Vertical MoS2on SiO2/Si and Graphene: Effect of Surface Morphology on Photoelectrochemical Properties

Two-dimensional materials have attracted intensive attention recently due to their unique optical and electronic properties and their promising applications in water splitting and solar cells. As a representative layer-structured of transition metal dichalcogenides, MoS2has attracted considerable devotion owing to its exceptional photo and electro properties. Here, we show that the chemical vapour deposition (CVD) growth of MoS2on Si photocathode and graphene/Si photocathode can be used to prepare photoelectrocatalysts for water splitting. We explore a bottom-up method to grow vertical heterostructures of MoS2and graphene by using the two-step CVD. Graphene is first grown through ambient-pressure CVD on a Cu substrate and then transferred onto SiO2/Si substrate by using the chemical wet transfer followed by the second CVD method to grow MoS2over the graphene/SiO2/Si. The effect of the growth temperatures of MoS2is studied, and the optimum temperature is 800 °C. The MoS2produced at 800 °C has the highest photocurrent density at -0.23 mA cm-2in 0.5 M Na2SO4and -0.51 mA cm-2in 0.5 M H2SO4at -0.8 V vs. Ag/AgCl. The linear sweep voltammetry shows that MoS2in 0.5 M H2SO4has about 55% higher photocurrent density than MoS2in Na2SO4due to the higher protons (H+) in the H2SO4electrolyte solution, which are sufficiently charged to reduce to H2and, therefore hydrogen evolves more rapidly where the photocurrent density and hydrogen generation can be enhanced. MoS2/graphene/SiO2/Si (MGS) has -0.07 mA cm-2at -0.8 V vs. Ag/AgCl of photocurrent density, which is 70% lower than that of bare MoS2because MGS is thicker compared with MoS2. Thus, MoS2has potential as a photocatalyst in photoelectrochemical water splitting. The structure and the morphology of MoS2play an important role in determining the photocurrent performance.