Affiliations 

  • 1 Institute of Nanoscience and Nanotechnology (INN), National Center for Scientific Research (NCSR) Demokritos, 15341 Agia Paraskevi, Attica, Greece
  • 2 Electronic Materials Research Institute, Kolon Central Research Park, Mabuk-dong Yongin-si, Giheung-gu, Gyeonggi-do, South Korea
  • 3 Samsung Display Co. Ltd., #1 Samsung-ro, Giheung-gu, Yongin-si, Gyeonggi-do, 17113 South Korea
  • 4 Universidade Tecnologica Federal do Parana, GPGEI - Av. Sete de Setembro, 3165 - CEP 80230-901, Curitiba, Parana, Brazil
  • 5 Solar Energy Research Institute, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia
  • 6 Fujian Institute of Research on the Structure of Matter, Chinese Academy of Science, Fuzhu, Fujian 350002, China
  • 7 Department of Physics, Vivian Tower, Singleton Park, Swansea University, SA2 8PP Swansea, United Kingdom
  • 8 Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Rue de l'Industrie 17, CH-1951 Sion, Switzerland
Nano Lett., 2020 Jul 08;20(7):5081-5089.
PMID: 32492348 DOI: 10.1021/acs.nanolett.0c01270

Abstract

Here we use triple-cation metal-organic halide perovskite single crystals for the transistor channel of a flash memory device. Moreover, we design and demonstrate a 10 nm thick single-layer nanofloating gate. It consists of a ternary blend of two organic semiconductors, a p-type polyfluorene and an n-type fullerene that form a donor:acceptor interpenetrating network that serves as the charge storage unit, and of an insulating polystyrene that acts as the tunneling dielectric. Under such a framework, we realize the first non-volatile flash memory transistor based on a perovskite channel. This simplified, solution-processed perovskite flash memory displays unique performance metrics such as a large memory window of 30 V, an on/off ratio of 9 × 107, short write/erase times of 50 ms, and a satisfactory retention time exceeding 106 s. The realization of the first flash memory transistor using a single-crystal perovskite channel could be a valuable direction for perovskite electronics research.

* Title and MeSH Headings from MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine.