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  1. A.F. Abd Rahim, N. S. I. Mohamad Shuhaimi, N. S. Mohd Razal, R. Radzali, A. Mahmood, I.H. Hamzah, et al.
    ESTEEM Academic Journal, 2021;17(2):78-88.
    MyJurnal
    Ge is considered to have several advantages over Si due to its high mobility
    and direct bandgap, which makes it ideal for optoelectronic applications.
    The manipulation of bulk Ge into small structures has drawn a lot of interest
    due to the numerous distinctive properties caused by the impact of size
    quantization. Porous materials are ideally suited for sensing application due
    to theirlarge effective surface area beside the fabrication of porous is simple.
    In this work, porous Ge is investigated for potential visible to near-infrared
    metal semiconductor metal (MSM) photodetector. The study investigated the
    performance and characterization of porous Ge (P-Ge) on Si substrate at
    different depths of porous (1 µm, 0.25 µm and 0.01 µm) by using SILVACO
    Athena and Atlas device simulator. Athena process simulator was used to
    construct the device structure while ATLAS device simulator was used to
    characterize the electrical and optical characteristics’ effect on the different
    sizes of the P-Ge fabricated on the Si substrate. The comparison of the porous
    devices were then made with bulk Ge devices (bulk Ge-on-Si, bulk Ge-onGe) to identify the exploitation of porosity resulted in a significant
    performance of current gains, spectral response, Schottky barrier height,
    and also photo and dark current. It was found that the P-Ge at 0.01 µm depth
    showed an improved current gain compared to other porous structures while
    bulk Ge-on-Si obtain greater current gain than bulk Ge-on-Ge. This evidence
    indicates that P-Ge produces a better performance of MSM photodetector
    than the bulk device. The spectral response of P-Ge shows a peak response
    at 800nm, which is the near-infrared (IR) region supporting the feasibility of
    the P-Ge to be utilized for visible to near IR photodetection.
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