Natural fibre-based materials are gaining popularity in the composites industry, particularly for automotive structural and semi-structural applications, considering the growing interest and awareness towards sustainable product design. Surface treatment and nanofiller addition have become one of the most important aspects of improving natural fibre reinforced polymer composite performance. The novelty of this work is to examine the combined effect of fibre surface treatment with Alumina (Al2O3) and Magnesia (MgO) nanofillers on the mechanical (tensile, flexural, and impact) behaviour of biotex flax/PLA fibre reinforced epoxy hybrid nanocomposites. Al2O3 and MgO with a particle size of 50 nm were added in various weight proportions to the epoxy and flax/PLA fibre, and the composite laminates were formed using the vacuum bagging technique. The surface treatment of one set of fibres with a 5% NaOH solution was investigated for its effect on mechanical performance. The results indicate that the surface-treated reinforcement showed superior tensile, flexural, and impact properties compared to the untreated reinforcement. The addition of 3 wt. % nanofiller resulted in the best mechanical properties. SEM morphological images demonstrate various defects, including interfacial behaviour, fibre breakage, fibre pullout, voids, cracks, and agglomeration.
We report the crystallization of electrodeposited germanium (Ge) thin films on n-silicon (Si) (100) by rapid melting process. The electrodeposition was carried out in germanium (IV) chloride: propylene glycol (GeCl₄:C₃H₈O₂) electrolyte with constant current of 50 mA for 30 min. The measured Raman spectra and electron backscattering diffraction (EBSD) images show that the as-deposited Ge thin film was amorphous. The crystallization of deposited Ge was achieved by rapid thermal annealing (RTA) at 980 °C for 1 s. The EBSD images confirm that the orientations of the annealed Ge are similar to that of the Si substrate. The highly intense peak of Raman spectra at 300 cm(-1) corresponding to Ge-Ge vibration mode was observed, indicating good crystal quality of Ge. An additional sub peak near to 390 cm(-1) corresponding to the Si-Ge vibration mode was also observed, indicating the Ge-Si mixing at Ge/Si interface. Auger electron spectroscopy (AES) reveals that the intermixing depth was around 60 nm. The calculated Si fraction from Raman spectra was found to be in good agreement with the value estimated from Ge-Si equilibrium phase diagram. The proposed technique is expected to be an effective way to crystallize Ge films for various device applications as well as to create strain at the Ge-Si interface for enhancement of mobility.
The effects of annealing temperatures on composition and strain in Si x Ge1-x, obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 °C for 1 s. All annealed samples show single crystalline structure in (100) orientation. A significant appearance of Si-Ge vibration mode peak at ~400 cm-1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of Si x Ge1-x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance.