Gallium nitride is considered as the most promising material for liquid-phase sensor applications due to its chemical stability and high internal piezoelectric polarization. In this work, the sensing responses of undoped-AlGaN/GaN two terminal devices upon exposure to various pH levels in aqueous solution (a mixture of HCl and NaOH) as well as their possible sensing mechanism have been investigated. No reference voltage or gate voltage is applied. The changes in drain-source current, IDS as a function of pH level were evaluated. In the acidic region, there was an almost linear change in IDS where IDS decreased with the increase in pH level. Hence, the translated channel resistance increases with the pH level. High H+ ion concentration at low pH level which corresponds to the large net positive potential on the surface leads to the enhancement of the flow of electrons in 2DEG channel. As the pH level was increased towards neutral point in the acidic region which corresponds to the increase of OH- ion concentration, the net surface potential on the surface starts to be dominated by negative potential. As a result, the 2DEG channel starts to deplete which resulted in the increase of channel resistance. The estimated current and resistance change for sensing area of 1 mm2 and drain-source voltage, VDS of 1- 6 V are in the range of 2.16-80.1 mA/pH and 154.6-500.5 kΩ/pH, respectively. However, the linear decreases of IDS were not continuously observed in the basic region where OH- ions were dominant. The IDS levels were high, showing that the flows of carriers in 2DEG channel were enhanced again. The resistance was low and almost constant in the basic region. It seems to be resulted by the formation of thin Ga(x)O(y) layer on the AlGaN surface contributed by the interaction of OH- with the Ga-face surface. Hence, the net potential on the AlGaN surface seems to be dominated again by the net positive surface potential.
We report the formation of macropores in n-Si (100) substrates for different etching times of 20, 40 and 60 min at a constant current density of 25 mA/cm2 under front-side illumination in HF:ethanol (1:4) solution. After etching for 20 min, four-branch-shaped pores of various sizes were observed at discrete locations. Etching time of 40 min led to the formation of highly connected four-branch-shaped pores as the branches of adjacent pores appeared to connect to each other. As the etching time was increased further to 60 min, the density of interconnected branches increased remarkably. The macropore formation process occurred in three consecutive phases. The current burst model was used to discuss this process. Formation of four-branch-shaped pores at random locations were observed because current bursts are more likely to nucleate where other current bursts took place initially.
Gallium nitride with wurtzite crystal structure is a chemically stable semiconductor with high internal spontaneous and piezoelectric polarization, which make it highly suitable materials to create very sensitive and robust sensors for the detection of ions, gases and liquids. Sensing characteristics of an open-gate liquid-phase sensor fabricated on undoped-AlGaN/GaN high-electron-mobility-transistor (HEMT) structure in aqueous solution was investigated. In ambient atmosphere, the open-gate undoped AlGaN/GaN HEMT clearly showed only the presence of linear region of currents while Si-doped AlGaN/GaN showed the linear and saturation regions of currents, very similar to those of gated devices. This seems to show that very low Fermi level pinning by surface states exists in undoped AlGaN/GaN sample. In aqueous solution, the typical current-voltage (I-V) characteristics of HEMTs with good gate controllability were observed. The potential of the AlGaN surface at the open-gate area is effectively controlled via aqueous solution by Ag/AgCl reference gate electrode. The open-gate undoped AlGaN/GaN HEMT structure is capable of stable operation in aqueous electrolytes and exhibit linear sensitivity, and high sensitivity of 1.9 mA/pH or 3.88 mA/mm/pH at drain-source voltage, VDS = 5 V was obtained. Due to large leakage current where it increases with the negative reference gate voltage, the Nernstian’s like sensitivity cannot be determined. Suppression of current leakage is likely to improve the device performance. The open-gate undoped-AlGaN/GaN structure is expected to be suitable for pH sensing application.