Affiliations 

  • 1 Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
  • 2 Department of Physics, Graphene Research Institute and GRI-TPC International Research Center, Sejong University, Seoul, Republic of Korea
  • 3 Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, USA
  • 4 Department of Materials Science and Engineering, The Ohio State University, Columbus, OH, USA
  • 5 Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA
  • 6 School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Republic of Korea
  • 7 School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul, Republic of Korea
  • 8 Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA
  • 9 Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
  • 10 Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
  • 11 Institute of Power Engineering, Universiti Tenaga Nasional, Kajang, Malaysia
  • 12 HMC, Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, Republic of Korea
  • 13 Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA
  • 14 Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA. shiy2@rpi.edu
  • 15 Department of Physics, Graphene Research Institute and GRI-TPC International Research Center, Sejong University, Seoul, Republic of Korea. hong@sejong.ac.kr
  • 16 Department of Materials Science and Engineering, Westlake University, Hangzhou, Zhejiang, China. kongwei@westlake.edu.cn
  • 17 Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA. jeehwan@mit.edu
Nat Nanotechnol, 2023 May;18(5):464-470.
PMID: 36941360 DOI: 10.1038/s41565-023-01340-3

Abstract

Layer transfer techniques have been extensively explored for semiconductor device fabrication as a path to reduce costs and to form heterogeneously integrated devices. These techniques entail isolating epitaxial layers from an expensive donor wafer to form freestanding membranes. However, current layer transfer processes are still low-throughput and too expensive to be commercially suitable. Here we report a high-throughput layer transfer technique that can produce multiple compound semiconductor membranes from a single wafer. We directly grow two-dimensional (2D) materials on III-N and III-V substrates using epitaxy tools, which enables a scheme comprised of multiple alternating layers of 2D materials and epilayers that can be formed by a single growth run. Each epilayer in the multistack structure is then harvested by layer-by-layer mechanical exfoliation, producing multiple freestanding membranes from a single wafer without involving time-consuming processes such as sacrificial layer etching or wafer polishing. Moreover, atomic-precision exfoliation at the 2D interface allows for the recycling of the wafers for subsequent membrane production, with the potential for greatly reducing the manufacturing cost.

* Title and MeSH Headings from MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine.