Continuing trend in silicon wafer thickness directed at cost reduction approaches basic boundaries created by: (a) mismatch between Al paste and Si wafer thermal expansion and (b) incomplete optical absorption. With its symmetrical front and back electrical contacts, the bifacial solar cell setup reduces stress due to mismatch thermal expansion, decreases metal use and increases high temperature efficiency. Efficiency improvement is accomplished in bifacial solar cells by capturing light from the back surface. Partially transparent wafers provide an option to improve near-infrared radiation absorption within Si wafer. To fully absorb optical radiation, three-dimensional texture of these kinds of wafers is essential. Pulsed laser interactions, thermal oxidation, and wet chemical etching are included in this research. A feature of its energy and pattern setup is the interaction of pulsed laser with Si, running at 1.064 μm wavelength and micro-second length. Two experimental settings were explored: (a) post-laser chemical etching with potassium hydro-oxide etching with thermal oxide as etching mask and (b) post-laser heat Si surface oxidation. Due to fast melting and recrystallization, laser pulsed processing inherently produces its own texture. Some of these spherically-shaped, randomly focused characteristics improve inner scattering and boost near-infrared absorption within the wafer. These characteristics are separated during chemical etching with the thermally-grown oxide layer as an etch mask. Comparison of optical absorption in both surfaces shows almost a rise in the magnitude of absorption in non-etched surfaces. Detailed optical (optical microscope and IR absorption), morphological (field emission scanning electron microscope) and heat imaging (far IR camera) analyses were performed to comprehend physical processes that contribute to near-IR absorption improvement. Such kinds of partially-transparent, three-dimensional textured Si wafers are anticipated to discover applications for bifacial solar cells as substrates.
The obstacle to the industrialization of perovskite solar cells (PSC) technology lies in their stability. This work rationalizes the PSC design with the employment of 2D-MoS2 as the hybrid hole transport layer (HTL). MoS2 was selected due to its unique optoelectronic and mechanical properties that could enhance hole extraction and thus boost the performance and stability of PSC devices. Five concentrations indicated MoS2 nanosheets were directly deposited onto the perovskite layer via the facile spin coating method. The electrochemical exfoliation and liquid exchange methods were demonstrated to obtain the lateral size of MoS2 nanosheets and further discussed their microscopic and spectroscopic characterizations. Remarkably, the optimum thickness and the excellent device increased the stability of the PSC, allowing it to maintain 45% of its degradation percentage ([Formula: see text]) for 120 h with high relative humidity (RH = 40-50%) in its vicinity. We observed that lithium-ion can intercalate into the layered MoS2 structure and reduce the interfacial resistance of perovskite and the HTL. Most importantly, the 2D-MoS2 mechanism's effect on enabling stable and efficient devices by reducing lithium-ion migration in the HTL is demonstrated in this work to validate the great potential of this hybrid structure in PSC applications.
The unprecedented development of perovskite-silicon (PSC-Si) tandem solar cells in the last five years has been hindered by several challenges towards industrialization, which require further research. The combination of the low cost of perovskite and legacy silicon solar cells serve as primary drivers for PSC-Si tandem solar cell improvement. For the perovskite top-cell, the utmost concern reported in the literature is perovskite instability. Hence, proposed physical loss mechanisms for intrinsic and extrinsic instability as triggering mechanisms for hysteresis, ion segregation, and trap states, along with the latest proposed mitigation strategies in terms of stability engineering, are discussed. The silicon bottom cell, being a mature technology, is currently facing bottleneck challenges to achieve power conversion efficiencies (PCE) greater than 26.7%, which requires more understanding in the context of light management and passivation technologies. Finally, for large-scale industrialization of the PSC-Si tandem solar cell, the promising silicon wafer thinning, and large-scale film deposition technologies could cause a shift and align with a more affordable and flexible roll-to-roll PSC-Si technology. Therefore, this review aims to provide deliberate guidance on critical fundamental issues and configuration factors in current PSC-Si tandem technologies towards large-scale industrialization. to meet the 2031 PSC-Si Tandem road maps market target.
Significant progress has been made over the years to improve the stability and efficiency of rapidly evolving tin-based perovskite solar cells (PSCs). One powerful approach to enhance the performance of these PSCs is through compositional engineering techniques, specifically by incorporating a mixed cation system at the A-site and B-site structure of the tin perovskite. These approaches will pave the way for unlocking the full potential of tin-based PSCs. Therefore, in this study, a theoretical investigation of mixed A-cations (FA, MA, EA, Cs) with a tin-germanium-based PSC was presented. The crystal structure distortion and optoelectronic properties were estimated. SCAPS 1-D simulations were employed to predict the photovoltaic performance of the optimized tin-germanium material using different electron transport layers (ETLs), hole transport layers (HTLs), active layer thicknesses, and cell temperatures. Our findings reveal that EA0.5Cs0.5Sn0.5Ge0.5I3 has a nearly cubic structure (t = 0.99) and a theoretical bandgap within the maximum Shockley-Queisser limit (1.34 eV). The overall cell performance is also improved by optimizing the perovskite layer thickness to 1200 nm, and it exhibits remarkable stability as the temperature increases. The short-circuit current density (Jsc) remains consistent around 33.7 mA/cm2, and the open-circuit voltage (Voc) is well-maintained above 1 V by utilizing FTO as the conductive layer, ZnO as the ETL, Cu2O as the HTL, and Au as the metal back contact. This configuration also achieves a high fill factor ranging from 87 % to 88 %, with the highest power conversion efficiency (PCE) of 31.49 % at 293 K. This research contributes to the advancement of tin-germanium perovskite materials for a wide range of optoelectronic applications.