The energy density of conventional supercapacitors is in the range of 6-10 Wh kg-1, which has restricted them from many applications that require devices with long durations. Herein, we report a method for enhancing the energy density of a device through the parallel stacking of five copper foils coated on each side with graphene nanoplatelets. Microporous papers immersed in 2 M aqueous sodium sulphate were used as separators. With a low contact resistance of 0.05 Ω, the supercapacitor yielded an optimum specific energy density and a specific power density of 24.64 Wh kg-1 and 402 W kg-1 at 0.8 V, respectively. The working potential was increased to 2.4 V when three of the supercapacitors were connected in series, forming a tandem device. Its potential for real applications was manifested by the ability to light up a light-emitting diode for 40 s after charging for 60 s.
We demonstrated a simple and scalable fabrication route of a nitrogen-doped reduced graphene oxide (N-rGO) photodetector on an 8 in. wafer-scale. The N-rGO was prepared through in situ plasma treatment in an acetylene-ammonia atmosphere to achieve an n-type semiconductor with substantial formation of quaternary-N substituted into the graphene lattice. The morphology, structural, chemical composition, and electrical properties of the N-rGO were carefully characterized and used for the device fabrication. The N-rGO devices were fabricated in a simple metal-semiconductor-metal structure with unconventional metal-on-bottom configuration to promote high-performance photodetection. The N-rGO devices exhibited enhanced photoresponsivity as high as 0.68 A W-1 at 1.0 V, which is about 2 orders of magnitude higher compared to a pristine graphene and wide-band photoinduced response from the visible to the near-infrared region with increasing sensitivity in the order of 785, 632.8, and 473 nm excitation wavelengths. We also further demonstrated a symmetric characteristic of the photoinduced response to any position of local laser excitation with respect to the electrodes. The excellent features of wafer-scale N-rGO devices suggest a promising route to merge the current silicon technology and two-dimensional materials for future optoelectronic devices.
This paper presents a straightforward plasma treatment modification of graphene with an enhanced piezoresistive effect for the realization of a high-performance pressure sensor. The changes in the graphene in terms of its morphology, structure, chemical composition, and electrical properties after the NH3/Ar plasma treatment were investigated in detail. Through a sufficient plasma treatment condition, our studies demonstrated that plasma-treated graphene sheet exhibits a significant increase in sensitivity by one order of magnitude compared to that of the unmodified graphene sheet. The plasma-doping introduced nitrogen (N) atoms inside the graphene structure and was found to play a significant role in enhancing the pressure sensing performance due to the tunneling behavior from the localized defects. The high sensitivity and good robustness demonstrated by the plasma-treated graphene sensor suggest a promising route for simple, low-cost, and ultrahigh resolution flexible sensors.