InP-InxGa1-xAs core-multi-shell nanowire quantum wells with tunable emission in the 1.3-1.55 μm wavelength range

Fonseka HA 1 , Ameruddin AS 2 , Caroff P 1 , Tedeschi D 3 , De Luca M 3 , Mura F 4 Show all authors , Guo Y 1 , Lysevych M 5 , Wang F 1 , Tan HH 1 , Polimeni A 3 , Jagadish C 1

Affiliations 

  • 1 Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 2601, Australia. a.fonseka.1@warwick.ac.uk CaroffP@cardiff.ac.uk
  • 2 Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 2601, Australia. a.fonseka.1@warwick.ac.uk CaroffP@cardiff.ac.uk and Faculty of Science, Technology and Human Development, Universiti Tun Hussein Onn Malaysia, Parit Raja, 86400, Batu Pahat, Johor, Malaysia
  • 3 Dipartimento di Fisica and CNISM, Sapienza Università di Roma, Piazzale A. Moro 2, 00185 Roma, Italy
  • 4 Dipartimento di Scienze di Base e Applicate per l'Ingegneria, Sapienza Università di Roma, Via Scarpa 16, 00185 Roma, Italy
  • 5 Australian National Fabrication Facility, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 2601, Australia
Nanoscale, 2017 Sep 21;9(36):13554-13562.
PMID: 28872181 DOI: 10.1039/c7nr04598k

Abstract

The usability and tunability of the essential InP-InGaAs material combination in nanowire-based quantum wells (QWs) are assessed. The wurtzite phase core-multi-shell InP-InGaAs-InP nanowire QWs are characterised using cross-section transmission electron microscopy and photoluminescence measurements. The InP-InGaAs direct interface is found to be sharp while the InGaAs-InP inverted interface is more diffused, in agreement with their planar counterpart. Bright emission is observed from the single nanowires containing the QWs at room temperature, with no emission from the InP core or outer barrier. The tunability of the QW emission wavelength in the 1.3-1.55 μm communication wavelength range is demonstrated by varying the QW thickness and in the 1.3 μm range by varying the composition. The experiments are supported by simulation of the emission wavelength of the wurtzite phase InP-InGaAs QWs in the thickness range considered. The radial heterostructure is further extended to design multiple QWs with bright emission, therefore establishing the capability of this material system for nanowire based optical devices for communication applications.

* Title and MeSH Headings from MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine.

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