Affiliations 

  • 1 King Abdullah Institute for Nanotechnology, King Saud University, Riyadh 11451, Saudi Arabia
  • 2 Nano- Optoelectronic Laboratory, Institute of Engineering Research and Materials Technology (IERMT), National Center for Research, Khartoum- Sudan
  • 3 Nano-Optoelectronics Research and Technology Laboratory, School of Physics Universiti Sains Malaysia, 11800 Penang, Malaysia
  • 4 Department of Chemistry, GC University Lahore, 54000 Lahore, Pakistan
Sci Rep, 2016;6:32431.
PMID: 27600023 DOI: 10.1038/srep32431

Abstract

We report growth of quaternary Cu2 ZnSnS4 (CZTS) thin films prepared by the electrochemical deposition from salt precursors containing Cu (II), Zn (II) and Sn (IV) metals. The influence of different sulfurization times t (t = 75, 90, 105, and 120 min) on the structural, compositional, morphological, and optical properties, as well as on the electrical properties is studied. The films sulfurized 2 hours showed a prominent kesterite phase with a nearly stoichiometric composition. Samples were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), and Raman and UV-VIS-NIR spectrometer at different stages of work. X-ray diffraction and Raman spectroscopy analyses confirmed the formation of phase-pure CZTS films. (FESEM) shows that compact and dense morphology and enhanced photo-sensitivity. STEM - EDS elemental map of CZTS cross-section confirms homogeneous distribution. From optical study, energy gap was enlarged with a changed sulfurization times in the range of 1.37-1.47 eV.

* Title and MeSH Headings from MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine.