Graphene and its hybrids are being employed as potential materials in light-sensing devices due to their high optical and electronic properties. However, the absence of a bandgap in graphene limits the realization of devices with high performance. In this work, a boron-doped reduced graphene oxide (B-rGO) is proposed to overcome the above problems. Boron doping enhances the conductivity of graphene oxide and creates several defect sites during the reduction process, which can play a vital role in achieving high-sensing performance of light-sensing devices. Initially, the B-rGO is synthesized using a modified microwave-assisted hydrothermal method and later analyzed using standard FESEM, FTIR, XPS, Raman, and XRD techniques. The content of boron in doped rGO was found to be 6.51 at.%. The B-rGO showed a tunable optical bandgap from 2.91 to 3.05 eV in the visible spectrum with an electrical conductivity of 0.816 S/cm. The optical constants obtained from UV-Vis absorption spectra suggested an enhanced surface plasmon resonance (SPR) response for B-rGO in the theoretical study, which was further verified by experimental investigations. The B-rGO with tunable bandgap and enhanced SPR could open up the solution for future high-performance optoelectronic and sensing applications.
Dye-Sensitized Solar Cells (DSSCs) have attracted great attention due to environmentally friendly low-cost processing, excellent working ability in diffuse light, and potential to meet the power demands of future buildings due the true class of building integrated photovoltaics (BIPV). Nevertheless, DSSCs have relatively low photoconversion efficiency (PCE) due to multiple issues. Several strategies have been employed to enhance its PCE. For instance, bi-layered structure of photoelectrode i.e., mesoporous TiO2 transparent layer with top scattering layer was introduced which scatter light inside on large angles improves the harvesting ability of photoelectrode thus enhanced PCE. However, scattering layer is composed of aggregated small particles which offer sluggish electron transport due to multiple grain boundaries, consequently, unwanted recombination reaction which leads to poor PCE. This issue has been addressed for transparent layer immensely but ignored for scattering layer. Mostly for scattering layer in previous studies novel structures have been proposed to enhance scattering properties and dye adsorption only. Therefore, in this study for the first time presenting dual functional graphene/TiO2 scattering layer in which solvent exfoliated graphene is incorporated in TiO2 submicron spheres which enhanced electron transport properties, while submicron spheres scatter light effectively. Scattering and electron transport characteristics of DSSCs are thoroughly investigated with the function of graphene loading. Electrochemical impedance spectroscopy (EIS) has revealed that diffusion coefficient length and coefficient and conductivity attained maximum value at 0.01 wt%. while other important parameters such as electron lifetime and electron density in conduction band have been improved till 0.020 wt% graphene loading. However, results indicated that with 0.01 w% graphene 33% higher PCE was achieved than without scattering layer and 13% higher than scattering layer without graphene. The depraving in PCE at >0.01 wt% graphene despite of excellent electron transport improvement is attributed to the loss of diffuse reflectance and higher optical absorption by graphene.