Negative bias temperature instability (NBTI) is a common phenomenon in a p-channel MOSFET device
under a negative gate-to-source voltage at a high stress temperature. This paper presents the NBTI
characterisation based on different analysis methods and stress conditions on p-MOSFET devices. The
atomic hydrogen concentration is probed at interface, Poly-Si and channel of p-MOSFET under study
using SILVACO TCAD tool. In addition, the behaviour of the permanent and recoverable component
was investigated based on AC stress at different stress conditions using Modelling Interface Generation
(MIG) tool. The results show that increases in temperature, negative voltage stress gate and decreases
in frequency increase the threshold voltage shift, thus enhancing NBTI degradation.