A new method of fabricating high aspect ratio nanostructures in silicon without the use of sub-micron lithographic technique is reported. The proposed method comprises two important steps including the use of CMOS spacer technique to form silicon nitride nanostructure masking followed by deep reactive ion etching (DRIE) of the silicon substrate to form the final silicon nanostructures. Silicon dioxide is used as the sacrificial layer to form the silicon nitride nanostructures. With DRIE a high etch selectivity of 50:1 between silicon and silicon nitride was achieved. The use of the spacer technique is particularly advantageous where self-aligned nanostructures with potentially unlimited lengths are formed without the need of submicron lithographic tools and resist materials. With this method, uniform arrays of 100 nm silicon nanostructures which are at least 4 μm tall with aspect ratio higher than 40 were successfully fabricated.
We report on a process for fabricating self-aligned tungsten (W) nanowires with polycrystalline silicon core. Tungsten nanowires as thin as 10 nm were formed by utilizing polysilicon sidewall transfer technology followed by selective deposition of tungsten by chemical vapor deposition (CVD) using WF6 as the precursor. With selective CVD, the process is self-limiting whereby the tungsten formation is confined to the polysilicon regions; hence, the nanowires are formed without the need for lithography or for additional processing. The fabricated tungsten nanowires were observed to be perfectly aligned, showing 100% selectivity to polysilicon and can be made to be electrically isolated from one another. The electrical conductivity of the nanowires was characterized to determine the effect of its physical dimensions. The conductivity for the tungsten nanowires were found to be 40% higher when compared to doped polysilicon nanowires of similar dimensions.
This paper presents a functionalized, horizontally oriented carbon nanotube network as a sensing element to enhance the sensitivity of a pressure sensor. The synthesis of horizontally oriented nanotubes from the AuFe catalyst and their deposition onto a mechanically flexible substrate via transfer printing are studied. Nanotube formation on thermally oxidized Si (100) substrates via plasma-enhanced chemical vapor deposition controls the nanotube coverage and orientation on the flexible substrate. These nanotubes can be simply transferred to the flexible substrate without changing their physical structure. When tested under a pressure range of 0 to 50 kPa, the performance of the fabricated pressure sensor reaches as high as approximately 1.68%/kPa, which indicates high sensitivity to a small change of pressure. Such sensitivity may be induced by the slight contact in isolated nanotubes. This nanotube formation, in turn, enhances the modification of the contact and tunneling distance of the nanotubes upon the deformation of the network. Therefore, the horizontally oriented carbon nanotube network has great potential as a sensing element for future transparent sensors.
In the present investigation, gold-silver@titania (Au-Ag@TiO2) plasmonic nanocomposite materials with different Au and Ag compositions were prepared using a simple one-step chemical reduction method and used as photoanodes in high-efficiency dye-sensitized solar cells (DSSCs). The Au-Ag incorporated TiO2 photoanode demonstrated an enhanced solar-to-electrical energy conversion efficiency of 7.33%, which is ∼230% higher than the unmodified TiO2 photoanode (2.22%) under full sunlight illumination (100 mW cm-2, AM 1.5G). This superior solar energy conversion efficiency was mainly due to the synergistic effect between the Au and Ag, and their surface plasmon resonance effect, which improved the optical absorption and interfacial charge transfer by minimizing the charge recombination process. The influence of the Au-Ag composition on the overall energy conversion efficiency was also explored, and the optimized composition with TiO2 was found to be Au75-Ag25. This was reflected in the femtosecond transient absorption dynamics in which the electron-phonon interaction in the Au nanoparticles was measured to be 6.14 ps in TiO2/Au75:Ag25, compared to 2.38 ps for free Au and 4.02 ps for TiO2/Au100:Ag0. The slower dynamics indicates a more efficient electron-hole separation in TiO2/Au75:Ag25 that is attributed to the formation of a Schottky barrier at the interface between TiO2 and the noble metal(s) that acts as an electron sink. The significant boost in the solar energy conversion efficiency with the Au-Ag@TiO2 plasmonic nanocomposite showed its potential as a photoanode for high-efficiency DSSCs.
In this work, the piezoresistive effects of defective graphene used on a flexible pressure sensor are demonstrated. The graphene used was deposited at substrate temperatures of 750, 850 and 1000 °C using the hot-filament thermal chemical vapor deposition method in which the resultant graphene had different defect densities. Incorporation of the graphene as the sensing materials in sensor device showed that a linear variation in the resistance change with the applied gas pressure was obtained in the range of 0 to 50 kPa. The deposition temperature of the graphene deposited on copper foil using this technique was shown to be capable of tuning the sensitivity of the flexible graphene-based pressure sensor. We found that the sensor performance is strongly dominated by the defect density in the graphene, where graphene with the highest defect density deposited at 750 °C exhibited an almost four-fold sensitivity as compared to that deposited at 1000 °C. This effect is believed to have been contributed by the scattering of charge carriers in the graphene networks through various forms such as from the defects in the graphene lattice itself, tunneling between graphene islands, and tunneling between defect-like structures.