Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates

Li H; Khoury M; Bonef B; Alhassan AI; Mughal AJ; Azimah E; Samsudin MEA; De Mierry P; Nakamura S; Speck JS; DenBaars SP

doi:10.1021/acsami.7b11718

Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates

Li H ¹ , Khoury M ¹ , Bonef B ¹ , Alhassan AI ¹ , Mughal AJ ¹ , Azimah E ¹ Show all authors , Samsudin MEA ¹ , De Mierry P ² , Nakamura S ¹ , Speck JS ¹ , DenBaars SP ¹

Affiliations

¹ Materials Department, University of California , Santa Barbara, California 93106, United States
² CNRS-CRHEA , Rue Bernard Grégory, 06560 Valbonne, France

ACS Appl Mater Interfaces, 2017 Oct 18;9(41):36417-36422.

PMID: 28960058 DOI: 10.1021/acsami.7b11718

Abstract

We demonstrate efficient semipolar (11-22) 550 nm yellow/green InGaN light-emitting diodes (LEDs) with In0.03Ga0.97N barriers on low defect density (11-22) GaN/patterned sapphire templates. The In0.03Ga0.97N barriers were clearly identified, and no InGaN clusters were observed by atom probe tomography measurements. The semipolar (11-22) 550 nm InGaN LEDs (0.1 mm2 size) show an output power of 2.4 mW at 100 mA and a peak external quantum efficiency of 1.3% with a low efficiency drop. In addition, the LEDs exhibit a small blue-shift of only 11 nm as injection current increases from 5 to 100 mA. These results suggest the potential to produce high efficiency semipolar InGaN LEDs with long emission wavelength on large-area sapphire substrates with economical feasibility.

* Title and MeSH Headings from MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine.