Silicon nanostructures have successfully been synthesized by thermal evaporation technique using nickel catalyst. Silicon powder served as starting source material was evaporated at high temperature (900-1100°C) in inert carrier gas. The grown silicon nanostructures were collected on (111) silicon substrate surface that positioned at varied location from source material. By controlling heating rate, gas flow rate, growth temperature and time, substrate position and location; to the optimum condition produced the best quality at silicon nanostructures. In this work, the best parameter to produce silicon nanostructures is system ramping up 1000°C at 20°C/min heating rate, N2 flow at 100ml/min; silicon needle-like one dimensional silicon nanostructures growth on vertically-positioned substrate located at 12cm from source material for 1 hour growth time. The effects of these parameters on the structures and physical of nanostructures were characterized by field emission scanning electron microscope and x-ray diffraction.