Low-temperature growth of indium tin oxide (ITO) nanowires (NWs) was obtained on catalyst-free amorphous glass substrates at 250 °C by Nd:YAG pulsed-laser deposition. These ITO NWs have branching morphology as grown in Ar ambient. As suggested by scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM), our ITO NWs have the tendency to grow vertically outward from the substrate surface, with the (400) plane parallel to the longitudinal axis of the nanowires. These NWs are low in electrical resistivity (1.6×10⁻⁴ Ω cm) and high in visible transmittance (~90–96%), and were tested as the electrode for organic light emitting devices (OLEDs). An enhanced current density of ~30 mA cm⁻² was detected at bias voltages of ~19–21 V with uniform and bright emission. We found that the Hall mobility of these NWs is 2.2–2.7 times higher than that of ITO film, which can be explained by the reduction of Coulomb scattering loss. These results suggested that ITO nanowires are promising for applications in optoelectronic devices including OLED, touch screen displays, and photovoltaic solar cells.
A "Janus particle" refers to the production of two materials in a single system and shows a difference in physical characteristics, and two surfaces participate in the formation with different chemistries. This research generated the Janus using a hybrid of zinc oxide (ZnO) and gold (Au) on the sensor surface toward making high-performance DNA sensors. The Janus ZnO/Au-textured film was synthesized via the one-step sol-gel method, which involves a suitable ratio of a mixture of ZnO sol seed solution. The synthesized Janus ZnO/Au-textured film undergoes a low-temperature aqueous hydrothermal route to synthesize quasi-one-dimensional nanowires. The average grain size in the Janus ZnO/Au nanotextured wire was 41.60 nm. The fabricated nanotextured wire was further optimized by tuning the thickness and characterized by XRD and high-resolution microscopy. Electrical characterization was conducted on the Janus ZnO/Au nanotextured wire coupled with an interdigitated electrode sensor to detect the specific leptospirosis DNA strand. The generated device is capable of detecting lower DNA concentration at 1 × 10-13 M with a sensitivity of 8.54 MΩ M-1 cm-2 . The high performance is attained on linear concentrations of 10-6 -10-13 M with the determination coefficient, "I = 135437.63C-3609.07" R2 = 0.9551. A potential strategy is proposed as a base for developing different high-performance sensors.
We studied the clusters of GaAs by using the density functional theory simulation to optimize the structure. We determined the binding energy, bond lengths, Fermi energy and vibrational frequencies for all of the clusters. We use the Raman data of nanowires of GaAs to compare our calculated values with the experimental values of the vibrational frequencies. The nanowire of GaAs gives a Raman line at 256 cm-1 whereas in the bipyramidal Ga2As3 the calculated value is 256.33 cm-1. Similarly 285 cm-1 found in the experimental Raman data agrees with 286.21 cm-1 found in the values calculated for Ga2As2 (linear) showing that linear bonds occur in the nanowire. The GaAs is found in two structures zinc-blend as well as wurtzite structures. In the nanowire mixed structures as well as clusters are formed.
A graphene-based three-branch nanojunction (TBJ) device having nanowire width of 200 nm was successfully fabricated. The layer number of graphene prepared by mechanical exfoliation was determined using a simple optical contrast method which showed good agreement with theoretical value. n-type doping by Polyethylene imines (PEI) was done to control the position of Dirac point. Baking and PEI doping was found to decrease contact resistance and increase the carrier mobility. The chemically-doped TBJ graphene showed carrier mobility of 20000 cm2/Vs, which gave related mean free path of 175 nm.
This work demonstrated a growth of well-aligned NiSi/SiC core-shell nanowires by a one-step process of hot-wire chemical vapor deposition on Ni-coated crystal silicon substrates at different thicknesses. The NiSi nanoparticles (60 to 207 nm) acted as nano-templates to initially inducing the growth of these core-shell nanowires. These core-shell nanowires were structured by single crystalline NiSi and amorphous SiC as the cores and shells of the nanowires, respectively. It is proposed that the precipitation of the NiSi/SiC are followed according to the nucleation limited silicide reaction and the surface-migration respectively for these core-shell nanowires. The electrical performance of the grown NiSi/SiC core-shell nanowires was characterized by the conducting AFM and it is found that the measured conductivities of the nanowires were higher than the reported works that might be enhanced by SiC shell layer on NiSi nanowires. The high conductivity of NiSi/SiC core-shell nanowires could potentially improve the electrical performance of the nanowires-based devices for harsh environment applications such as field effect transistors, field emitters, space sensors, and electrochemical devices.
A compact UHF antenna has been presented in this paper for nanosatellite space mission. A square ground plane with slotted rectangular radiating element have been used. Coaxial probe feeding is used to excite. The rectangular slot of the radiating patch is responsible for resonating at lower UHF bands. One of the square faces of the nanosatellite structure works as the ground plane for the slotted radiating element. The fabricated prototype of the proposed antenna has achieved an impedance bandwidth (S11< -10dB) of 7.0 MHz (398 MHz- 405 MHz) with small size of 97 mm× 90 mm radiating element. The overall ground plane size is 100 mm × 100 mm × 0.5 mm. The proposed antenna has achieved a gain of 1.18 dB with total efficiency of 62.5%. The proposed antenna addresses two design challenges of nanosatellite antenna, (a) assurance of the placement of solar panel beneath the radiating element; (b) providing about 50% open space for solar irradiance to pass onto the solar panel, enabling the solar panel to achieve up to 93.95% of power under of normal conditions.
We report on a process for fabricating self-aligned tungsten (W) nanowires with polycrystalline silicon core. Tungsten nanowires as thin as 10 nm were formed by utilizing polysilicon sidewall transfer technology followed by selective deposition of tungsten by chemical vapor deposition (CVD) using WF6 as the precursor. With selective CVD, the process is self-limiting whereby the tungsten formation is confined to the polysilicon regions; hence, the nanowires are formed without the need for lithography or for additional processing. The fabricated tungsten nanowires were observed to be perfectly aligned, showing 100% selectivity to polysilicon and can be made to be electrically isolated from one another. The electrical conductivity of the nanowires was characterized to determine the effect of its physical dimensions. The conductivity for the tungsten nanowires were found to be 40% higher when compared to doped polysilicon nanowires of similar dimensions.
Field-effect transistors (FETs) have succeeded in modern electronics in an era of computers and hand-held applications. Currently, considerable attention has been paid to direct electrical measurements, which work by monitoring changes in intrinsic electrical properties. Further, FET-based sensing systems drastically reduce cost, are compatible with CMOS technology, and ease down-stream applications. Current technologies for sensing applications rely on time-consuming strategies and processes and can only be performed under recommended conditions. To overcome these obstacles, an overview is presented here in which we specifically focus on high-performance FET-based sensor integration with nano-sized materials, which requires understanding the interaction of surface materials with the surrounding environment. Therefore, we present strategies, material depositions, device structures and other characteristics involved in FET-based devices. Special attention was given to silicon and polyaniline nanowires and graphene, which have attracted much interest due to their remarkable properties in sensing applications.
The recent interest to nanotechnology aims not only at device miniaturisation, but also at understanding the effects of quantised structure in materials of reduced dimensions, which exhibit different properties from their bulk counterparts. In particular, quantised metal nanowires made of silver, gold or copper have attracted much attention owing to their unique intrinsic and extrinsic length-dependent mechanical properties. Here we review the current state of art and developments in these nanowires from synthesis to mechanical properties, which make them leading contenders for next-generation nanoelectromechanical systems. We also present theories of interatomic interaction in metallic nanowires, as well as challenges in their synthesis and simulation.
A simple spin-coating process for fabricating vertical organic light-emitting transistors (VOLETs) is realized by utilizing silver nanowire (AgNW) as a source electrode. The optical, electrical and morphological properties of the AgNW formation was initially optimized, prior VOFET fabrication. A high molecular weight of poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] MEH-PPV was used as an organic semiconductor layer in the VOFET in forming a multilayer structure by solution process. It was found that current density and luminance intensity of the VOLET can be modulated by a small magnitude of gate voltage. The modulation process was induced by changing an injection barrier via gate voltage bias. A space-charge-limited current (SCLC) approach in determining transistor mobility has been introduced. This preliminary and fundamental work is beneficial towards all-solution processing display devices.
Novel decoration of high aspect ratio zinc oxide nanowires (ZnO NWs) with noble metals such as Ag and Au nanoparticles (NPs) was demonstrated in this work. A facile method of chemical deposition with good controllability, as well as good homogeneity would be a huge advantage towards large scale fabrication. The highlight of this work is the feasibility of multiple component decoration such as a hybrid (co-exist) Ag-Au NPs decorated ZnO NWs formation that could be beneficial towards the development of nanoarchitectured materials with the most desired properties. The local surface plasmon effect (LSPR) of Ag and Au NPs were confirmed using extinction spectra and significant photoelectrochemical conversion efficiency (PCE) enhancement of dye-sensitized solar cells (DSSCs) was achieved. The Ag-NPs and hybrid Ag-Au NPs decorated ZnO NWs marked an impressive 125 and 240% efficiency improvement against pure ZnO NWs. The improved dye light extinction resulted from the LSPR effect that had enabled greater electron generation leading to improved PCE. As the complex design of oxides' nanoarchitectures have reached a point of saturation, this novel method would enable further enhancement in their photoelectrochemical properties through decoration with noble metals via a simple chemical deposition route.
This paper presents the temperature characteristics of silicon nanowire transistors (SiNWTs) and examines the effect of temperature on transfer characteristics, threshold voltage, I(ON)/I(OFF) ratio, drain-induced barrier lowering (DIBL), and sub-threshold swing (SS). The (MuGFET) simulation tool was used to investigate the temperature characteristics of a transistor. The findings reveal the negative effect of higher working temperature on the use of SiNWTs in electronic circuits, such as digital circuits and amplifiers circuits, because of the lower I(ON)/I(OFF) ratio, higher DIBL, and higher SS at higher temperature. Moreover, the ON state is the optimum condition for using a transistor as a temperature nano-sensor.
