene. Hydrogen ion (H+) concentration as a function of carrier concentration is proposed, and the control parameter (Ƥ) is defined based on the electro-active ions absorbed by the surface of the graphene with different pH values. Finally, the proposed new analytical model is compared with experimental data and shows good overall agreement.
Nanoporous materials such as Mobil composite material number 41 (MCM-41) are attractive for applications such as catalysis, adsorption, supports, and carriers. Green synthesis of MCM-41 is particularly appealing because the chemical reagents are useful and valuable. We report on the eco-friendly synthesis of MCM-41 nanoporous materials via multi-cycle approach by re-using the non-reacted reagents in supernatant as mother liquor after separating the solid product. This approach was achieved via minimal requirement of chemical compensation where additional fresh reactants were added into the mother liquor followed by pH adjustment after each cycle of synthesis. The solid product of each successive batch was collected and characterized while the non-reacted reagents in supernatant can be recovered and re-used to produce subsequent cycle of MCM-41. The multi-cycle synthesis is demonstrated up to three times in this research. This approach suggests a low cost and eco-friendly synthesis of nanoporous material since less waste is discarded after the product has been collected, and in addition, product yield can be maintained at the high level.
A new method of fabricating high aspect ratio nanostructures in silicon without the use of sub-micron lithographic technique is reported. The proposed method comprises two important steps including the use of CMOS spacer technique to form silicon nitride nanostructure masking followed by deep reactive ion etching (DRIE) of the silicon substrate to form the final silicon nanostructures. Silicon dioxide is used as the sacrificial layer to form the silicon nitride nanostructures. With DRIE a high etch selectivity of 50:1 between silicon and silicon nitride was achieved. The use of the spacer technique is particularly advantageous where self-aligned nanostructures with potentially unlimited lengths are formed without the need of submicron lithographic tools and resist materials. With this method, uniform arrays of 100 nm silicon nanostructures which are at least 4 μm tall with aspect ratio higher than 40 were successfully fabricated.
The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters against those of a metal-oxide-semiconductor field-effect transistor (MOSFET). Both CNT and MOSFET models considered agree well with the trends in the available experimental data. The results obtained show that nanotubes can significantly reduce the drain-induced barrier lowering effect and subthreshold swing in silicon channel replacement while sustaining smaller channel area at higher current density. Performance metrics of both devices such as current drive strength, current on-off ratio (Ion/Ioff), energy-delay product, and power-delay product for logic gates, namely NAND and NOR, are presented. Design rules used for carbon nanotube field-effect transistors (CNTFETs) are compatible with the 45-nm MOSFET technology. The parasitics associated with interconnects are also incorporated in the model. Interconnects can affect the propagation delay in a CNTFET. Smaller length interconnects result in higher cutoff frequency.
The junctionless nanowire transistor is a promising alternative for a new generation of nanotransistors. In this letter the atomic force microscopy nanolithography with two wet etching processes was implemented to fabricate simple structures as double gate and single gate junctionless silicon nanowire transistor on low doped p-type silicon-on-insulator wafer. The etching process was developed and optimized in the present work compared to our previous works. The output, transfer characteristics and drain conductance of both structures were compared. The trend for both devices found to be the same but differences in subthreshold swing, 'on/off' ratio, and threshold voltage were observed. The devices are 'on' state when performing as the pinch off devices. The positive gate voltage shows pinch off effect, while the negative gate voltage was unable to make a significant effect on drain current. The charge transmission in devices is also investigated in simple model according to a junctionless transistor principal.
Silver nanoparticles and silver-graphene oxide nanocomposites were fabricated using a rapid and green microwave irradiation synthesis method. Silver nanoparticles with narrow size distribution were formed under microwave irradiation for both samples. The silver nanoparticles were distributed randomly on the surface of graphene oxide. The Fourier transform infrared and thermogravimetry analysis results showed that the graphene oxide for the AgNP-graphene oxide (AgGO) sample was partially reduced during the in situ synthesis of silver nanoparticles. Both silver nanoparticles and AgGO nanocomposites exhibited stronger antibacterial properties against Gram-negative bacteria (Salmonella typhi and Escherichia coli) than against Gram-positive bacteria (Staphyloccocus aureus and Staphyloccocus epidermidis). The AgGO nanocomposites consisting of approximately 40 wt.% silver can achieve antibacterial performance comparable to that of neat silver nanoparticles.
This study describes a novel fabrication technique to grow gold nanoparticles (AuNPs) directly on seeded ZnO sacrificial template/polymethylsilsesquioxanes (PMSSQ)/Si using low-temperature hydrothermal reaction at 80°C for 4 h. The effect of non-annealing and various annealing temperatures, 200°C, 300°C, and 400°C, of the ZnO-seeded template on AuNP size and distribution was systematically studied. Another PMMSQ layer was spin-coated on AuNPs to study the memory properties of organic insulator-embedded AuNPs. Well-distributed and controllable AuNP sizes were successfully grown directly on the substrate, as observed using a field emission scanning electron microscope followed by an elemental analysis study. A phase analysis study confirmed that the ZnO sacrificial template was eliminated during the hydrothermal reaction. The AuNP formation mechanism using this hydrothermal reaction approach was proposed. In this study, the AuNPs were charge-trapped sites and showed excellent memory effects when embedded in PMSSQ. Optimum memory properties of PMMSQ-embedded AuNPs were obtained for AuNPs synthesized on a seeded ZnO template annealed at 300°C, with 54 electrons trapped per AuNP and excellent current-voltage response between an erased and programmed device.
A network of gold nanostructures exhibiting one-dimensional gold nanostructure properties may become a prospective novel structure for optical, electrical and catalytic applications benefited by its unusual characteristics resulting from the collective properties of individual nanostructures in the network. In this paper, we demonstrate a facile method for the formation of high-density gold nanonetwork film on the substrate surface composed of quasi-1D nanoparticles (typically fusiform) with length ca. 10 nm - via reduction of gold ions in the presence of nanoseeds attached surface, binary surfactants of cetyltrimethylammonium bromide and hexamethyleneteramine and Ag+ ions. The length of the nanonetworks can be up to ca. 100 nm, which corresponds to the aspect ratio of ca. 10. The quasi-1D gold nanostructures as well as the nanonetworks were found to be sensitive to the binary surfactants system and the Ag+ ions as they can only be formed if all the chemicals are available in the reaction. The nanonetworks exhibit unique 1D optical properties with the presence of transverse and longitudinal surface plasmon resonance absorption. Owing to their peculiar structures that are composed of small quasi-1D nanoparticles, the nanonetworks may produce unusual optical and catalytic properties, which are potentially used in surface-enhanced Raman scattering, catalysis and optical and non-linear optical applications.
The band alignment of ZrO2/interfacial layer/Si structure fabricated by simultaneous oxidation and nitridation of sputtered Zr on Si in N2O at 700°C for different durations has been established by using X-ray photoelectron spectroscopy. Valence band offset of ZrO2/Si was found to be 4.75 eV, while the highest corresponding conduction offset of ZrO2/interfacial layer was found to be 3.40 eV; owing to the combination of relatively larger bandgaps, it enhanced electrical breakdown field to 13.6 MV/cm at 10-6 A/cm2.
We report on a process for fabricating self-aligned tungsten (W) nanowires with polycrystalline silicon core. Tungsten nanowires as thin as 10 nm were formed by utilizing polysilicon sidewall transfer technology followed by selective deposition of tungsten by chemical vapor deposition (CVD) using WF6 as the precursor. With selective CVD, the process is self-limiting whereby the tungsten formation is confined to the polysilicon regions; hence, the nanowires are formed without the need for lithography or for additional processing. The fabricated tungsten nanowires were observed to be perfectly aligned, showing 100% selectivity to polysilicon and can be made to be electrically isolated from one another. The electrical conductivity of the nanowires was characterized to determine the effect of its physical dimensions. The conductivity for the tungsten nanowires were found to be 40% higher when compared to doped polysilicon nanowires of similar dimensions.
A simple method for the synthesis of ZnO nanofilms composed of vertical array of quasi-1D ZnO nanostructures (quasi-NRs) on the surface was demonstrated via a 1D crystal growth of the attached nanoseeds under a rapid hydrolysis process of zinc salts in the presence of ammonia at room temperature. In a typical procedure, by simply controlling the concentration of zinc acetate and ammonia in the reaction, a high density of vertically oriented nanorod-like morphology could be successfully obtained in a relatively short growth period (approximately 4 to 5 min) and at a room-temperature process. The average diameter and the length of the nanostructures are approximately 30 and 110 nm, respectively. The as-prepared quasi-NRs products were pure ZnO phase in nature without the presence of any zinc complexes as confirmed by the XRD characterisation. Room-temperature optical absorption spectroscopy exhibits the presence of two separate excitonic characters inferring that the as-prepared ZnO quasi-NRs are high-crystallinity properties in nature. The mechanism of growth for the ZnO quasi-NRs will be proposed. Due to their simplicity, the method should become a potential alternative for a rapid and cost-effective preparation of high-quality ZnO quasi-NRs nanofilms for use in photovoltaic or photocatalytics applications.PACS: 81.07.Bc; 81.16.-c; 81.07.Gf.
