High demand of semiconductor gas sensor works at low operating temperature to as low as 100 °C has led to the fabrication of gas sensor based on TiO₂ nanoparticles. A sensing film of gas sensor was prepared by mixing the sensing material, TiO₂ (P25) and glass powder, and B₂O₃ with organic binder. The sensing film was annealed at temperature of 500 °C in 30 min. The morphological and structural properties of the sensing film were characterized by field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD). The gas sensor was exposed to hydrogen with concentration of 100⁻1000 ppm and was tested at different operating temperatures which are 100 °C, 200 °C, and 300 °C to find the optimum operating temperature for producing the highest sensitivity. The gas sensor exhibited p-type conductivity based on decreased current when exposed to hydrogen. The gas sensor showed capability in sensing low concentration of hydrogen to as low as 100 ppm at 100 °C.
Microwave absorption properties were systematically studied for double-layer carbon black/epoxy resin (CB) and Ni0.6Zn0.4Fe2O4/epoxy resin (F) nanocomposites in the frequency range of 8 to 18 GHz. The Ni0.6Zn0.4Fe2O4 nanoparticles were synthesized via high energy ball milling with subsequent sintering while carbon black was commercially purchased. The materials were later incorporated into epoxy resin to fabricate double-layer composite structures with total thicknesses of 2 and 3 mm. The CB1/F1, in which carbon black as matching and ferrite as absorbing layer with each thickness of 1 mm, showed the highest microwave absorption of more than 99.9%, with minimum reflection loss of -33.8 dB but with an absorption bandwidth of only 2.7 GHz. Double layer absorbers with F1/CB1(ferrite as matching and carbon black as absorbing layer with each thickness of 1 mm) structure showed the best microwave absorption performance in which more than 99% microwave energy were absorbed, with promising minimum reflection loss of -24.0 dB, along with a wider bandwidth of 4.8 GHz and yet with a reduced thickness of only 2 mm.