Affiliations 

  • 1 Institute of High Voltage and High Current, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Johor Bahru, Malaysia. mahmoudy.phy@gmail.com
  • 2 Institute of High Voltage and High Current, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Johor Bahru, Malaysia. zulkurnain@utm.my
  • 3 Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, Kuala Lumpur 50603, Malaysia. smb137@yahoo.com
Sensors (Basel), 2014;14(10):19229-41.
PMID: 25320908 DOI: 10.3390/s141019229

Abstract

The fabrication of Metal-DNA-Metal (MDM) structure-based high sensitivity sensors from DNA micro-and nanoarray strands is a key issue in their development. The tunable semiconducting response of DNA in the presence of external electromagnetic and thermal fields is a gift for molecular electronics. The impact of temperatures (25-55 °C) and magnetic fields (0-1200 mT) on the current-voltage (I-V) features of Au-DNA-Au (GDG) structures with an optimum gap of 10 μm is reported. The I-V characteristics acquired in the presence and absence of magnetic fields demonstrated the semiconducting diode nature of DNA in GDG structures with high temperature sensitivity. The saturation current in the absence of magnetic field was found to increase sharply with the increase of temperature up to 45 °C and decrease rapidly thereafter. This increase was attributed to the temperature-assisted conversion of double bonds into single bond in DNA structures. Furthermore, the potential barrier height and Richardson constant for all the structures increased steadily with the increase of external magnetic field irrespective of temperature variations. Our observation on magnetic field and temperature sensitivity of I-V response in GDG sandwiches may contribute towards the development of DNA-based magnetic sensors.

* Title and MeSH Headings from MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine.