A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV) are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device's good potential as a rectenna device with further improvement. The fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems.
We studied the clusters of GaAs by using the density functional theory simulation to optimize the structure. We determined the binding energy, bond lengths, Fermi energy and vibrational frequencies for all of the clusters. We use the Raman data of nanowires of GaAs to compare our calculated values with the experimental values of the vibrational frequencies. The nanowire of GaAs gives a Raman line at 256 cm-1 whereas in the bipyramidal Ga2As3 the calculated value is 256.33 cm-1. Similarly 285 cm-1 found in the experimental Raman data agrees with 286.21 cm-1 found in the values calculated for Ga2As2 (linear) showing that linear bonds occur in the nanowire. The GaAs is found in two structures zinc-blend as well as wurtzite structures. In the nanowire mixed structures as well as clusters are formed.
Long-wavelength vertical-cavity surface-emitting lasers (LW-VCSELs) have profound advantages compared to traditional edge-emitting lasers offering improved properties with respect to mode selectivity, fibre coupling, threshold currents and integration into 2D arrays or with other electronic devices. Its commercialization is gaining momentum as the local and access network in optical communication system expand. Numerical modeling of LW-VCSEL utilizing wafer-fused InP-based multi-quantum wells (MQW) and GaAs-based distributed Bragg reflectors (DBRs) is presented in this paper. Emphasis is on the device and mesa/pillar diameter design parameter comparison and its effect on the device characteristics.
We report the RF-to-DC characteristics of the integrated AlGaAs/GaAs Schottky diode and antenna under the direct injection and irradiation condition. The conversion efficiency up to 80% under direct injection of 1 GHz signal to the diode was achieved. It was found that the reduction of series resistance and parallel connection of diode and load tend to lead to the improvement of RF-to-DC conversion efficiency. Under direct irradiation from antenna-to-antenna method, the output voltage of 35 mV was still obtainable for the distance of 8 cm between both antennas in spite of large mismatch in the resonant frequency between the diode and the connected antenna. Higher output voltage in volt range is expected to be achievable for the well-matching condition. The proposed on-chip AlGaAs/GaAs HEMT Schottky diode and antenna seems to be a promising candidate to be used for application in proximity communication system as a wireless low power source as well as a highly sensitive RF detector.
Inclusive analysis on the optical characteristics of InGaAs/GaAs QW structure for 980 nm semiconductor laser operation is presented from experimental and theoretical point of view. The InGaAs/GaAs quantum well structure is grown by molecular beam epitaxy at different indium composition and quantum well thickness for optical characteristic comparison. Photoluminescence spectra from the measurement show that the spectrum is in good agreement with the simulation results. Detail simulation on the material gain for the InGaAs/GaAs quantum well as a function of carrier densities and operating temperature is also performed in order to optimize the semiconductor laser design for device fabrication.
In this research an atomic force microscopy (AFM) study on self-assembled In0.5Ga0.5As/GaAs quantum dots (QDs) was performed. Surface morphology of self-assembled In0.5Ga0.5As QDs changes with different growth time. Increasing growth time increased the dots size and decreased the dots density. In addiditon, self-assembled In0.5Ga0.5As QDs was grown on In0.1Ga0.9As underlying layer with different after-growth AsH3 flow time during cooling-down. The underlying layer caused lattice strain relaxation in the QDs on the surface. Increasing the period of AsH3 flow during cooling-down reduced the diameter of the dots and increased the density. The migration of groups III species in the growth of In0.5Ga0.5As/GaAs system was influenced by AsH3 flow during cooling-down period. This was due to the increase in surface population of active arsenic species. Underlying layer and the period of AsH3 flow during cooling-down are the two key factors in the fabrication of small and dense In0.5Ga0.5As QDs.
Quantum dots being an interesting class of nanostructures are considered potential prototype systems for novel nano-devices such as single electron transistor (sET). Here in this research, we present an analysis of the electron trajectory in the vicinity of gallium arsenide (GaAs) quantum dot. To perform this study, DFT based methodology is employed to optimize structure of quantum dot and determining the electrostatic potential around the dot. Under the influence of obtained electrostatic potential, trajectory of the moving electron towards the dot is investigated. The results showed that GaAs quantum dot have negative and positive potential surfaces that influence the electron interaction with the dot. These results motivate the development of SET electrode channel where the electron moves towards the dot on the surface with positive potential rather than negative potential surface.
