This work investigates the development of a nanofabrication process to achieve high aspect-ratio nanostructures on quartz substrates using electron beam lithography (EBL) patterning and fluorinated plasma etching processes. An imaging layer of a poly(methyl methacrylate) bi-layer resist was spun coated on quartz substrate and exposed by an e-beam with the designed patterns of sub-100 nm feature sizes using a Raith-150 EBL patterning tool. Additive pattern transfer was employed by depositing a 40 nm thick Nichrome layer on the resist pattern using a metal evaporator which was later lifted off by soaking in acetone. Nichrome was employed as an etch mask and an Oxford Plasmalab 80Plus reactive ion etcher was used for the etching process. The etching process was carried out in a gas mixture of CHF(3)/Ar with a flow rate ratio of 50/30 sccm, pressure of 20 mTorr, radiofrequency power of 200 W and at room temperature. These etching process parameters were found to achieve a 10 nm min(-1) etch rate and tall vertical side walls profile. An aspect-ratio of 10:1 was achieved on 60 nm feature size structures.