An analysis is carried out to study the steady two-dimensional stagnation-point flow of a nanofluid over a stretching/shrinking sheet in its own plane. The stretching/shrinking velocity and the ambient fluid velocity are assumed to vary linearly with the distance from the stagnation point. The similarity equations are solved numerically for three types of nanoparticles, namely copper, alumina, and titania in the water-based fluid with Prandtl number Pr = 6.2. The skin friction coefficient, Nusselt number, and the velocity and temperature profiles are presented graphically and discussed. Effects of the solid volume fraction φ on the fluid flow and heat transfer characteristics are thoroughly examined. Different from a stretching sheet, it is found that the solutions for a shrinking sheet are non-unique.
Doxorubicin-loaded micelles were prepared from a copolymer comprising cholic acid (CA) and polyethyleneimine (PEI) for the delivery of antitumor drugs. The CA-PEI copolymer was synthesized via pairing mediated by N,N'-dicyclohexylcarbodiimide and N-hydroxysuccinimide using dichloromethane as a solvent. Fourier transform infrared and nuclear magnetic resonance analyses were performed to verify the formation of an amide linkage between CA and PEI and doxorubicin localization into the copolymer. Dynamic light scattering and transmission electron microscopy studies revealed that the copolymer could self-assemble into micelles with a spherical morphology and an average diameter of <200 nm. The CA-PEI copolymer was also characterized by X-ray diffraction and differential scanning calorimetry. Doxorubicin-loaded micelles were prepared by dialysis method. A drug release study showed reduced drug release with escalating drug content. In a cytotoxicity assay using human colorectal adenocarcinoma (DLD-1) cells, the doxorubicin-loaded CA-PEI micelles exhibited better antitumor activity than that shown by doxorubicin. This is the first study on CA-PEI micelles as doxorubicin carriers, and this study demonstrated that they are promising candidates as carriers for sustained targeted antitumor drug delivery system.
This work presents some comments concerning the paper entitled 'Lattice Boltzmann simulation of alumina-water nanofluid in a square cavity' by Yurong He, Cong Qi, Yanwei Hu, Bin Qin, Fengchen Li and Yulong Ding which was published in Nanoscale Research Letters in 2011. The comments are related to the numerical parameters and the computed results of average Nusselt number.
Recent development of trilayer graphene nanoribbon Schottky-barrier field-effect transistors (FETs) will be governed by transistor electrostatics and quantum effects that impose scaling limits like those of Si metal-oxide-semiconductor field-effect transistors. The current-voltage characteristic of a Schottky-barrier FET has been studied as a function of physical parameters such as effective mass, graphene nanoribbon length, gate insulator thickness, and electrical parameters such as Schottky barrier height and applied bias voltage. In this paper, the scaling behaviors of a Schottky-barrier FET using trilayer graphene nanoribbon are studied and analytically modeled. A novel analytical method is also presented for describing a switch in a Schottky-contact double-gate trilayer graphene nanoribbon FET. In the proposed model, different stacking arrangements of trilayer graphene nanoribbon are assumed as metal and semiconductor contacts to form a Schottky transistor. Based on this assumption, an analytical model and numerical solution of the junction current-voltage are presented in which the applied bias voltage and channel length dependence characteristics are highlighted. The model is then compared with other types of transistors. The developed model can assist in comprehending experiments involving graphene nanoribbon Schottky-barrier FETs. It is demonstrated that the proposed structure exhibits negligible short-channel effects, an improved on-current, realistic threshold voltage, and opposite subthreshold slope and meets the International Technology Roadmap for Semiconductors near-term guidelines. Finally, the results showed that there is a fast transient between on-off states. In other words, the suggested model can be used as a high-speed switch where the value of subthreshold slope is small and thus leads to less power consumption.
We present an investigation on a coupled system consists of gold nanoparticles and silicon nanocrystals. Gold nanoparticles (AuNPs) embedded into porous silicon (PSi) were prepared using the electrochemical deposition method. Scanning electron microscope images and energy-dispersive X-ray results indicated that the growth of AuNPs on PSi varies with current density. X-ray diffraction analysis showed the presence of cubic gold phases with crystallite sizes around 40 to 58 nm. Size dependence on the plasmon absorption was studied from nanoparticles with various sizes. Comparison with the reference sample, PSi without AuNP deposition, showed a significant blueshift with decreasing AuNP size which was explained in terms of optical coupling between PSi and AuNPs within the pores featuring localized plasmon resonances.