Tin Oxide (SnO2) is an n-type semiconductor with a direct bandgap of 3.6eV.
It is highly conductive, transparent, and gas sensitive. The SnO2 can be
unstable depending on certain parameters and methods to prepare it. In this
work, the thin film of SnO2 doped with Al2O3 was deposited by
electrospinning on glass substrates. The thin films were then annealed at
100°C, 200°C, 300°C, 400°C, 500°C, and then the optical and physical films
were examined. Measurements of X-Ray Diffraction (XRD) and Microscope
were performed for structural and morphological analysis. The optical
characteristics were analyzed using the UV-Vis spectrophotometer. As the
annealing temperature increases, the optical transmittance also increases
due to the increase in film homogeneity and the degree of crystallinity of the
film. The rise in temperature leads to a decrease in absorption values.