The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters against those of a metal-oxide-semiconductor field-effect transistor (MOSFET). Both CNT and MOSFET models considered agree well with the trends in the available experimental data. The results obtained show that nanotubes can significantly reduce the drain-induced barrier lowering effect and subthreshold swing in silicon channel replacement while sustaining smaller channel area at higher current density. Performance metrics of both devices such as current drive strength, current on-off ratio (Ion/Ioff), energy-delay product, and power-delay product for logic gates, namely NAND and NOR, are presented. Design rules used for carbon nanotube field-effect transistors (CNTFETs) are compatible with the 45-nm MOSFET technology. The parasitics associated with interconnects are also incorporated in the model. Interconnects can affect the propagation delay in a CNTFET. Smaller length interconnects result in higher cutoff frequency.
Photocatalysts provide excellent potential for the full removal of organic chemical pollutants as an environmentally friendly technology. It has been noted that under UV-visible light irradiation, nanostructured semiconductor metal oxides photocatalysts can degrade different organic pollutants. The Sn6SiO8/rGO nanocomposite was synthesized by a hydrothermal method. The Sn6SiO8 nanoparticles hexagonal phase was confirmed by XRD and functional groups were analyzed by FT-IR spectroscopy. The bandgap of Sn6SiO8 nanoparticles (NPs) and Sn6SiO8/GO composites were found to be 2.7 eV and 2.5 eV, respectively. SEM images of samples showed that the flakes like morphology. This Sn6SiO8/rGO nanocomposite was testing for photocatalytic dye degradation of MG under visible light illumination and excellent response for the catalysts. The enhancement of photocatalytic performance was mainly attributed to the increased light absorption, charge separation efficiency and specific surface area, proved by UV-vis DRS. Further, the radical trapping experiments revealed that holes (h+) and superoxide radicals (·O-₂) were the main active species for the degradation of MG, and a possible photocatalytic mechanism was discussed.
Since a few centuries ago, organochlorine compounds (OCs) become one of the threatened contaminants in the world. Due to the lipophilic and hydrophobic properties, OCs always discover in fat or lipid layers through bioaccumulation and biomagnification. The OCs are able to retain in soil, sediment and water for long time as it is volatile, OCs will evaporate from soil and condense in water easily and frequently, which pollute the shelter of aquatic life and it affects the function of organs and damage system in human body. Photocatalysis that employs the usage of semiconductor nanophotocatalyst and solar energy can be the possible alternative for current conventional water remediation technologies. With the benefits of utilizing renewable energy, no production of harmful by-products and easy operation, degradation of organic pollutants in rural water bodies can be established. Besides, nanophotocatalyst that is synthesized with nanotechnology outnumbered conventional catalyst with larger surface area to volume ratio, thus higher photocatalytic activity is observed. In contrast, disadvantages particularly no residual effect in water distribution network, requirement of post-treatment and easily affected by various factors accompanied with photocatalysis method cannot be ignored. These various factors constrained the photocatalytic efficiency via nanocatalysts which causes the full capacity of solar photocatalysis has yet to be put into practice. Therefore, further modifications and research are still required in nanophotocatalysts' synthesis to overcome limitations such as large band gaps and photodecontamination.
We demonstrate a multi-wavelength light source using a semiconductor optical amplifier (SOA) in conjunction with an array waveguide grating (AWG). The experimental results showed more than 20 channels with a wavelength separation of 0.8 nm and an optical signal-to-noise ratio of more than 10 dB under room temperature. The channels operated at the wavelength region from 1530.4 nm to 1548.6 nm, which corresponded to AWG filtering wavelengths with SOA drive current of 350 mA. The proposed light source had the advantages of a simple and compact structure, multi-wavelength operation and the system could be upgraded to generate more wavelengths.
Objective. Limited models are available to predict work-relatedness of musculoskeletal disorders (MSDs) among semiconductor back-end workers. This study aims to develop a model to predict the MSDs development among back-end workers. Method. Potential MSD risk factors were extracted from 277 work compensation investigation reports conducted between 2011-2019. Binary logistic regression approach was used to determine significant predictors. Results. Significant predictors (p
The existence of surface organic capping ligands on quantum dots (QDs) has limited the potential in QDs emission properties and energy band gap structure alteration as well as the carrier localization. This drawback can be addressed via depositing a thin layer of a semiconductor material on the surface of QDs. Herein, we report on the comparative study for photoluminescent (PL) properties of PbS and PbS/MnS QDs. The carrier localization effect due to the alteration of energy band gap structure and carrier recombination mechanism in the QDs were investigated via PL measurements in a temperature range of 10-300 K with the variation of the excitation power from 10 to 200 mW. For PbS QDs, the gradient of integrated PL intensity (IPL) as a function of excitation power density graph was less than unity. When the MnS shell layer was deposited onto the PbS core, the PL emission exhibited a blue shift, showing dominant carrier recombination. It was also found that the full width half-maximum showed a gradual broadening with the increasing temperature, affirming the electron-phonon interaction.
The most sensitive part of a metal-oxide-semiconductor (MOS) structure to ionizing radiation is the
oxide insulating layer. When ionizing radiation passes through the oxide, the energy deposited creates
electron/hole pairs. Oxide trapped charge causes a negative shift in capacitance-voltage (C-V)
characteristics. These changes are the results of, firstly, incre using trapped positive charge in the
oxide, which causes a parallel shift of the curve to more negative voltages, and secondly, increasing
interface trap density, which causes the curve to stretch-out.
High demand of semiconductor gas sensor works at low operating temperature to as low as 100 °C has led to the fabrication of gas sensor based on TiO₂ nanoparticles. A sensing film of gas sensor was prepared by mixing the sensing material, TiO₂ (P25) and glass powder, and B₂O₃ with organic binder. The sensing film was annealed at temperature of 500 °C in 30 min. The morphological and structural properties of the sensing film were characterized by field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD). The gas sensor was exposed to hydrogen with concentration of 100⁻1000 ppm and was tested at different operating temperatures which are 100 °C, 200 °C, and 300 °C to find the optimum operating temperature for producing the highest sensitivity. The gas sensor exhibited p-type conductivity based on decreased current when exposed to hydrogen. The gas sensor showed capability in sensing low concentration of hydrogen to as low as 100 ppm at 100 °C.