Affiliations 

  • 1 Institute of Electronics, Atomic Energy Research Establishment, Bangladesh Atomic Energy Commission, Dhaka, 1349, Bangladesh. khalid.baec@gmail.com
  • 2 School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ, 85281, USA
  • 3 Department of Electrical and Electronic Engineering, Islamic University, Kushtia, 7000, Bangladesh
  • 4 Centre for Research Impact & Outcome, Chitkara University Institute of Engineering and Technology, Chitkara University, Rajpura, Punjab, 140401, India. prabhu.paramasivam@meu.edu.et
  • 5 Management and Science University, Shah Alam, Selangor, Malaysia
  • 6 Chemistry Department, College of Science, King Saud University, Riyadh, 11451, Saudi Arabia
  • 7 School of Chemical Engineering, Yeungnam University, Gyeongsan, 38541, Republic of Korea. mishravlm30@gmail.com
  • 8 School of Chemical Engineering, Yeungnam University, Gyeongsan, 38541, Republic of Korea. rajeshhaldhar.lpu@gmail.com
Sci Rep, 2024 Dec 03;14(1):30142.
PMID: 39627336 DOI: 10.1038/s41598-024-81797-x

Abstract

In this work, CsPb.625Zn.375IBr2-based perovskite solar cells (PSCs) are numerically simulated and optimized under ideal lighting conditions using the SCAPS-1D simulator. We investigate how various hole transport layers (HTL) including Zn3P2, PTAA, MoS2, MoO3, MEH-PPV, GaAs, CuAlO2, Cu2Te, ZnTe, MoTe2, CMTS, CNTS, CZTS, CZTSe and electron transport layers (ETL) such as CdS, SnS2, ZnSe, PC60BM interact with the devices' functionality. Following HTL material optimization, a maximum power conversion efficiency (PCE) of 16.59% was observed for the FTO/SnS2/CsPb.625Zn.375IBr2/MoS2/Au structure, with MoS2 proving to be a more economical option. The remainder of the investigation is done following the HTL optimization. We study how the performance of the PSC is affected by varying the materials of the ETL and to improve the PCE of the device, we finally optimized the thickness, charge carrier densities, and defect densities of the absorber, ETL, and HTL. In the end, the optimized arrangement produced a VOC of 0.583 V, a JSC of 43.95 mA/cm2, an FF of 82.17%, and a PCE of 21.05% for the FTO/ZnSe/CsPb.625Zn.375IBr2/MoS2/Au structure. We also examine the effects of temperature, shunt resistance, series resistance, generation rate, recombination rate, current-voltage (JV) curve, and quantum efficiency (QE) properties to learn more about the performance of the optimized device. At 300 K, the optimized device provides the highest thermal stability. Our research shows the promise of CsPb.625Zn.375IBr2-based PSCs and offers insightful information for further development and improvement.

* Title and MeSH Headings from MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine.