β-Gallium oxide (Ga2O3) has received intensive attention in the scientific community as a significant high-power switching semiconductor material because of its remarkable intrinsic physical characteristics and growth stability. This work reports the heteroepitaxial growth of the β-Ga2O3 ultrathin film on a sapphire substrate via mist chemical vapor deposition (CVD). This study used a simple solution-processed and nonvacuum mist CVD method to grow a heteroepitaxial β-Ga2O3 thin film at 700 °C using a Ga precursor and carrier gases such as argon and oxygen. Various characterization techniques were used to determine the properties of the thin film. Additionally, a computational study was performed to study the temperature distribution and different mist velocity profiles of the finite element mist CVD model. This simulation study is essential for investigating low to high mist velocities over the substrate and applying low velocity to carry out experimental work. XRD and AFM results show that the β-Ga2O3 thin film is grown on a sapphire substrate of polycrystalline nature with a smooth surface. HR-TEM measurement and UV-visible transmission spectrometry demonstrated heteroepitaxial β-Ga2O3 in an ultrathin film with a band gap of 4.8 eV.
Alpha (α)- and beta (β)-phase gallium oxide (Ga2O3), emerging as ultrawide-band gap semiconductors, have been paid a great deal of attention in optoelectronics and high-performance power semiconductor devices owing to their ultrawide band gap ranging from 4.4 to 5.3 eV. The hot-wall mist chemical vapor deposition (mist-CVD) method has been shown to be effective for the growth of pure α- and β-phase Ga2O3 thin films on the α-Al2O3 substrate. However, challenges to preserve their intrinsic properties at a critical growth temperature for robust applications still remain a concern. Here, we report a convenient route to grow a mixed α- and β-phase Ga2O3 ultrathin film on the α-Al2O3 substrate via mist-CVD using a mixture of the gallium precursor and oxygen gas at growth temperatures, ranging from 470 to 700 °C. The influence of growth temperature on the film characteristics was systematically investigated. The results revealed that the as-grown Ga2O3 film possesses a mixed α- and β-phase with an average value of dislocation density of 1010 cm-2 for all growth temperatures, indicating a high lattice mismatch between the film and the substrate. At 600 °C, the ultrathin and smooth Ga2O3 film exhibited a good surface roughness of 1.84 nm and an excellent optical band gap of 5.2 eV. The results here suggest that the mixed α- and β-phase Ga2O3 ultrathin film can have great potential in developing future high-power electronic devices.
The presence of Ti3+ in the structure of TiO2 nanotube arrays (NTs) has been shown to enhance the photoelectrochemical (PEC) water-splitting performance of these NTs, leading to improved results compared to pristine anatase TiO2 NTs. To further improve the properties related to PEC performance, we successfully produced TiO2 NTs using a two-step electrochemical anodization technique, followed by annealing at a temperature of 450 °C. Subsequently, Mo2C was decorated onto the NTs by dip coating them with precursors at varying concentrations and times. The presence of anatase TiO2 and Ti3O5 phases within the TiO2 NTs was confirmed through X-ray diffraction (XRD) analysis. The TiO2 NTs that were decorated with Mo2C demonstrated a photocurrent density of approximately 1.4 mA cm-2, a value that is approximately five times greater than the photocurrent density exhibited by the bare TiO2 NTs, which was approximately 0.21 mA cm-2. The observed increase in photocurrent density can be ascribed to the incorporation of Mo2C as a cocatalyst, which significantly enhances the photocatalytic characteristics of the TiO2 NTs. The successful deposition of Mo2C onto the TiO2 NTs was further corroborated by the characterization techniques utilized. The utilization of field emission scanning electron microscopy (FESEM) allowed for the observation of Mo2C particles on the surface of TiO2 NTs. To validate the composition and optical characteristics of the decorated NTs, X-ray photoelectron spectroscopy (XPS) and UV absorbance analysis were performed. This study introduces a potentially effective method for developing efficient photoelectrodes based on TiO2 for environmentally sustainable hydrogen production through the use of photoelectrochemical water-splitting devices. The utilization of Mo2C as a cocatalyst on TiO2 NTs presents opportunities for the advancement of effective and environmentally friendly photoelectrochemical (PEC) systems.
Biosensors operating based on electrical methods are being accelerated toward rapid and efficient detection that improve the performance of the device. Continuous study in nano- and material-sciences has led to the inflection with properties of nanomaterials that fit the trend parallel to the biosensor evolution. Advancements in technology that focuses on nano-hybrid are being used to develop biosensors with better detection strategies. In this sense, titanium dioxide (TiO2) nanomaterials have attracted extensive interest in the construction of electrical biosensors. The formation of TiO2 nano-hybrid as an electrical transducing material has revealed good results with high performance. The modification of the sensing portion with a combination (nano-hybrid form) of nanomaterials has produced excellent sensors in terms of stability, reproducibility, and enhanced sensitivity. This review highlights recent research advancements with functional TiO2 nano-hybrid materials, and their victorious story in the construction of electrical biosensors are discussed. Future research directions with commercialization of these devices and their extensive utilizations are also discussed.
In the interest of the trend towards miniaturization of electronic gadgets, this study demonstrates a high-density data storage device with a very simple three-stacking layer consisting of only one charge trapping layer. A simple solution-processed technique has been used to fabricate the tristable non-volatile memory. The three-stacking layer was constructed in between two metals to form a two-terminal metal-insulator-metal structure. The fabricated device showed a large multilevel memory hysteresis window with a measured ON/OFF current ratio of 107 that might be attributed to the high charge trapped in molybdenum disulphide (MoS2) flakes-graphene quantum dots (GQDs) heterostructure. Transmission electron microscopy was performed to examine the orientation of MoS2-GQD and mixture dispersion preparation method. The obtained electrical data was used further to speculate the possible transport mechanisms through the fabricated device by a curve fitting technique. Also, endurance cycle and retention tests were performed at room temperature to investigate the stability of the device.
Investigation was made of the optical response of metal-dielectric stacks-based cavity structures embedded with graphene microheaters for the purpose of perfect absorption. The absorber configuration exploits the Ge2Sb2Te5 (GST) phase changing medium, and the effects of different parametric and operational conditions on the absorption spectra were explored. The refractive indices of GST layers can be manipulated by the external electrical pulses applied to microheaters. The amplitude and duration of electrical pulses define the crystallinity ratio of the used GST mediums. The results revealed achieving perfect absorption (> 99%) in the visible and infrared (IR) regimes of the electromagnetic spectrum upon incorporating two thin GST layers of different thicknesses (in the stack) in the amorphous state. The proposed configuration showed the capability of introducing independent transition state (amorphous and/or crystalline) for each GST layer-the visible regime could be extended to the IR regime, and the perfect absorption peak in the IR regime could be broadened and red-shifted. It is expected that the structure would find potential applications in active photonic devices, infrared imaging, detectors and tunable absorbers.
This paper reports the development of ZnO NRs/rGO-based photocatalysts integrated into a tree-branched polymer-based microfluidic reactor for efficient photodegradation of water contaminants. The reactor system includes a photocatalytic reactor, tree-branched microfluidic channels, and ZnO nanorods (NRs) coated with reduced graphene oxide (rGO) on a glass substrate within an area of 0.6 × 0.6 cm2. The ZnO NRs/rGO acts as a photocatalyst layer grown hydrothermally and then spray-coated with rGO. The microfluidic system is made of PDMS and fabricated using soft lithography (micro molding using SU-8 master mold patterned on a silicon wafer). The device geometry is designed using AutoCAD software and the flow properties of the microfluidics are simulated using COMSOL Multiphysics. The microfluidic platform's photocatalytic process aims to bring the nanostructured photocatalyst into very close proximity to the water flow channel, reducing the interaction time and providing effective purification performance. Our functionality test showed that a degradation efficiency of 23.12 %, within the effective residence time of less than 3 s was obtained.
Reports of pharmaceuticals exist in surface water and drinking water around the world, indicate they are ineffectively remove from water and wastewater using conventional treatment technologies. The potential of adverse effect of these pharmaceuticals on public health and aquatic life, also their continuos accumulation have raised the development of water treatment technologies. Hybrid treatment processes like membrane filtration and advance oxidation processes (AOPs) are likely to give rise to efficient simultaneous degradation and separation mechanisms. Conventional membrane filtration techniques can remove the majority of contaminants, but the smallest, undegraded, and stabilized pharmaceutical wastes persist in the treated water. After some 20 years, researchers have recognized the important role of AOPs in the treatment of pharmaceutical wastewater because these technologies are capable of oxidizing recalcitrant, toxic, and non-biodigradable compounds into numerous by-products and finally, inert end-products via the intermediacy of hydroxyl and other radicals. Evidently, membranes are subjected to the fouling phenomenon by the contaminants in wastewater, hence resulting in a reduction of clean water flux and increase in energy demand. In such situations, these membrane hybrid AOPs exert a complementary effect in the elimination of membrane fouling, thus enhancing the performance of the membrane. Therefore, in this review, we describe the basic aspects of the removal and transformation of certain pharmaceuticals via membranes and AOPs. In addition, information and evidences on membrane hybrid AOPs in the field of pharmaceutical wastewater treatment is also presented.
Two-dimensional materials have attracted intensive attention recently due to their unique optical and electronic properties and their promising applications in water splitting and solar cells. As a representative layer-structured of transition metal dichalcogenides, MoS2has attracted considerable devotion owing to its exceptional photo and electro properties. Here, we show that the chemical vapour deposition (CVD) growth of MoS2on Si photocathode and graphene/Si photocathode can be used to prepare photoelectrocatalysts for water splitting. We explore a bottom-up method to grow vertical heterostructures of MoS2and graphene by using the two-step CVD. Graphene is first grown through ambient-pressure CVD on a Cu substrate and then transferred onto SiO2/Si substrate by using the chemical wet transfer followed by the second CVD method to grow MoS2over the graphene/SiO2/Si. The effect of the growth temperatures of MoS2is studied, and the optimum temperature is 800 °C. The MoS2produced at 800 °C has the highest photocurrent density at -0.23 mA cm-2in 0.5 M Na2SO4and -0.51 mA cm-2in 0.5 M H2SO4at -0.8 V vs. Ag/AgCl. The linear sweep voltammetry shows that MoS2in 0.5 M H2SO4has about 55% higher photocurrent density than MoS2in Na2SO4due to the higher protons (H+) in the H2SO4electrolyte solution, which are sufficiently charged to reduce to H2and, therefore hydrogen evolves more rapidly where the photocurrent density and hydrogen generation can be enhanced. MoS2/graphene/SiO2/Si (MGS) has -0.07 mA cm-2at -0.8 V vs. Ag/AgCl of photocurrent density, which is 70% lower than that of bare MoS2because MGS is thicker compared with MoS2. Thus, MoS2has potential as a photocatalyst in photoelectrochemical water splitting. The structure and the morphology of MoS2play an important role in determining the photocurrent performance.
This article provides an overview of the structural and physicochemical properties of stable carbon-based nanomaterials and their applications as counter electrodes (CEs) in dye-sensitized solar cells (DSSCs). The research community has long sought to harvest highly efficient third-generation DSSCs by developing carbon-based CEs, which are among the most important components of DSSCs. Since the initial introduction of DSSCs, Pt-based electrodes have been commonly used as CEs owing to their high-electrocatalytic activities, thus, accelerating the redox couple at the electrode/electrolyte interface to complete the circuit. However, Pt-based electrodes have several limitations due to their cost, abundance, complicated facility, and low corrosion resistance in a liquid electrolyte, which further restricts the large-area applications of DSSCs. Although carbon-based nanostructures showed the best potential to replace Pt-CE of DSSC, several new properties and characteristics of carbon-CE have been reported for future enhancements in this field. In this review, we discuss the detailed synthesis, properties, and performances of various carbonaceous materials proposed for DSSC-CE. These nano-carbon materials include carbon nanoparticles, activated carbon, carbon nanofibers, carbon nanotube, two-dimensional graphene, and hybrid carbon material composites. Among the CE materials currently available, carbon-carbon hybridized electrodes show the best performance efficiency (up to 10.05%) with a high fill factor (83%). Indeed, up to 8.23% improvements in cell efficiency may be achieved by a carbon-metal hybrid material under sun condition. This review then provides guidance on how to choose appropriate carbon nanomaterials to improve the performance of CEs used in DSSCs.
We report a practical chemical vapor deposition (CVD) route to produce bilayer graphene on a polycrystalline Ni film from liquid benzene (C6H6) source at a temperature as low as 400 °C in a vertical cold-wall reaction chamber. The low activation energy of C6H6 and the low solubility of carbon in Ni at such a low temperature play a key role in enabling the growth of large-area bilayer graphene in a controlled manner by a Ni surface-mediated reaction. All experiments performed using this method are reproducible with growth capabilities up to an 8 in. wafer-scale substrate. Raman spectra analysis, high-resolution transmission electron microscopy, and selective area electron diffraction studies confirm the growth of Bernal-stacked bilayer graphene with good uniformity over large areas. Electrical characterization studies indicate that the bilayer graphene behaves much like a semiconductor with predominant p-type doping. These findings provide important insights into the wafer-scale fabrication of low-temperature CVD bilayer graphene for next-generation nanoelectronics.
We fabricated copper oxide nanowires (CuO NWs) ultraviolet (UV) light-assisted hydrogen gas sensor. The fabricated sensor shows promising sensor response behavior towards 100 ppm of H2 at room temperature and elevated temperature at 100 °C when exposed to UV light (3.0 mW/cm2). One hundred-cycle device stability test has been performed, and it is found that for sample elevated at 100 °C, the UV-activated sample achieved stability in the first cycle as compared to the sample without UV irradiation which needed about 10 cycles to achieve stability at the initial stage, whereas the sample tested at room temperature was able to stabilize with the aid of UV irradiation. This indicates that with the aid of UV light, after some "warming up" time, it is possible for the conventional CuO NW sensor which normally work at elevated temperature to function at room temperature because UV source is speculated to play a dominant role to increase the interaction of the surface of CuO NWs and hydrogen gas molecules absorbed after the light exposure.
A thin film of single-walled carbon nanotube (SWCNT) network field-effect transistor (FET) was fabricated by a simple, fast, and reliable deposition method for electronic applications. This study aims to develop a method for fabricating a thin film of random SWCNTs to be used as a transducer to detect human serum albumin (HSA) in biosensor applications. The random SWCNT network was deposited using the airbrush technique. The morphology of the CNT network was examined by utilising atomic force microscopy (AFM) and field-emission scanning electron microscopy (FESEM), while electrical characteristics were analysed using three-terminal IV measurements. The thin film (SWCNT network) was applied as a transducer to detect human serum albumin (HSA) based on its covalent interaction with antibodies. HSA plays a significant part in the physiological functions of the human body. The surface alteration of the SWCNTs was verified using Fourier transform infrared (FTIR) spectroscopy. Electrical current-voltage measurements validated the surface binding and HSA detection. The biosensor linearly recorded a 0.47 fg/mL limit of detection (LOD) and a high sensitivity of 3.44 μA (g/mL)-1 between 1 fg/mL and 10 pg/mL. This device can also be used to identify a genuine HSA despite interference from other biomolecules (i.e., bovine serum albumin (BSA)), thus demonstrating the random SWCNT-FET immunosensor ability to quantify HSA in a complex biological environment.
The miniaturization trend leads to the development of a graphene based nanoelectromechanical (NEM) switch to fulfill the high demand in low power device applications. In this article, we highlight the finite element (FEM) simulation of the graphene-based NEM switches of fixed-fixed ends design with beam structures which are perforated and intact. Pull-in and pull-out characteristics are analyzed by using the FEM approach provided by IntelliSuite software, version 8.8.5.1. The FEM results are consistent with the published experimental data. This analysis shows the possibility of achieving a low pull-in voltage that is below 2 V for a ratio below 15:0.03:0.7 value for the graphene beam length, thickness, and air gap thickness, respectively. The introduction of perforation in the graphene beam-based NEM switch further achieved the pull-in voltage as low as 1.5 V for a 250 nm hole length, 100 nm distance between each hole, and 12-number of hole column. Then, a von Mises stress analysis is conducted to investigate the mechanical stability of the intact and perforated graphene-based NEM switch. This analysis shows that a longer and thinner graphene beam reduced the von Mises stress. The introduction of perforation concept further reduced the von Mises stress at the graphene beam end and the beam center by approximately ~20⁻35% and ~10⁻20%, respectively. These theoretical results, performed by FEM simulation, are expected to expedite improvements in the working parameter and dimension for low voltage and better mechanical stability operation of graphene-based NEM switch device fabrication.
Thermoelectric generators (TEGs) are a form of energy harvester and eco-friendly power generation system that directly transform thermal energy into electrical energy. The thermoelectric (TE) method of energy harvesting takes advantage of the Seebeck effect, which offers a simple solution for fulfilling the power-supply demand in almost every electronics system. A high-temperature condition is commonly essential in the working mechanism of the TE device, which unfortunately limits the potential implementation of the device. This paper presents an in-depth analysis of TEGs at low operating temperature. The review starts with an extensive description of their fundamental working principles, structure, physical properties, and the figure of merit (ZT). An overview of the associated key challenges in optimising ZT value according to the physical properties is discussed, including the state of the art of the advanced approaches in ZT optimisation. Finally, this manuscript summarises the research status of Bi2Te3-based semiconductors and other compound materials as potential materials for TE generators working at low operating temperatures. The improved TE materials suggest that TE power-generation technology is essential for sustainable power generation at near-room temperature to satisfy the requirement for reliable energy supplies in low-power electrical/electronics systems.