Wireless communication is a technology that plays an important role in current technology transformation. wireless communication is a method of telecommunication that are available for transmitting large amounts of data, voice and video over long distance using different frequencies. Specifically, Low Noise Amplifier which is located at the first block of receiver system, makes it one of the important element in improving signal transmission. This study was aimed to design a microwave Low Noise Amplifier for Long Term Evolution (LTE) application that will work at 5.8 GHz using high-performance low noise superHEMT transistor FHX76LP manufactured by Eudyna Technologies. The low noise amplifier (LNA) produced gain of 17.2 dB and noise figure (NF) of 0.914 dB. The input reflection (S11) and output return loss (S22) are -17.8 dB and -19.6 dB respectively. The bandwidth of the amplifier recorded is 1.2 GHz. The input sensitivity is compliant with the Long Term Evolution (LTE) standards.