The advantage of plasma enhanced chemical vapor deposition (PECVD) method is the ability to deposit thin films at relatively low temperature. Plasma power supports the growth process by decomposing hydrocarbon to carbon radicals which will be deposited later on metal catalyst. In this work, we have successfully synthesis graphene on Ni and Co films at relatively low temperature and optimize the synthesis conditions by adjusting the plasma power. Low temperature growth of graphene was optimized at 600°C after comparing the quality of as-grown graphene at several temperatures from 400 to 800°C and by varying plasma powers in the range of 20 - 100 W. Raman analysis of the as-grown samples showed that graphene prefers lower plasma power of 40 W. The annihilation of graphene formation at higher plasma powers is attributed to the presence of high concentration of hydrogen radical from methane which recombines with carbon elements on thin film surface. The optimum graphene growth conditions were obtained at growth temperature of 600°C, plasma power of 40 W and growth time of 10 min with methane flow rate of 120 sccm.
Sifat-sifat kimia dan fizik kompleks tungsten nitrosilditiolena dengan formula am [WTp*(NO)(L)] dengan Tp* = tris(3,5- dimetilpirazolil)hidroborat dan L = toluena-3,4-ditiolat (L1), 1,2-benzenaditiolat (L2), 3,6-dikloro-1,2-benzenaditiolat (L3), telah dikaji untuk dijadikan pemeka foto bagi elektrod anod untuk sel fotoelektrokimia. Kompleks tungsten nitrosilditiolena disintesiskan dan diciri dengan menggunakan spektroskopi (IR) dan ultra-lembahyung dan cahaya nampak (UV-Vis) dan analisis mikro unsur CHNS. Teknik voltametri berkitar (CV) telah digunakan untuk menentukan keupayaan redoks kompleks
dan seterusnya aras jalur tenaga telah ditentukan daripada data yang diperoleh. Ketiga-tiga kompleks menunjukkan jurang jalur tenaga dalam julat 1.59 – 1.63 eV. Jurang jalur tenaga yang dikira daripada analisis CV adalah bersepadan dengan anggaran daripada spektrum serapan elektronik kompleks. Berdasarkan gambar rajah jalur tenaga, ketiga-tiga kompleks dijangka mempunyai potensi untuk digunakan sebagai pemeka foto bagi fotoelektrod sel fotoelektrokimia.
This paper reports on the synthesis and characterization of CdTe-CdSe core-shell quantum dots (QDs) with luminescent from 650 to 720 nm. The QDs were synthesized using a wet-chemical process at a moderate temperature (300 °C) following two-steps process of core and shell synthesis. The photoluminescence characterization on the QDs showed that the QDs emitted light in the range of red regime with quantum yield as high as 37%. Owing to their unique photoluminescence characteristics (high quantum yield and narrow spectrum), the QDs may find a potential application in a variety of applications such as LED, solar cell and bio-labeling.
The aim of this project was to investigate the effect of ZnO addition on the structural properties of ZnO-PANi/carbon black thin films. The sol gel method was employed for the preparation of ZnO sol. The sol was dried for 24 h at 100°C and then annealed at 600°C for 5 h. XRD characterization of the ZnO powder showed the formation of wurtzite type ZnO
crystals. The ZnO powder were mixed into PANi/carbon black solution which was dissolved into M-Pyrol, N-Methyl-2-Pyrrolidinone (NMP) to produce a composite solution of ZnO-PANi/carbon black. The weight ratio of ZnO were 4 wt%, 6 wt% and 8 wt%. The composite solutions were deposited onto glass substrates using a spin-coating technique to fabricate
ZnO-PANi/carbon black thin films. AFM characterization showed the decreasing of average roughness from 7.98 nm to 2.23 nm with the increment of ZnO addition in PANi/carbon black films. The thickness of the films also decreased from 59.5 nm to 28.3 nm. FESEM image revealed that ZnO-PANi/carbon black thin films have changed into agglomerated
surface morphology resulting in the increment of porosity of the films.