Atomic force microscopes (AFM) as one of the scanning probe microscopy (spm) modes have become useful tools, not only for observing surface morphology and nanostructure topography but also for fabrication of various nanostructures itself. In this work, silicon oxide (SiOx) patterns were formed on Si(100) surface by means of AFM anodization, where a non-contact mode used to oxidize Si wafer at the nanoscale size. The oxide patterns could serve as masks for the chemical etching of Si surface in alkaline solution in order to create the Si nanodots. A special attention is paid to finding relations between the size of dots and operational parameters as tip bias voltage and tip writing speed Dot arrays with 10 nm high and less than 50 nm in diameter have been successfully fabricated. The ability to control oxidation and scanning speed can be utilized in fabrication of complex nanostructures and make scanning probe lithography (SPL) as a very promising lithographic technique in nanoelectronic devices, nanophotonics and other high-tech areas.
P-type transparent conductive oxide of copper aluminum oxide (CuAlO2) thin films were prepared by using sol-gel method with nitrate solutions as starting precursor. Copper nitrate and aluminum nitrate were selected as raw materials that provide the copper and aluminum source. The CuAlO2 thin films were deposited on pre-cleaned silicon substrate by spin-coating technique. To study of phase formation of CuAlO2, as prepared sample was dried and subjected to heat treatment at various temperatures. The heat-treated samples were characterized by x-ray diffraction (XRD) and energy dispersive x-ray (EDX). From XRD analysis result found that CuAlO2 phase was formed after annealing at 1100 o C for 4 hrs. EDX result of annealed sample at 1100 o C shows composition of Cu and Al that indicate the possibility of forming CuAlO2.