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Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications

Wang C 1 , Chen YC 2 , Hsu HT 3 , Tsao YF 3 , Lin YC 1 , Dee CF 4 Show all authors , Chang EY 1

Affiliations 

  • 1 Department of Material Science Engineering, National Yang Ming Chiao Tung University, 1001 Tah Hsueh Road, Hsinchu 30010, Taiwan
  • 2 Department of Electrical Engineering, National Yang Ming Chiao Tung University, 1001 Tah Hsueh Road, Hsinchu 30010, Taiwan
  • 3 International College of Semiconductor Technology, National Yang Ming Chiao Tung University, 1001 Tah Hsueh Road, Hsinchu 30010, Taiwan
  • 4 Institute of Microengineering and Nanoelectronics (IMEN) Level 4, Research Complex, University Kebangsaan Malaysia, Bangi 43600, Malaysia
Materials (Basel), 2021 Nov 01;14(21).
PMID: 34772078 DOI: 10.3390/ma14216558

Abstract

In this work, a low-power plasma oxidation surface treatment followed by Al2O3 gate dielectric deposition technique is adopted to improve device performance of the enhancement-mode (E-mode) AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) intended for applications at millimeter-wave frequencies. The fabricated device exhibited a threshold voltage (Vth) of 0.13 V and a maximum transconductance (gm) of 484 (mS/mm). At 38 GHz, an output power density of 3.22 W/mm with a power-added efficiency (PAE) of 34.83% were achieved. Such superior performance was mainly attributed to the high-quality Al2O3 layer with a smooth surface which also suppressed the current collapse phenomenon.

* Title and MeSH Headings from MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine.

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