A nanogenerator (NG) is an energy harvester device that converts mechanical energy into electrical energy on a small scale by relying on physical changes. Piezoelectric semiconductor materials play a key role in producing high output power in piezoelectric nanogenerator. Low cost, reliability, deformation, and electrical and thermal properties are the main criteria for an excellent device. Typically, there are several main types of piezoelectric materials, zinc oxide (ZnO) nanorods, barium titanate (BaTiO3) and lead zirconate titanate (PZT). Among those candidate, ZnO nanorods have shown high performance features due to their unique characteristics, such as having a wide-bandgap semiconductor energy of 3.3 eV and the ability to produce more ordered and uniform structures. In addition, ZnO nanorods have generated considerable output power, mainly due to their elastic nanostructure, mechanical stability and appropriate bandgap. Apart from that, doping the ZnO nanorods and adding doping impurities into the bulk ZnO nanorods are shown to have an influence on device performance. Based on findings, Ni-doped ZnO nanorods are found to have higher output power and surface area compared to other doped. This paper discusses several techniques for the synthesis growth of ZnO nanorods. Findings show that the hydrothermal method is the most commonly used technique due to its low cost and straightforward process. This paper reveals that the growth of ZnO nanorods using the hydrothermal method has achieved a high power density of 9 µWcm-2.
The conventional electron transport layer (ETL) TiO2 has been widely used in perovskite solar cells (PSCs), which have produced exceptional power conversion efficiencies (PCE), allowing the technology to be highly regarded and propitious. Nevertheless, the recent high demand for energy harvesters in wearable electronics, aerospace, and building integration has led to the need for flexible solar cells. However, the conventional TiO2 ETL layer is less preferred, where a crystallization process at a temperature as high as 450 °C is required, which degrades the plastic substrate. Zinc oxide nanorods (ZnO NRs) as a simple and low-cost fabrication material may fulfil the need as an ETL, but they still suffer from low PCE due to atomic defect vacancy. To delve into the issue, several dopants have been reviewed as an additive to passivate or substitute the Zn2+ vacancies, thus enhancing the charge transport mechanism. This work thereby unravels and provides a clear insight into dopant engineering in ZnO NRs ETL for PSC.