Thin films of cerium oxide (CeO2) were prepared on silicon (Si) substrate by metal organic decomposition route. 0.25 M of cerium (III) acetylacetonate (acac) was used as starting materials with the addition of methanol and acetic acid as solvents. Oxide conversion of the film by thermal treatment was conducted at temperature ranging from 400 o C to 1000 o C for 15 min in argon ambient. X-ray diffraction (XRD) analysis utilizing Cukα radiation (Model Brukker’s Diffrac Plus ), Filmetrics system measurement, field emission scanning electron microscope (FE-SEM) (Model Zeiss Supra 35VP FE-SEM) and atomic force microscopy (AFM) (Model SII Nanonavi) were employed to characterize the phase formed and morphologies of the film produced.