This paper presents an ultra-wideband metamaterial absorber for solar harvesting in the infrared regime (220-360 THz) of the solar spectrum. The proposed absorber consists of square-shaped copper patches of different sizes imposed on a GaAs (Gallium arsenide) substrate. The design and simulation of the unit cell are performed with finite integration technique (FIT)-based simulation software. Scattering parameters are retrieved during the simulation process. The constructed design offers absorbance above 90% within a 37.89% relative bandwidth and 99.99% absorption over a vast portion of the investigated frequency range. An equivalent circuit model is presented to endorse the validity of the proposed structure. The calculated result strongly agrees with the simulated result. Symmetrical construction of the proposed unit cell reports an angular insensitivity up to a 35° oblique incidence. Post-processed simulation data confirm that the design is polarization-insensitive.
Arsenic is a toxic metalloid which is widely distributed in nature. It is normally present as arsenate under oxic conditions while arsenite is predominant under reducing condition. The major discharges of arsenic in the environment are mainly due to natural sources such as aquifers and anthropogenic sources. It is known that arsenite salts are more toxic than arsenate as it binds with vicinal thiols in pyruvate dehydrogenase while arsenate inhibits the oxidative phosphorylation process. The common mechanisms for arsenic detoxification are uptaken by phosphate transporters, aquaglyceroporins, and active extrusion system and reduced by arsenate reductases via dissimilatory reduction mechanism. Some species of autotrophic and heterotrophic microorganisms use arsenic oxyanions for their regeneration of energy. Certain species of microorganisms are able to use arsenate as their nutrient in respiratory process. Detoxification operons are a common form of arsenic resistance in microorganisms. Hence, the use of bioremediation could be an effective and economic way to reduce this pollutant from the environment.
The objective of this study was to investigate the cycling of arsenic in the water column of a post-mining lake. This study is part of a research project to develop health risk assessment for the surrounding population. Inductively Coupled Plasma-Mass Spectrophotometer (ICP-MS) and Capillary Electrophoresis (CE) have been used to analyze the total amount and speciation, respectively. A computer program, called MINTEOA2, which was developed by the United States Environmental Protection Agency (USEPA) was used for predicting arsenic, iron, and manganese as functions of pH and solubility. Studying the pH values and cycle of arsenic shows that the percentage of bound arsenate, As(V) species in the form of HAsO4- increases with range pH from 5 to 7, as well as Fe(II) and Mn(III). As expected phases of arsenic oxides are FeAsO4 and Mn3(AsO4), as a function of solubility, however none of these phases are over saturated and not precipitated. It means that the phases of arsenic oxides have a high solubility.
The field of arsenic pollution research has grown rapidly in recent years. Arsenic constitutes a broad range of elements from the Earth's crust and is released into the environment from both anthropogenic and natural sources due to its relative mobility under different redox conditions. The toxicity of arsenic is described in its inorganic form, as inorganic arsenic compounds can leach into different environments. Sampling was carried out in the Bestari Jaya catchment while using a land use map to locate the site, and experiments were conducted via sequential extraction and inductively coupled plasma optical emission spectroscopy to quantify proportions of arsenic in the sediment samples. The results show that metals in sediments of nonresidual fractions, which are more likely to be likely released into aquatic environments, are more plentiful than the residual sediment fractions. These findings support the mobility of heavy metals and especially arsenic through sediment layers, which can facilitate remediation in environments heavily polluted with heavy metals.
There are few small animals models for filariasis, even more so for onchocerciasis. Therefore it is difficult to test under drug screening conditions large numbers of potentially macrofilaricidal compounds. One way around this difficulty is to use mice infected with Trichinella spiralis which by reason of anatomical location in the host would show some correlation in antinematode activity between the test and target organisms. This study investigated the activity of 16 compounds against the immature larval stage of T. spiralis. All the nine benzimidazole compounds (albendazole, flubendazole, mebendazole, oxfendazole, oxibendazole 780118, 780120, 790163, and 790392) were active, the most potent being oxfendazole. The benzothiazoles (CGP21306, CGP20376, CGP21833 and CGP24588A) also indicated some anti-nematode activity together with 35vr, an imidazopyridine, but not as marked as the benzimidazole group. However, the organic arsenical compounds (Mel Ga and Mel Ni) showed little activity and this was at a rather highly toxic level. The prospects of using the Trichinella-mouse model as a primary screen to test for potential macrofilaricides are discussed.
Sewage sludge is an important class of bioresources whose energy content could be exploited using pyrolysis technology. However, some harmful trace elements in sewage sludge can escape easily to the gas phase during pyrolysis, increasing the potential of carcinogenic material emissions to the atmosphere. This study investigates emission characteristics of arsenic, cadmium and lead under different pyrolysis conditions for three different sewage sludge samples. The increased temperature (within 723-1123K) significantly promoted the cadmium and lead emissions, but its influence on arsenic emission was not pronounced. The releasing rate order of the three trace elements is volatile arsenic compounds>cadmium>lead in the beginning of pyrolysis. Fast heating rates promoted the emission of trace elements for the sludge containing the highest amount of ash, but exhibited an opposite effect for other studied samples. Overall, the high ash sludge released the least trace elements almost under all reaction conditions.
