Bottom-contact pentacene OTFTs are fabricated using cross-linked poly(vinyl alcohol) (PVA) insulator and its reliability characteristics are analyzed. The hysteresis of the OTFTs is mainly caused by the electrons that are injected from the gate electrode to the cross-linked PVA insulator. To block the injection of electrons, plasma-enhanced chemical vapor deposition (PECVD) SiO2 layer is inserted between the gate electrode and the cross-linked PVA layer, so that the minimum hysteresis can be obtained. In addition, the effects of the gate bias stress as a function of time is investigated to examine the long-term reliability of the device during the operation.