In this study, the synthesis of poly [N-9'-heptadecanyl-2, 7-carbazole-alt-5, 5-(4', 7'-di-2-thienyl-2', 1', 3'-benzothiadiazole)] (PCDTBT) nanotubes via a templating method is reported. PCDTBT nanotubes were successfully grown by immersing the porous alumina template into 15 mg/ml of solution concentration for 2- and 24-h periods and annealed at 50°C. Changes in morphological and optical properties between nanotubes of different infiltration times (2 and 24 h) as well as its thin films are observed. The longer infiltration time of 24 h produced nanotubes with enhanced morphological, structural, and optical properties. Nanotubes that are formed between 2 and 24 h of infiltration show enhancement in absorption, photoluminescence, and shift in Raman peak if compared to their thin films.
In this study, the spin coating of template-assisted method is used to synthesize poly[2,7-(9,9-dioctylfluorene)-alt-4,7-bis(thiophen-2-yl)benzo-2,1,3-thiadiazole] (PFO-DBT) nanorod bundles. The morphological, structural, and optical properties of PFO-DBT nanorod bundles are enhanced by varying the spin coating rate (100, 500, and 1,000 rpm) of the common spin coater. The denser morphological distributions of PFO-DBT nanorod bundles are favorably yielded at the low spin coating rate of 100 rpm, while at high spin coating rate, it is shown otherwise. The auspicious morphologies of highly dense PFO-DBT nanorod bundles are supported by the augmented absorption and photoluminescence.
The use of templating method to synthesize the vanadyl 2,9,16,23-tetraphenoxy-29H,31H-phthalocyanine (VOPcPhO):[6,6]-phenyl C71 butyric acid methyl ester (PC71BM) composite nanotubes is presented here. VOPcPhO is a p-type material and PC71BM is an n-type material which acts as an electron donor and electron acceptor, respectively. Both materials have been studied due to their potential applications as solar energy converter and organic electronics. High-resolution transmission electron microscope (HRTEM) and field emission scanning electron microscope (FESEM) images have shown the replication of the porous template diameter of approximately 200 nm with a superior incorporation of both VOPcPhO and PC71BM. VOPcPhO:PC71BM composite nanotubes showed the significant properties improvement if compared over their bulk heterojunction counterpart. UV-vis spectra of composite nanotubes show a shift to a longer wavelength at the absorption peaks. Significant quenching has been attained by the photoluminescence spectra of VOPcPhO:PC71BM composite nanotubes which supports the redshift of UV-vis absorption spectra. Presumably, the photo-induced charge transfer and charge carrier dissociation can be enhanced from the VOPcPhO:PC71BM composite nanotubes rather than the bulk heterojunction.
We demonstrated high-quality single crystalline a-plane undoped-gallium nitride grown on a nonpatterned r-plane sapphire substrate via metal-organic chemical vapor deposition. The effect of four different numbers of sandwiched strain-periodic AlN/GaN multilayers on the strain state, crystal quality, optical and electrical properties was investigated. Field emission scanning electron microscopy and atomic force microscopy showed that the surface morphology was improved upon insertion of 120 pairs of AlN/GaN thin layers with a root-mean-square roughness of 2.15 nm. On-axis X-ray ω-scan rocking curves showed enhanced crystalline quality: the full width at half maximum decreased from 1224 to 756 arcsec along the [0001] direction and from 2628 to 1360 arcsec along the [1-100] direction for a-GaN grown with 120 pairs of AlN/GaN compared to a-GaN without AlN/GaN pairs. Reciprocal space mapping showed that a-plane GaN with a high number of AlN/GaN pairs exhibits near-relaxation strain states. Room-temperature photoluminescence spectra showed that the sample with the highest number of AlN/GaN pairs exhibited the lowest-intensity yellow and blue luminescence bands, indicating a reduction in defects and dislocations. The a-plane InGaN/GaN LEDs with 120 pairs of SSPM-L AlN/GaN exhibited a significant increase (~ 250%) in light output power compared to that of LEDs without SSPM-L AlN/GaN pairs.
In this study, low-bandgap polymer poly{[4,4-bis(2-ethylhexyl)-cyclopenta-(2,1-b;3,4-b')dithiophen]-2,6-diyl-alt-(2,1,3-benzothiadiazole)-4,7-diyl} (PCPDTBT) nanostructures have been synthesized via a hard nanoporous alumina template of centrifugal process. Centrifuge has been used to infiltrate the PCPDTBT solution into the nanoporous alumina by varying the rotational speeds. The rotational speed of centrifuge is directly proportional to the infiltration force that penetrates into the nanochannels of the template. By varying the rotational speed of centrifuge, different types of PCPDTBT nanostructures are procured. Infiltration force created during the centrifugal process has been found a dominant factor in tuning the morphological, optical, and structural properties of PCPDTBT nanostructures. The field emission scanning electron microscopy (FESEM) images proved the formation of nanotubes and nanowires. The energy-dispersive X-ray spectroscope (EDX) analysis showed that the nanostructures were composed of PCPDTBT with complete dissolution of the template.
In this work, we presented experimental observation on solution-processed bulk heterojunction organic photodiode using vanadyl 2,11,20,29-tetra tert-butyl 2,3 naphthalocyanine (VTTBNc) as a p-type material. VTTBNc is blended with two different acceptors, which are PC61BM and PC71BM, to offer further understanding in evaluating the performance in organic photodiode (OPD). The blend film of VTTBNc:PC71BM with a volumetric ratio of 1:1 exhibits optimized performance in the VTTBNc blend structure with 2.31 × 109 Jones detectivity and 26.11 mA/W responsivity at a -1 V bias. The response and recovery time of VTTBNc:PC71BM were recorded as 241 ms and 310 ms, respectively. The light absorption measurement demonstrated that VTTBNc could extend the light absorption to the near-infrared (NIR) region. The detail of the enhancement of the performance by adding VTTBNc to the blend was further explained in the discussion section.