A series of amorphous carbon nitride (a-CNx) thin films were deposited on silicon (111) substrates using a home-built
radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) system. The a-CNx thin films were deposited
from a mixture of a fixed flow-rate of ethane (C2
H6
, 20 sccm) and nitrogen (N2
, 47 sccm) gases with varying RF power. A
higher ratio of C to H (C to H ratio is 1:3) atoms in C2
H6
as compared to the ratio in methane (CH4
) gas (C to H ratio is
1:4) is expected to produce an interesting effect to the film properties as humidity sensor. The characterization techniques
used to determine the morphology and chemical bonding of the thin films are field emission scanning electron microscopy
(FESEM) and Fourier transform infrared spectroscopy (FTIR), respectively. The variation of morphology and the existence
of nitrile band in these samples are correlated with the electrical properties of a-CNx thin films. Using humidity sensing
system, the sensing performance of the samples was examined. It was found that the response of sensors towards the
percentage of relative humidity (% RH) change is good resistive responses and good repeatability. The sensitivity of the
prepared a-CNx thin films is significantly higher (up to 79%) as compared to previous studies using CH4
or acetylene as
precursor gas. Based on these results, the properties and the sensitivity of the a-CNx thin films towards humidity can be
tailored by using an appropriate precursor gases and deposition parameters.