The most sensitive part of a metal-oxide-semiconductor (MOS) structure to ionizing radiation is the
oxide insulating layer. When ionizing radiation passes through the oxide, the energy deposited creates
electron/hole pairs. Oxide trapped charge causes a negative shift in capacitance-voltage (C-V)
characteristics. These changes are the results of, firstly, incre using trapped positive charge in the
oxide, which causes a parallel shift of the curve to more negative voltages, and secondly, increasing
interface trap density, which causes the curve to stretch-out.