Tin slag was collected from a slag dump in the Penang Island and was analysed for its elemental composition using microfocus XRF with a 300ȝm x-ray spot diameter. The tin slag sample was analysed direct without any sample treatment and analysis was conduct on four different spots. The result gives different elemental composition on these different spots. Among the elements analysed are Al2O3, SiO2, SnO2, CaO, TiO2, Nd2O3, MnO, Fe2O3, TaO, W2O3, As2O3, ThO2, U3O8, ZrO2 and Nb2O5. Elemental mapping was also done to show the distribution of these elements in the sample.
Annealing temperature plays an important role in the formation of an Au-Ga eutectic alloy. The effects of the annealing temperature on gold nanoparticles colloid and substrate surface were studied using AFM, FE-SEM and TEM. At 600oC, the layer of gold colloids particle formed an island in the state of molten eutectic alloy and absorbed evaporated metalorganics to formed nanowire (NW) underneath the alloy. Pit formed on the substrate surface due to the chemical reactions during the annealing process have an impact on the direction of growth of the NW. Without annealing, the NW formed vertically on the GaAs (100) surface. The growth direction depends on the original nucleation facets and surface energy when annealed. When annealed, the wire base is large and curved due to the migration of Ga atoms on the substrate surface towards the tip of the wire and the line tension between the substrate surface and gold particle.
In this work, the structural properties of radio frequency sputtering-grown zinc oxide (ZnO) thin films on sapphire (Al203), gallium arsenide (GaAs) and n-type silicon (Si) substrates were characterized. Scanning electron microscopy was employed to study the surface morphology of the samples. X-ray diffraction (xRD) measurements were also performed to obtain the structural information of the samples. The xRD results showed that the ZnO layers grown on different substrates have similar lattice constant (c) values, which were used to calculate the strain percentages of the ZnO thin films. The surface morphologies of the ZnO thin films indicated the formation of a granular surface when ZnO is deposited on n-type Si(100) and Si( 111 ) substrates. Meanwhile, a leaf-like surface is obtained when ZnO is deposited on GaAs and Al203 substrates. The results showed that the ZnO thin film grown on n-type Si(100) has the best quality among all the samples.
An online preconcentration technique by dynamic pH junction was studied to improve the detection limit for anionic arsenic compounds by CE. The main target compound is roxarsone, or 3-nitro-4-hydroxyphenylarsonic acid, which is being used as an animal feed additive. The other inorganic and organoarsenic compounds studied are the possible biotransformation products of roxarsone. The arsenic species were separated by a dynamic pH junction in a fused-silica capillary using 15 mM phosphate buffer (pH 10.6) as the BGE and 15 mM acetic acid as the sample matrix. CE with UV detection was monitored at a wavelength of 192 nm. The influence of buffer pH and concentration on dynamic pH junction were investigated. The arsenic species focusing resulted in LOD improvement by a factor of 100-800. The combined use of C18 and anion exchange SPE and dynamic pH junction to CE analysis of chicken litter and soils helps to increase the detection sensitivity. Recoveries of spiked samples ranged between 70 and 72%.
Introduction: Over the decades, organic arsenic has been thought to be less toxic than inorganic arsenic.
Monosodium methylarsonate (MSMA) is a potent organoarsenical herbicide that is still being used in most
Asian countries. Reported studies on the effects of organic arsenic are mainly to the gastrointestinal system,
however there are limited research on its impacts to the liver. Therefore, this study aimed to investigate the
effect of MSMA exposure on hepatocytes and liver sinusoidal endothelial cells (LSEC). Materials and Methods:
Fourteen Sprague Dawley rats (n=14) were divided equally into arsenic-exposed (n=7) and control (n=7)
groups. The rats in arsenic-exposed group were given MSMA at 63.20 mg/kg daily for 6 months through oral
gavage. While the rats in control group were given distilled water ad libitum. At the end of the duration,
they were euthanized and underwent liver perfusion for tissue preservation. Liver tissues were harvested and
processed for light microscopy, scanning and transmission electron microscopy. The findings were analysed
descriptively. Results: MSMA had caused necrotic and apoptotic changes to the liver. Normal organelles
morphology were loss in the hepatocytes while LSEC revealed defenestration. Conclusion: In this study,
chronic low dose organic arsenic exposure showed evidence of toxicity to hepatocytes. Interestingly, LSEC
demonstrated capillarization changes.