This study presents the sensitivity of graphene nanoribbon (GNR) when exposed to ammonia gas at room temperature. Alumina were used as a substrate and coated with GNR as sensing film for ammonia gas detection. Four different concentration of GNR in the category of maximum, high, low, and minimum were prepared. Each category of GNR will be dispersed on alumina substrate with area of 1cm2 and 4cm2. 30nm of gold contacts are sputtered on both ends of the sensing film. The ammonia gas can be detected by measuring the changes in resistance. The GNR as ammonia sensor shows good responses at room temperature. In repeatability test, maximum GNR shows least variation when exposed to ammonia with the value of 1.01% (4cm2) and 2.12% (1cm2). In a sensitivity test, 0.25% to 1.00% of ammonia gas was used and tested on maximum GNR. Maximum GNR on 4cm2 substrate shows higher sensitivity as compared to 1cm2. Reaction time of GNR on ammonia gas decreased as the concentration of ammonia increased. Larger surface area of sensing element required lesser reaction time.
A numerical simulation and analysis was performed to investigate the effect of absorber and buffer layer band gap grading and on a Copper-Indium-Gallium-Diselenide (CIGS) solar cell. The software used is the Solar Cell Capacitance Simulator (SCAPS). The absorber and buffer layer energy band structures’ effect on the cell’s output parameters such as open circuit voltage, short circuit current density, fill factor and efficiency were extensively simulated. Two structures of the energy band gap were simulated and studied for each of the absorber and buffer layer. The simulation was done on the uniform structure in which the energy band gap is constant throughout the layer. It was then continued on the cell with graded band structure, where the energy band gap of the material is varied throughout the layer. It was found that the cell with graded band structure in absorber and buffer layer had demonstrated higher efficiency and better performance in comparison with the cell with uniform band gap structure.
Detection and quantification of DNA is critical to many areas of life sciences and health care, from
disease diagnosis to drug screening. The transduction of DNA through electrochemical methods have a fast response rate and with a conductometric device like the silicon nanowire which can be fabricated to have a similar diameter of the DNA molecule being targeted, detection is real-time. Critical to this is the interfacing of a current-source and an amplifier capable of achieving a maximum of 10 pico ampere input bias. In this project, we fabricated a silicon nanowire using the top down approach and built a circuit that can mimic the output signal as low as 12 nA and achieved a gain of 1 million to be interfaced with the nanowire for real-time DNA detection.