This paper shows the effect of the dimensions of nanowires on threshold voltage, ON/OFF current ratio, and sub-threshold slope. These parameters are critical factors of the characteristics of silicon nanowire transistors. The MuGFET simulation tool was used to investigate the characteristics of a transistor. Current-voltage characteristics with different dimensions were simulated. Results show that long nanowires with low diameter and oxide thickness tend to have the best transistor characteristics.
In this data article, we provide energy dispersive X-ray spectroscopy (EDX) spectra of the electrospun composite (SnO2-TiO2) nanowires with the elemental values measured in atomic and weight%. The linear sweep voltammetry data of composite and its component nanofibers are provided. The data collected in this article is directly related to our research article "Synergistic combination of electronic and electrical properties of SnO2 and TiO2 in a single SnO2-TiO2 composite nanowire for dye-sensitized solar cells" [1].
A ZnO gas sensor was successfully prepared by RF sputtering. The maximum sensitivity of the sensor for vinegar test application was at 400oC. The ZnO based sensor showed good sensitivity for vinegar test in the concentration range of 4% to 9%. The work reveals the ability of using ZnO gas sensor to determine the acid concentrations of the vinegars for food requirements.
The study demonstrates the development of a liquid-based gate-control silicon nanowire biosensor for detection of specific single-stranded DNA (ssDNA) molecules. The sensor was fabricated using conventional photolithography coupled with an inductively coupled plasma dry etching process. Prior to the application of DNA to the device, its linear response to pH was confirmed by serial dilution from pH 2 to pH 14. Then, the sensor surface was silanized and directly aminated with (3-aminopropyl) triethoxysilane to create a molecular binding chemistry for biofunctionalization. The resulting Si‒O‒Si‒ components were functionalized with receptor ssDNA, which interacted with the targeted ssDNA to create a field across the silicon nanowire and increase the current. The sensor shows selectivity for the target ssDNA in a linear range from target ssDNA concentrations of 100 pM to 25 nM. With its excellent detection capabilities, this sensor platform is promising for detection of specific biomarkers and other targeted proteins.
The junctionless nanowire transistor is a promising alternative for a new generation of nanotransistors. In this letter the atomic force microscopy nanolithography with two wet etching processes was implemented to fabricate simple structures as double gate and single gate junctionless silicon nanowire transistor on low doped p-type silicon-on-insulator wafer. The etching process was developed and optimized in the present work compared to our previous works. The output, transfer characteristics and drain conductance of both structures were compared. The trend for both devices found to be the same but differences in subthreshold swing, 'on/off' ratio, and threshold voltage were observed. The devices are 'on' state when performing as the pinch off devices. The positive gate voltage shows pinch off effect, while the negative gate voltage was unable to make a significant effect on drain current. The charge transmission in devices is also investigated in simple model according to a junctionless transistor principal.
This study explores optimization of resistance load (R-Load) of four silicon nanowire transistor (SiNWT)-based static random-access memory (SRAM) cell. Noise margins and inflection voltage of butterfly characteristics with static power consumption of SRAM cell are used as limiting factors in this optimization. Range of R-Load used in this study was 20-1000 KΩ with Vdd = 1 V. Results indicate that optimization depends critically on resistance load value. The optimized range of R-Load is 100-200 KΩ.
Co-synthesis of In2O3 and ZnO nanowires (NWs) were grown on silicon and alumina substrates using vapour transport deposition method. Their morphological structures showed that the NWs were rather aligned on silicon substrate and randomly oriented on alumina substrate. The formation of NWs on silicon substrate was found to be dominated by the growth of ZnO NWs while that on alumina substrate was dominated by the growth of In2O3 NWs. The In2O3 and ZnO NWs were highly crystalline and have wurtzite structure.
: Hydrogen (H2) is a clean energy carrier which can help to solve environmental issues with the depletion of fossil fuels. Sodium borohydride (NaBH4) is a promising candidate material for solid state hydrogen storage due to its huge hydrogen storage capacity and nontoxicity. However, the hydrolysis of NaBH4 usually requires expensive noble metal catalysts for a high H2 generation rate (HGR). Here, we synthesized high-aspect ratio copper nanowires (CuNWs) using a hydrothermal method and used them as the catalyst for the hydrolysis of NaBH4 to produce H2. The catalytic H2 generation demonstrated that 0.1 ng of CuNWs could achieve the highest volume of H2 gas in 240 min. The as-prepared CuNWs exhibited remarkable catalytic performance: the HGR of this study (2.7 × 1010 mL min-1 g-1) is ~3.27 × 107 times higher than a previous study on a Cu-based catalyst. Furthermore, a low activation energy (Ea) of 42.48 kJ mol-1 was calculated. Next, the retreated CuNWs showed an outstanding and stable performance for five consecutive cycles. Moreover, consistent catalytic activity was observed when the same CuNWs strip was used for four consecutive weeks. Based on the results obtained, we have shown that CuNWs can be a plausible candidate for the replacement of a costly catalyst for H2 generation.